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Coating liquid for forming bi-based dielectric thin film with paraelectric and bi-based dielectric thin film

A technology of dielectric film and coating liquid, which is applied in the direction of devices, coatings, circuits, etc. for coating liquid on the surface

Inactive Publication Date: 2006-09-13
TOKYO OHKA KOGYO CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0021] In addition, JP10-258252A and JP10-259007A describe attempts to stabilize the metal composition ratio by compounding metal alkoxides and to suppress changes in the metal composition ratio in thin films. However, the materials specifically described in the above documents are only It relates to the coating liquid for forming SBT type ferroelectric thin film, but there is no record concerning the coating liquid for forming BIT type and BLT type ferroelectric thin film and the coating liquid for forming permanent dielectric thin film

Method used

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  • Coating liquid for forming bi-based dielectric thin film with paraelectric and bi-based dielectric thin film
  • Coating liquid for forming bi-based dielectric thin film with paraelectric and bi-based dielectric thin film
  • Coating liquid for forming bi-based dielectric thin film with paraelectric and bi-based dielectric thin film

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Embodiment

[0143] The present invention will be described in further detail below using examples, but the present invention is not limited to these examples.

[0144] [Coating solution for forming Bi-based ferroelectric thin film]

Synthetic example 1

[0146] [In the above general formula (I), n=1.0250, x=0.7317, y=0, Z=1, α=0.1500 coating solution (Bi:(Ti+A)=1.12:1 (molar ratio)) 〕

[0147] 0.0750 mol of lanthanum acetate and 0.3000 mol of titanium tetrabutoxide were added to 1-methoxy-2-propanol, these were placed in an eggplant-shaped flask, and heated and stirred at 80°C. Add 0.3350 moles of bismuth tributoxide to it, and then heat and stir at 60° C. to synthesize Bi-Ti-La metal complex metal alkoxide (BLT complex liquid).

[0148] Add 0.3000 moles of 2-ethylhexanoic acid as a stabilizer to the above-mentioned BLT complex solution and stir at room temperature, further add 0.2000 moles of triethanolamine as a stabilizer, then heat and concentrate at 60°C, and 1-methoxy -2-propanol was substituted with 1,2-dimethoxy-propane to prepare a coating solution for forming a lanthanum bismuth titanate (BLT type) thin film.

Synthetic example 2

[0150] [In the above general formula (I), n=1.0250, x=0.7317, y=0, Z=1, α=0.1500 coating solution (Bi:(Ti+A)=1.12:1 (molar ratio)) 〕

[0151] 0.0750 mol of lanthanum acetate and 0.3000 mol of titanium tetrabutoxide were added to 1-methoxy-2-propanol, and these were placed in an eggplant-shaped flask and heated and stirred at 80°C. Add 0.3350 moles of bismuth tributoxide to it, and then heat and stir at 60° C. to synthesize Bi-Ti-La metal complex metal alkoxide (BLT complex liquid).

[0152] After adding 0.3000 mol of ethyl acetoacetate as a stabilizer to the above-mentioned BLT complex liquid and heating and stirring, 0.2000 mol of water was added and stirred at room temperature. Further, 0.1000 mol of propylene glycol additive was added thereto as a stabilizer, and stirred at room temperature to prepare a coating solution for forming a lanthanum bismuth titanate (BLT type) thin film.

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Abstract

This coating liquid for forming a Bi-based dielectric thin film showing paraelectric or ferroelectric property contains a composite metal oxide expressed by the formula: {Bi<4-x>, (La, B<1-z>)}(Ti<3-y>, A)O<12+alpha>(wherein A is a metal element such as Ge; B is a rare earth element except lanthanum or a metal element such as Ca or Sr; 0<=x<4, 0<=y<=0.3, 0 C01G 29 / 00 C01G 23 / 00 C01G 1 / 02 B05D 5 / 12 H01B 3 / 12 C04B 35 / 46 H01L 21 / 31 H01L 27 / 108 H01L 27 / 11 17 29 3 2005 / 3 / 11 1830811 2006 / 9 / 13 000000000 Tokyo Ohka Kogyo Co., Ltd. Japan Sato Yoshimi Takeuchi Yoshiyuki yang hongjun 11256 Japan 2004 / 3 / 11 069837 / 2004

Description

technical field [0001] The present invention relates to a coating solution for forming a paraelectric or ferroelectric Bi-based dielectric thin film and a Bi-based dielectric thin film formed using the coating solution. The coating solution of the present invention can exert the properties of a paradielectric forming material and a ferroelectric forming material, and is widely applicable to fields utilizing pyroelectricity, high dielectricity, and ferroelectricity. In particular, it can be widely used in individual capacitors (film capacitors), DRAM and non-volatile memory capacitors, etc., according to the characteristics required for semiconductor devices. Background technique [0002] With the increasing demand for the memory capacity of semiconductor memory, research has begun on the use of high permittivity (high dielectric) paraelectric or ferroelectric dielectric films as charge storage in DRAM (Dynamic Random Access Memory) Use capacitors. In addition, since the no...

Claims

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Application Information

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IPC IPC(8): C01G29/00C01G23/00C01G1/02B05D5/12H01B3/12C04B35/46H01L21/31H01L27/108H01L27/11H01L21/8242H01L21/8246H01L27/105
CPCH04M1/23
Inventor 佐藤善美竹内义行
Owner TOKYO OHKA KOGYO CO LTD
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