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The application discloses a kind of potato green efficient fertilization methods, belong to agricultural planting technical field.The method includes: in sowing or land preparation, straw is promoted to rot microbial agent and antagonistic functional bacterium agent are mixed together with base fertilizer and are applied together;Before potato flowering period, antagonistic functional bacterium agent is mixed together with topdressing and is applied together.The straw is promoted to rot microbial agent and includes trichoderma and bacillus, and the antagonistic functional bacterium agent includes trichoderma, paenibacillus and streptomycete.The application can effectively improve potato yield and fertilizer utilization rate by the synergistic application of functional microorganism and fertilizer, while significantly reducing carbon footprint and nitrogen footprint in production process, solve the problem that high yield and environmental protection are difficult to consider in prior art, provide a popularized technical scheme for potato green efficient production.

This invention provides an acidic chemical mechanical polishing slurry for gallium arsenide substrates and its application, belonging to the field of chemical mechanical polishing technology. The polishing slurry comprises, by weight percentage, 0.5–5 wt% modified cerium oxide abrasive, 0.1–3 wt% peracetic acid, 0.05–2 wt% urea peroxide, and the balance deionized water, with a pH value of 3.0–5.0; wherein the modified cerium oxide abrasive is nano-cerium oxide particles with surface-grafted organic acid functional groups, with an average particle size of 20–80 nm. The acidic chemical mechanical polishing slurry for fine polishing of gallium arsenide substrates provided by this invention, by employing a dual oxidant system composed of peracetic acid and urea peroxide, combined with modified cerium oxide abrasive with surface-grafted organic acid functional groups, balances surface reaction stability, abrasive dispersibility, and low-load mechanical removal requirements under acidic conditions, thereby helping to reduce surface scratches, particle residue, and subsurface damage depth, and improving the surface integrity of gallium arsenide substrates after fine polishing.