The invention discloses a
europium doped
bismuth ferrite film, which comprises a
silicon substrate with
lanthanum nickelate as the buffer layer and a target material with a composition formula of Bi1-xEuxFeO3 (with x being greater than or equal to 0 and smaller than or equal to 0.07). The target material is deposited on the substrate. The invention also discloses a preparation method of the
europium doped
bismuth ferrite film. The method consists of: cleaning the substrate, placing the target material and the substrate in a
film coating chamber, adjusting the pressure to less than 5*10<-4>Pa, raising the temperature of the substrate to 700DEG C at a speed of 10DEG C per minute; adjusting the
sputtering pressure to 10Pa, maintaining the state for 10min under 700DEG C and an
oxygen pressure of 10Pa, making adjustment to invert the substrate and rotate the target material in forward direction, keeping a 6cm distance between the substrate and the target material, employing a pulse
laser to conduct film deposition for 60min and performing heat preservation for 30min, then conducting cooling at a speed of 20DEG C per minute to 200DEG C, and taking out the product, thus obtaining the
europium doped
bismuth ferrite film. The preparation method provided by the invention has the advantages of easily controllable reaction process and easily available raw materials. The europium doped
bismuth ferrite film has significantly improved
crystallization properties and electric leakage properties, and a smaller optical
band gap, thus improving the photovoltaic properties of BiFeO3 films. The europium doped
bismuth ferrite film has wide application prospects.