Dope-transferring method for reducing sheet resistance of graphene

A transfer method and graphene technology, applied in chemical instruments and methods, inorganic chemistry, non-metallic elements, etc., can solve the problems of easy defect of graphene and high square resistance of graphene film, and achieve low cost, good integrity, The effect of reducing exposure

Active Publication Date: 2014-09-03
WUXI GRAPHENE FILM +1
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to solve the problem that graphene grown by CVD method is prone to defects during the transfer process, resulting in high squa

Method used

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  • Dope-transferring method for reducing sheet resistance of graphene
  • Dope-transferring method for reducing sheet resistance of graphene

Examples

Experimental program
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Example Embodiment

[0031] Example 1

[0032] 1. Put the transfer film / graphene etched with hydrochloric acid into deionized water to wash away the impurities adsorbed on the graphene surface. Take it out, blow it dry, and bake it at 80°C for 15 minutes to obtain the transfer film / graphene;

[0033] 2. Dope the transfer film / graphene with 1mol / L doping agent (referred to as Fe) prepared by ferric chloride and nitromethane. The doping method is spraying for 2 minutes, then baking at 50°C for 3 minutes, and the transfer film is obtained after dust removal. / graphene / Fe; dope the transfer film / graphene with 1mmol / L doping agent (denoted as Ca) prepared by calcium chloride and absolute ethanol. The doping method is to spray for 10min, then dry and remove dust to obtain transfer film Membrane / graphene / Ca;

[0034] 3. Transfer film / graphene / Fe to glass to obtain glass / Fe / graphene / transfer film, bake at 80°C for 15 minutes, take it out and peel off the transfer film to obtain glass / Fe / graphene;

[00...

Example Embodiment

[0037] Example 2

[0038] 1. Put the transfer film / graphene etched with hydrochloric acid into deionized water to wash away the impurities adsorbed on the graphene surface. Take it out, blow it dry, and bake it at 150°C for 1 minute to obtain the transfer film / graphene;

[0039] 2. Dope the transfer film / graphene with a 500mmol / L doping agent (referred to as TFSA) prepared from bistrifluoromethanesulfonylimide (TFSA) and nitromethane. The doping method is to spray for 2min, then 50°C Baking for 3 minutes, dedusting to obtain transfer film / graphene / TFSA;

[0040] 3. Transfer the transfer film / graphene / TFSA (referred to as TFSA) to an acrylic plate to obtain an acrylic plate / TFSA / graphene / transfer film, bake at 90°C for 20 minutes, remove the transfer film, and obtain an acrylic plate / TFSA / Graphene;

[0041] 4. Transfer the film / graphene / TFSA to the acrylic plate / TFSA / graphene in step 3, bake at 90°C for 20 minutes, remove the transfer film, and obtain the acrylic plate / TFSA...

Example Embodiment

[0043] Example 3

[0044] 1. Put the transfer film / graphene etched with hydrochloric acid into deionized water to wash away the impurities adsorbed on the graphene surface. Take it out, blow it dry, and bake at 30°C for 10 hours to obtain the transfer film / graphene;

[0045] 2. Dope the transfer film / graphene with 100mmol / L doping reagent (referred to as Fe) prepared by ferric chloride and nitromethane. The doping method is spin coating for 30s, then baked at 50°C for 3min, and the transfer film is obtained after dust removal. Membrane / graphene / Fe; dope transfer film / graphene with 100mmol / L doping agent (referred to as HCl) prepared by hydrochloric acid and water, the doping method is spin coating for 30s, then dried and dedusted to obtain transfer film / graphene Graphene / Ca;

[0046] 3. Transfer film / graphene / Fe to polyethylene terephthalate (referred to as PET) to obtain PET / Fe / graphene / transfer film, bake at 90°C for 20min, take out and peel off the transfer film to obtain...

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Abstract

The invention discloses a dope-transferring method for reducing the sheet resistance of graphene. According to the method, a graphene film on a transfer film is doped with a doping reagent, the doped graphene film is transferred to a target substrate, and at least two graphene films are transferred by repeating the steps. Graphene on the transfer film can also be undoped, or different doping reagents can be used for multiple times of transferring in different permutation and combination sequences. By means of the method, a large-area low-sheet-resistance graphene material can be obtained conveniently and quickly, the obtained material is high in conductivity and stability, and meanwhile, sheet resistance reduction caused after dope-transferring of graphene can be effectively reduced or even avoided.

Description

technical field [0001] The invention belongs to the field of transparent conductive thin film materials, in particular to a doping transfer method for reducing graphene square resistance. Background technique [0002] Graphene, English name Graphene, is a two-dimensional lattice structure in which carbon atoms are arranged in a hexagonal manner. This graphite crystal thin film has become the focus of scientific and industrial attention since it was discovered by scientists at the University of Manchester in 2004. The thickness of graphene is only 0.335nm, which is not only the thinnest among known materials, but also very strong and hard; as a single substance, it transfers electrons faster than all known conductors and semiconductors at room temperature, and its intrinsic migration The rate can reach 2×10 5 cm 2 / (V·S), this excellent electrical property makes it have broad application prospects in high-frequency electronic devices. In order to realize its potential app...

Claims

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Application Information

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IPC IPC(8): H01B13/00C01B31/04C01B32/194
Inventor 杨军邱玉锐王炜李慧峰
Owner WUXI GRAPHENE FILM
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