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67results about How to "Precise composition" patented technology

Method for producing a decorated profile body

A method for producing a decorated profile body comprises the following steps. In a first step, a profile body substrate is provided. In a second step, a decoration background is applied to the profile body substrate. In a third step, by means of a digital printing process, a decoration finish is applied to the profile body substrate which decoration finish covers the decoration background of the profile body substrate at least in some sections. The decoration finish is applied to the profile body substrate after the applied decoration background, wherein the decoration background and the decoration finish together form a decoration of the profile body substrate. This creates a decorated profile body in which the decoration background has a color composition which is a substantially expanded color space compared to the decoration finish. The decoration finish is printed using a digital printing process having a comparatively limited color space applied according to the CMYK principle. The color composition of the decoration background is selected in such a way that essentially no metamerism effect occurs between the decoration of the decorated profile body and an adjacent reference decoration of a furniture panel, the reference decoration being substantially identical thereto.
Owner:REHAU IND SE & CO KG

Europium doped bismuth ferrite film, preparation method and application thereof

The invention discloses a europium doped bismuth ferrite film, which comprises a silicon substrate with lanthanum nickelate as the buffer layer and a target material with a composition formula of Bi1-xEuxFeO3 (with x being greater than or equal to 0 and smaller than or equal to 0.07). The target material is deposited on the substrate. The invention also discloses a preparation method of the europium doped bismuth ferrite film. The method consists of: cleaning the substrate, placing the target material and the substrate in a film coating chamber, adjusting the pressure to less than 5*10<-4>Pa, raising the temperature of the substrate to 700DEG C at a speed of 10DEG C per minute; adjusting the sputtering pressure to 10Pa, maintaining the state for 10min under 700DEG C and an oxygen pressure of 10Pa, making adjustment to invert the substrate and rotate the target material in forward direction, keeping a 6cm distance between the substrate and the target material, employing a pulse laser to conduct film deposition for 60min and performing heat preservation for 30min, then conducting cooling at a speed of 20DEG C per minute to 200DEG C, and taking out the product, thus obtaining the europium doped bismuth ferrite film. The preparation method provided by the invention has the advantages of easily controllable reaction process and easily available raw materials. The europium doped bismuth ferrite film has significantly improved crystallization properties and electric leakage properties, and a smaller optical band gap, thus improving the photovoltaic properties of BiFeO3 films. The europium doped bismuth ferrite film has wide application prospects.
Owner:EAST CHINA NORMAL UNIV

Ce-doped Bi4-xCexTi3O12 electro-resistance changing film and preparation method of resistance changing capacitor

The invention discloses a Ce-doped Bi4-xCexTi3O12 electro-resistance changing film and a preparation method of a resistance changing capacitor. The preparation method of the resistance changing capacitor, disclosed by the invention, comprises the following steps of: taking Pt/TiO2/Si as a substrate, preparing a Bi4-xCexTi3O12 electro-resistance changing film by adopting a sol-gel (Sol-Gel) process, preparing a metal film electrifying pole by adopting a direct-current magnetron sputtering process and acquiring a corresponding resistance changing capacitor. The Ce-doped Bi4-xCexTi3O12 electro-resistance changing film and the preparation method of the resistance changing capacitor, disclosed by the invention, have the advantages that (1) components of the film are precisely controlled, the doped components are easily adjusted, the film is prepared in a large area and the cost is low; (2) by adopting the process scheme of spin coating for a plurality of times, layering and preheating, linearly heating and insulating, the degree of crystallinity can be improved, the inner stress of the film is reduced, and the quality and the property of the film are improved; (3) the method disclosed by the invention is compatible with a semiconductor Si integrating process; and (4) by doping an appropriate amount of Ce, the resistance changing property of the Bi4-xCexTi3O12 film can be obviously improved.
Owner:GUILIN UNIV OF ELECTRONIC TECH
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