Physical vapor deposition device and method for Nano silicon-crystal thin film of solar battery

Abstract

A physical evaporation deposition apparatus for preparing the nano-crystal silicon film of solar cell is based on the vacuum evaporation coating machine but has the physical evaporation deposit function. It method includes such steps as designing the figuration of vacuum evaporation coating machine, using ion beam method to deposit nano-crystal silicon film, and gas-phase doping to prepare the PIN structure of solar cell. Its advantage is high photoelectric conversion efficiency.

Description

technical field [0001] The invention relates to a method for making a solar cell nanocrystalline silicon thin film in the field of new energy materials; in particular, it relates to a physical vapor deposition (PVD) method for depositing a solar cell nanocrystalline silicon thin film by a plasma ion beam. Background technique [0002] Amorphous silicon (a-Si:H) thin-film solar cells have made great progress in basic theoretical research and production technology in recent years, and the photoelectric conversion efficiency has been continuously improved, which has become an important aspect of the promotion and application of solar cells on the ground. ([1] Edited by Chen Guanghua and Deng Jinxiang, New Electronic Thin Film Materials, Chemical Industry Press). The material structure of amorphous silicon is different from that of a perfect single crystal. Its microstructure is a random network of covalent bonds, short-range order, long-range disorder, and no lattice periodicit...

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Problems solved by technology

[0007] In contrast to silane SiH 4 Glow discharge PCVD deposits microcrystalline silicon thin films. Due to the lower excited energy state of silane, compared with amorphous silicon, although the grain size has increased, it still contains a higher ratio of hydrogen atoms. This silicon thin film is used to make solar energy Batteries cannot fundamentally solve the problem of light decay

Microcrystalline silicon is deposited by glow discharge. The excited silicon atomic group has a low energy state in the electric field. Its motion state is a drift behavior. It has poor migration and diffusion capabilities during the deposition process, and it is impossible to avoid the formation of a large number of lattices in the film. Defects, this kind of high-defect random network, must use hydrogen atoms to saturate the dangling bonds, and it is inseparable from hydrogen atoms, so this method of making solar cells with silicon thin films greatly limits the improvement of photoelectric conversion efficiency and service life

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