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Method for extracting diamond abrasives from silicon carbide crystal grinding waste materials

A technology of silicon carbide and diamond, which is applied in the field of silicon carbide crystal growth, can solve the problems of thinning diamond particles, unsuitable for enterprise production, waste of energy, etc., achieve moderately low diamond particle size, low production cost of enterprises, and overcome waste of energy Effect

Active Publication Date: 2012-11-14
XINJIANG TANKEBLUE SEMICON
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

But this method is not suitable for enterprise production, because in the process of ball milling, due to the self-friction between diamond particles, the diamond particles will become thinner, so that the particle size requirements for diamond particles cannot be met.
[0005] In the process of realizing the present invention, the inventor found that there are at least some defects in the prior art, such as waste of energy, too small diamond particles, and high production costs for enterprises.

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  • Method for extracting diamond abrasives from silicon carbide crystal grinding waste materials
  • Method for extracting diamond abrasives from silicon carbide crystal grinding waste materials
  • Method for extracting diamond abrasives from silicon carbide crystal grinding waste materials

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Embodiment Construction

[0024] The preferred embodiments of the present invention will be described below in conjunction with the accompanying drawings. It should be understood that the preferred embodiments described here are only used to illustrate and explain the present invention, and are not intended to limit the present invention.

[0025] According to an embodiment of the present invention, such as Figure 1a-Figure 2d As shown, a method for extracting diamond abrasive from silicon carbide crystal grinding waste is provided.

[0026] The method for extracting diamond abrasives from silicon carbide crystal grinding waste of the present embodiment includes:

[0027] (1) Washing treatment: add the silicon carbide crystal grinding waste to a sulfuric acid solution with a concentration of 10-20% (preferably 15%), soak for at least 24 hours, and let the silicon carbide crystal grinding waste and sulfuric acid solution react completely, and let it stand for precipitation; for example , the proportio...

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Abstract

The invention discloses a method for extracting diamond abrasives from silicon carbide crystal grinding waste materials. The method comprises the following steps that silicon carbide crystal grinding waste materials are added into sulfuric acid solution with the concentration being 10 to 20 percent to be at least soaked for 24 hours, so the silicon carbide crystal grinding waste materials and the sulfuric acid solution take complete reaction and are then subjected to still standing and sedimentation; supernatant after the still standing sedimentation is poured out, and deionized water is used for diluting the precipitates after the still standing sedimentation for 3 to 5 times; the obtained mixture is placed into a baking oven to be subjected to baking treatment; and the obtained mixture is placed into a tubular furnace to be subjected to constant temperature treatment for 1 to 3 hours after being heated to the preset temperature in the air under the temperature condition being 520 to 750 DEG C, and the required diamond abrasives are obtained. The method for extracting diamond abrasives from silicon carbide crystal grinding waste materials provided by the invention can overcome the defects of energy source waste, too small diamond particle granularity, high enterprise production cost and the like in the prior art, and the advantages of energy source saving, proper diamond particle granularity and low enterprise production cost can be realized.

Description

technical field [0001] The invention relates to the technical field of silicon carbide crystal growth, in particular to a method for extracting diamond abrasive from silicon carbide crystal grinding waste. Background technique [0002] After the silicon carbide crystal is successfully grown, it needs to be processed and sliced ​​before it can be sold. One of the procedures is the rough polishing of the silicon carbide crystal surface - the crystal is polished and polished on a self-made polishing machine. Considering that the hardness of silicon carbide is second only to diamond, diamond powder (particle diameter 40-60 microns) is used as the abrasive. Since the price of diamond powder is relatively expensive, from the perspective of reducing operating costs for enterprises, it is affirmative to reuse diamond abrasives, which is also consistent with the creation of a resource-saving society advocated by the state. [0003] It is preliminarily determined that the main compo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/06C09K3/14C01B32/28
CPCY02P20/10
Inventor 李坚陈蛟陈斌邹宇孟宪府
Owner XINJIANG TANKEBLUE SEMICON
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