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Memory bank and its reference voltage generation circuit

A reference voltage and circuit generation technology, applied in static memory, instruments, etc., can solve the problems of increasing the design cost of electronic products, distortion of electrical signals, and affecting the stability of reference voltage of data lines, etc.

Inactive Publication Date: 2013-08-14
HONG FU JIN PRECISION IND (SHENZHEN) CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the existing design, the reference voltage of the data line and the reference voltage of the address line are both generated on the motherboard of the electronic product and transmitted to the memory stick through the transmission line. Due to the long transmission distance, it is easy to cause electrical signal distortion and affect The reference voltage of the data line and the reference voltage of the address line are stable
On the other hand, in order to reduce the interference of surrounding electronic components, the above two reference voltages are generally output directly by integrated circuits (Integrated Circuit, IC), but this increases the design cost of electronic products

Method used

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  • Memory bank and its reference voltage generation circuit

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Embodiment Construction

[0012] see figure 1 , a preferred embodiment of the present invention provides a reference voltage generating circuit 100, which can be applied to electronic devices such as personal computers, servers, and data control centers. The reference voltage generation circuit 100 is disposed on the memory stick 200 of the electronic device, and is used for providing the reference voltage for the memory stick 200 .

[0013] The memory stick 200 is provided with a data line pin DQ and an address line pin CA, and the data line pin DQ and the address line pin CA are respectively used for transmitting data and address signals.

[0014] The reference voltage generation circuit 100 includes a first reference voltage generation circuit 10 and a second reference voltage generation circuit 30 .

[0015] The first reference voltage generation circuit 10 is used to provide a reference voltage for the data line pin DQ of the memory bank 200 . The first reference voltage generating circuit 10 in...

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Abstract

The invention provides a reference voltage generation circuit which is used for providing reference voltage for a memory bank. The memory bank comprises a data line pin and an address line pin. The reference voltage generation circuit comprises a first reference voltage generation circuit and a second reference voltage generation circuit. The first reference voltage generation circuit and the second reference voltage generation circuit are both directly electrically connected with the data line pin and the address line pin respectively so as to respectively provide reference voltage for the data line pin and the address line pin. The invention also provides the memory bank with the application of the reference voltage generation circuit. Reference voltage generated by the reference voltage generation circuit is stable and is convenient to maintain normal operation of the memory bank.

Description

technical field [0001] The invention relates to a reference voltage generation circuit, in particular to a reference voltage generation circuit applied to memory sticks. Background technique [0002] With the powerful functions of electronic products such as personal computers and servers, the capacity, computing speed and power consumption of memory sticks have been greatly improved. In actual use, the reference voltage (VREFDQ) of the data line on the memory stick and the reference voltage (VREFCA) of the address line must be kept stable to ensure the normal operation of the memory stick. However, in the existing design, the reference voltage of the data line and the reference voltage of the address line are both generated on the motherboard of the electronic product and transmitted to the memory stick through the transmission line. Due to the long transmission distance, it is easy to cause electrical signal distortion and affect The reference voltage of the data line and...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C5/14
CPCG11C5/147
Inventor 田波吴亢
Owner HONG FU JIN PRECISION IND (SHENZHEN) CO LTD
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