Reference voltage generating circuit and semiconductor memory applying same

A technology of reference voltage and generating circuit, applied in static memory, instrument, etc., to achieve the effect of stabilizing reference voltage and shortening response time

Active Publication Date: 2018-01-19
CHANGXIN MEMORY TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present invention provides a reference voltage generating circuit and a semiconductor memory using it, so as to solve or alleviate one or more technical problems in the prior art

Method used

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  • Reference voltage generating circuit and semiconductor memory applying same
  • Reference voltage generating circuit and semiconductor memory applying same
  • Reference voltage generating circuit and semiconductor memory applying same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0056] Such as figure 2 and image 3 Shown is the reference voltage generation circuit 100 of this embodiment, including a first voltage divider circuit 110 for generating a reference voltage Vref, and the working modes of the first voltage divider circuit 110 include a first working mode and a second working mode.

[0057] Such as figure 2 As shown, in the first working mode, the first voltage divider circuit 110 includes a first resistor R111 and a second resistor R112 connected in series, the first resistor R111 is connected to the power supply voltage VDDQ, the second resistor R112 is grounded to VSSQ, and the reference voltage Vref It is generated at the junction A between the first resistor R111 and the second resistor R112.

[0058] Such as image 3 As shown, in the second working mode, the first voltage divider circuit 110 includes a first resistor R111 and a second resistor R112 connected in series, the first resistor R111 is connected to the power supply voltage...

Embodiment 2

[0087] Such as Figure 5 As shown, the reference voltage generation circuit 200 of this embodiment includes a first voltage divider circuit 210 and a noise detection circuit 120 .

[0088] The first voltage divider circuit 210 includes a switch unit 215, and the switch unit 215 is connected between the connection A and the connection D, wherein the connection A is the connection between the first resistor R111 and the second resistor R112, and the connection D is the connection between the third resistor R113 and the fourth resistor R114.

[0089] The switch unit 215 receives the detection result output by the noise detection circuit 120 . When the detection result output by the noise detection circuit 120 is that the change of the reference voltage Vref does not exceed the preset value, the switch unit 215 is turned off, and the first voltage dividing circuit 310 enters the first working mode, which is in a low-noise state and can generate a stable reference voltage. Voltag...

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PUM

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Abstract

The invention provides a reference voltage generating circuit and a semiconductor memory applying the reference voltage generating circuit. The reference voltage generating circuit comprises a first voltage division circuit used for producing a reference voltage and a noise detection circuit, wherein the first voltage division circuit comprises a first working mode and a second working mode; in the first working mode, the first voltage division circuit comprises a first resistor and a second resistor which are connected in series, and the reference voltage is produced at a joint between the first resistor and the second resistor; and in the second working mode, the first voltage division circuit also comprises a third resistor and a fourth resistor, the third resistor is connected with thefirst resistor in parallel, and the fourth resistor is connected with the second resistor in parallel. By virtue of the technical scheme of the invention, response time of the reference voltage can be shortened, and a stable reference voltage is provided for a circuit.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a reference voltage generating circuit and a semiconductor memory using the same. Background technique [0002] The reference voltage (Voltage reference, referred to as Vref) refers to a voltage in the circuit that can be kept constant regardless of load, power supply, temperature drift, time, etc. Reference voltages can be used in voltage regulators in power supply systems, analog-to-digital converters and digital-to-analog converters, and many other measurement and control systems. [0003] Such as figure 1 Shown is a reference voltage generating circuit commonly used in the prior art, including a voltage divider circuit 110', the voltage divider circuit 110' includes a resistor R111' and a resistor R112' connected in series, the resistor R111' is connected to the power supply voltage VDDQ', and the resistor R112 'Ground VSSQ', the voltage generated at the junction A' ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C5/14
Inventor 赖荣钦
Owner CHANGXIN MEMORY TECH INC
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