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Europium doped bismuth ferrite film, preparation method and application thereof

A bismuth ferrite, thin film technology, applied in metal material coating process, vacuum evaporation coating, coating and other directions, can solve the problems of thin film leakage, large band gap, etc., to improve photovoltaic performance and reduce optical band gap , the effect of improving the leakage performance

Inactive Publication Date: 2014-07-23
EAST CHINA NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Aiming at defects such as large bandgap of ferroelectric materials in the prior art and easy leakage of thin films, the present invention provides a rare earth element europium (Eu) doped bismuth ferrite (BiFeO 3 ) film and its preparation method

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  • Europium doped bismuth ferrite film, preparation method and application thereof
  • Europium doped bismuth ferrite film, preparation method and application thereof
  • Europium doped bismuth ferrite film, preparation method and application thereof

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preparation example Construction

[0037] The preparation method of the bismuth ferrite thin film doped with europium proposed by the present invention comprises the following steps:

[0038] (1) Target material: select Bi with a purity of 99.99% 1-x Eu x FeO 3 Target, 0≤x≤0.07.

[0039] (2) Substrate: use lanthanum nickelate as the buffer layer of the silicon substrate as the substrate, first use detergent to remove grease, then use acetone to remove the residue of detergent, then put it in alcohol for ultrasonication for 30 minutes, and finally put it in After ultrasonication in ionized water for 30 min, it was taken out and stored in alcohol solution.

[0040] (3) Vacuuming: place the target and substrate in the coating chamber, and use a mechanical pump and a molecular pump to pump the vacuum chamber to a pressure of 5×10 -4 below pa.

[0041] (4) Heating the substrate:

[0042] Turn on the heating equipment, and control the substrate by computer to heat the substrate at a rate of 10°C per minute.

...

Embodiment 1

[0051] (1) Selection of target material: BiFeO with a purity of 99.99% is used 3 target;

[0052] (2) Cleaning the silicon substrate with lanthanum nickelate as a buffer layer: this substrate can be prepared on a commercial silicon substrate by a sol-gel method. First use detergent to remove grease, then use acetone to remove the residue of detergent, then put it in alcohol for 30 minutes, and finally put it in deionized water for 30 minutes and take it out;

[0053] (3) Vacuuming: the BiFeO 3 The target and the silicon substrate with lanthanum nickelate as the buffer layer are placed in the coating chamber, the substrate is fixed on the substrate disk with silver paste, and the vacuum is pumped to a pressure of 5×10 by using a mechanical pump and a molecular pump. -4 Below Pa;

[0054] (4) Substrate heating: Turn on the heating equipment and control it with a computer to raise the temperature at 10°C per minute to 700°C;

[0055] (5) When the temperature reaches the prese...

Embodiment 2

[0062] (1) Selection of target material: Bi with a purity of 99.99% is used 0.97 Eu 0.03 FeO 3 target;

[0063] (2) Clean the silicon substrate with lanthanum nickelate as the buffer layer: first use detergent to remove grease, then use acetone to remove the residue of detergent, then put it in alcohol for 30 minutes, and finally put it in deionized water for 30 minutes. take out;

[0064] (3) Vacuuming: the Bi 0.97 Eu 0.03 FeO 3 The target and the silicon substrate with lanthanum nickelate as the buffer layer are placed in the coating chamber, the substrate is fixed on the substrate disk with silver paste, and the vacuum is pumped to a pressure of 5×10 by using a mechanical pump and a molecular pump. -4 Below Pa;

[0065] (4) Substrate heating: Turn on the heating equipment and control it with a computer to raise the temperature at 10°C per minute to 700°C;

[0066] (5) When the temperature reaches the preset value, open the oxygen channel, rush in oxygen with a purit...

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Abstract

The invention discloses a europium doped bismuth ferrite film, which comprises a silicon substrate with lanthanum nickelate as the buffer layer and a target material with a composition formula of Bi1-xEuxFeO3 (with x being greater than or equal to 0 and smaller than or equal to 0.07). The target material is deposited on the substrate. The invention also discloses a preparation method of the europium doped bismuth ferrite film. The method consists of: cleaning the substrate, placing the target material and the substrate in a film coating chamber, adjusting the pressure to less than 5*10<-4>Pa, raising the temperature of the substrate to 700DEG C at a speed of 10DEG C per minute; adjusting the sputtering pressure to 10Pa, maintaining the state for 10min under 700DEG C and an oxygen pressure of 10Pa, making adjustment to invert the substrate and rotate the target material in forward direction, keeping a 6cm distance between the substrate and the target material, employing a pulse laser to conduct film deposition for 60min and performing heat preservation for 30min, then conducting cooling at a speed of 20DEG C per minute to 200DEG C, and taking out the product, thus obtaining the europium doped bismuth ferrite film. The preparation method provided by the invention has the advantages of easily controllable reaction process and easily available raw materials. The europium doped bismuth ferrite film has significantly improved crystallization properties and electric leakage properties, and a smaller optical band gap, thus improving the photovoltaic properties of BiFeO3 films. The europium doped bismuth ferrite film has wide application prospects.

Description

technical field [0001] The invention relates to the technical field of ferroelectric and photovoltaic materials, and specifically proposes a rare earth element europium (Eu) doped bismuth ferrite (BiFeO 3 ) film and its preparation method and application. Background technique [0002] Solar energy is an extremely important renewable energy source. At present, silicon, III-V compounds, copper indium gallium selenide (CIGS), dye-sensitized materials, and polymers are mainly used as solar energy materials. Silicon-based solar cells have been produced on a large scale, but its photoelectric conversion mechanism determines that only light with energy exceeding the band gap can generate current, which leads to the problem of solar energy conversion: a small band gap can absorb more photons, generate a larger current but The voltage is insufficient; while the large bandgap can generate a larger voltage but the current is limited, most of the solar photons cannot be absorbed, so t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/06C23C14/28
Inventor 刘建翟学珍曹辉义周文亮杨平雄褚君浩
Owner EAST CHINA NORMAL UNIV
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