Transparent conducting thin film and preparation method thereof

A technology of transparent conductive film and transparent substrate, applied in the field of electronics, can solve the problems of low square resistance, graphene film cannot have high visible light transmittance at the same time, etc., achieve low square resistance, high visible light transmittance, reduce cost effect

Inactive Publication Date: 2013-02-20
SHANGHAI JIAO TONG UNIV
View PDF8 Cites 43 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to solve the problem that the graphene film cannot have high visible light transmittance and low square resistance at the same time, and pr

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Transparent conducting thin film and preparation method thereof
  • Transparent conducting thin film and preparation method thereof
  • Transparent conducting thin film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0044] Example 1

[0045] The preparation of the transparent conductive film 2 is completed through the following specific steps:

[0046] 1) Clean the transparent substrate 1 of the glass, and dry it with dry nitrogen after cleaning;

[0047] 2) The silver nanowire layer 21 is formed on the transparent substrate 1 by a drop coating method, the diameter of the silver nanowire is 40 nm, the length is 100 μm, and the density on the transparent substrate 1 is 0.005 mg / cm 2 ;

[0048] 3) The graphene sheet is formed by chemical vapor deposition (CVD), and the graphene sheet is a single-layer graphene;

[0049] 4) The graphene sheet is transferred to the silver nanowire layer 21 by a dry method to form the graphene sheet layer 22, thereby preparing a composite layer of the graphene sheet layer 22 and the silver nanowire layer 21 on the transparent substrate 1 The transparent conductive film 2.

Example Embodiment

[0050] Example 2

[0051] The preparation of the transparent conductive film 2 is completed through the following specific steps:

[0052] 1) Clean the flexible transparent substrate 1 made of polyethylene terephthalate (PET), and dry it with dry nitrogen after cleaning;

[0053] 2) A silver nanowire layer 21 is formed on the transparent substrate 1 by a blade coating method, the diameter of the silver nanowire is 60 nm, the length is 200 μm, and the density on the transparent substrate 1 is 0.0015 mg / cm 2 ;

[0054] 3) Graphene sheets are formed from graphene oxide after reduction, and the graphene sheets are double-layer graphene;

[0055] 4) The graphene sheet layer 22 is formed on the silver nanowire layer 21 by a spin coating method, thereby preparing a transparent conductive film composed of a combined layer of the graphene sheet layer 22 and the silver nanowire layer 21 on the transparent substrate 1 2.

Example Embodiment

[0056] Example 3

[0057] The preparation of the transparent conductive film 2 is completed through the following specific steps:

[0058] 1) Clean the flexible transparent substrate 1 of polyethylene naphthalate (PEN), and dry it with dry nitrogen after cleaning;

[0059] 2) Using chemical vapor deposition (CVD) to form graphene sheets, which are double-layer graphene;

[0060] 3) Using a wet method to transfer the graphene sheet to the transparent substrate 1 to form the graphene sheet layer 22;

[0061] 4) The silver nanowire layer 21 is formed on the graphene sheet layer 22 by spraying, the diameter of the silver nanowire is 60nm, the length is 80μm, and the density on the transparent substrate 1 is 0.005mg / cm 2 Thus, a transparent conductive film 2 composed of a combined layer of the graphene sheet layer 22 and the silver nanowire layer 21 is prepared on the transparent substrate 1.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Diameteraaaaaaaaaa
Lengthaaaaaaaaaa
Diameteraaaaaaaaaa
Login to view more

Abstract

The invention discloses a transparent conducting thin film and a preparation method thereof. The transparent conducting thin film is located on a transparent substrate and comprises a graphene sheet and a silver nanowire, the transparent conducting thin film is a combined layer formed by a graphene sheet layer and a silver nanowire layer, or the transparent conducting thin film is formed by blending the graphene sheet and the silver nanowire. The transparent conducting thin film and the preparation method thereof have the advantages that the visible light transmittance is high, the square resistance is low, the complexity of the preparation process is reduced, and the production cost is lowered.

Description

technical field [0001] The invention relates to an electronic device, in particular to a graphene / silver nanowire-based transparent conductive film and a preparation method thereof, belonging to the technical field of electronics. Background technique [0002] Transparent conductive films are an important part of electronic information products. The general requirements for transparent conductive films are that the sheet resistance should be as low as possible, and the light transmittance in the visible light range should be as high as possible. At the same time, as a commercial product, the production cost should be as low as possible. [0003] Since In 2 o 3 :SnO 2 (ITO) has the characteristics of high visible light transmittance and low resistance. ITO is mostly used as an electrode in current optoelectronic devices, but it has the following disadvantages: (1) Indium in ITO is highly toxic, and it is harmful to the human body during preparation and application. Harmfu...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01B5/14H01B13/00H01B1/02H01B1/04
Inventor 陈苏杰唐伟冯林润郭小军
Owner SHANGHAI JIAO TONG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap