Oxide sintered body, sputtering target, transparent conductive thin film and manufacturing method therefor

A technology of transparent conductivity and manufacturing method, which is applied in the field of sputtering targets, can solve the problems of expensive power supply, increased equipment cost, and inability to completely suppress breakdown, and achieve low absolute value of internal stress, low absolute value of internal stress, Excellent effect of permeability

Inactive Publication Date: 2005-11-02
SUMITOMO METAL MINING CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0034] However, these power supplies with breakdown suppression function are very expensive, leading to an increase in equipment cost
Also, even with these power supplies with breakdown suppression, breakdown cannot be completely suppressed

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1-8

[0106] In the average particle size of 1 μm or less 2 o 3 Powder, WO with an average particle size of 1 μm or less 3 ZnO powder and ZnO powder with an average particle size of 1 μm or less are used as raw material powders. Will In 2 o 3 Powder, WO 3 powder, and ZnO powder, according to the ratio of 0.004 to 0.023 in the ratio of tungsten to W / In atomic number ratio, zinc is prepared in the ratio of 0.004 to 0.100 in the ratio of Zn / In atomic number ratio, and put into the resin tube together with water, and use Wet ball mill mixing. At this time, using hard ZrO 2 Balls, mixed for 18 hours. After mixing, the slurry is taken out, filtered, dried and granulated. Apply 3 ton / cm with a cold hydrostatic press 2 The pressure to shape the obtained granulated powder.

[0107] Next, the obtained molded body was sintered as follows. at every 0.1m 3 The volume of the furnace is 100 liters per minute, and the furnace is sintered at 1450° C. for 20 hours under the environment of...

Embodiment 9-30

[0131] Next, the oxide sintered bodies produced in Examples 1 to 8 were subjected to an atmospheric pressure of 1×10 -1 Heating in a vacuum of Pa, performing reduction treatment, and controlling the specific resistance. By setting the annealing temperature at 700°C and the annealing time in the range of 1 to 10 hours, oxide sintered bodies with various specific resistances were obtained. The annealing time of Examples 9-16 is 1 hour, the annealing time of Examples 17-24 is 2 hours, and the annealing time of Examples 25-32 is 10 hours.

[0132] It was confirmed by powder X-ray diffraction measurement that the crystal phase constituting the oxide sintered body did not change before and after annealing.

[0133] After the annealing treatment, polishing was performed in the same manner as in Examples 1 to 8, and welding was performed on a back plate made of oxygen-free copper to prepare a sputtering target. Using the obtained sputtering target, DC sputtering was performed under ...

Embodiment 33～48

[0144] (Examples 33 to 48, Comparative Example 9)

[0145] Next, the relationship between the specific resistance of the transparent conductive thin film and the specific resistance of the sputtering target when the mixed amount of oxygen in the sputtering gas during sputtering was changed was investigated. In embodiment 3 (target specific resistance 1.0kΩcm), embodiment 11 (target specific resistance 5 × 10 -1 Ωcm), Example 19 (the specific resistance of the target is 6×10 -2 Ωcm), implementation 27 (specific resistance of target 2×10 -3 Ωcm), and the sputtering target obtained in Comparative Example 3 (target specific resistance 21kΩcm), installed on the negative pole of the non-magnetic target of the DC magnetron sputtering device, at the opposite position of the sputtering target Set up the glass substrate.

[0146] The distance between the target and the substrate is 80 mm, pure Ar gas is introduced, and O is mixed in the range of 0 to 15%. 2 Gas, the gas pressure is ...

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Abstract

There is provided an amorphous transparent conductive thin film with a low resistivity, a low absolute value for the internal stress of the film, and a high transmittance in the visible light range, an oxide sintered body for manufacturing the amorphous transparent conductive thin film, and a sputtering target obtained therefrom. An oxide sintered body is obtained by: preparing In2O3 powder, WO3 powder, and ZnO powder with an average grain size of less than 1 mum so that tungsten is at a W / In atomic number ratio of 0.004 to 0.023, and zinc is at a Zn / In atomic number ratio of 0.004 to 0.100; mixing the prepared powder for 10 to 30 hours; granulating the obtained mixed powder until the average grain size is 20 to 150 mum; molding the obtained granulated powder by a cold isostatic press with a pressure of 2 to 5 ton / cm2, and sintering the obtained compact at 1200 to 1500 degree.C. for 10 to 40 hours in an atmosphere where oxygen is introduced into the atmosphere of the sinter furnace at a rate of 50 to 250 liters / min per 0.1 m3 furnace volume.

Description

technical field [0001] The present invention relates to an amorphous transparent glass with low internal stress and low specific resistance used in display elements such as liquid crystal display (LCD) elements, organic electroluminescence (EL) elements, and inorganic EL elements, or touch panels, etc. A conductive thin film, an oxide sintered body used as a raw material for producing the transparent conductive thin film by a DC sputtering method, and a sputtering target using the oxide sintered body. Background technique [0002] Transparent conductive films are highly conductive (e.g., 1×10 -3 Ωcm or less) and high transmittance in the visible light region, so in addition to being used as electrodes for solar cells, liquid crystal display elements, and other various light-receiving elements, it can also be used as automotive window glass, or Heat-reflecting film for window glass of buildings, various anti-static interference films, and transparent heating element for anti...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50B23K1/00C04B35/00C04B35/01C04B35/495C04B37/02C23C14/08C23C14/34H01B5/14H01B13/00H05B33/14H05B33/28
CPCC04B2235/5445C23C14/08C04B2237/124C04B35/6261C04B2235/6586Y10S428/918C04B2235/664C04B2235/77C04B37/026C04B35/62625C04B2235/96C04B2235/6584C04B35/01C04B2237/34C04B35/62655C04B2235/3284C04B2237/403C23C14/3414C04B2235/3286C04B2235/408C04B2235/786C04B35/64C04B2237/12C04B2235/656C04B2235/3258C04B2235/5436C23C14/34H05B33/10
Inventor 阿部能之中山德行小原刚和气理一郎
Owner SUMITOMO METAL MINING CO LTD
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