Ce-doped Bi4-xCexTi3O12 electro-resistance changing film and preparation method of resistance changing capacitor

Abstract

The invention discloses a Ce-doped Bi4-xCexTi3O12 electro-resistance changing film and a preparation method of a resistance changing capacitor. The preparation method of the resistance changing capacitor, disclosed by the invention, comprises the following steps of: taking Pt / TiO2 / Si as a substrate, preparing a Bi4-xCexTi3O12 electro-resistance changing film by adopting a sol-gel (Sol-Gel) process, preparing a metal film electrifying pole by adopting a direct-current magnetron sputtering process and acquiring a corresponding resistance changing capacitor. The Ce-doped Bi4-xCexTi3O12 electro-resistance changing film and the preparation method of the resistance changing capacitor, disclosed by the invention, have the advantages that (1) components of the film are precisely controlled, the doped components are easily adjusted, the film is prepared in a large area and the cost is low; (2) by adopting the process scheme of spin coating for a plurality of times, layering and preheating, linearly heating and insulating, the degree of crystallinity can be improved, the inner stress of the film is reduced, and the quality and the property of the film are improved; (3) the method disclosed by the invention is compatible with a semiconductor Si integrating process; and (4) by doping an appropriate amount of Ce, the resistance changing property of the Bi4-xCexTi3O12 film can be obviously improved.

Description

technical field [0001] The invention relates to the field of materials and devices in microelectronics, specifically a Pt / TiO 2 Preparation of Ce-doped Bi on Si substrate 4-x Ce x Ti 3 o 12 The invention discloses a preparation method of an electroresistive variable thin film and a resistive variable capacitor. Background technique [0002] The currently widely used semiconductor dynamic random access memory (DRAM) has a volatile defect, that is, when the power is turned off, all stored data will be erased from the DRAM, resulting in data loss. However, non-volatile memories such as Flash have technical obstacles such as slow read and write speeds and low storage density, and also face serious scaling problems. As the development of traditional memory cell structures has approached the size limit, new types of non-volatile memories must be developed. [0003] In recent years, scientists have researched and developed some new types of non-volatile memories. Such as: ma...

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Problems solved by technology

In the past ten years, the electroresistive switching effect has been found in various material systems, such as: rare earth manganese oxide materials (Pr 0.7 Ca 0.3 MnO 3 etc.), transition metal perovskite structure materials (SrZrTiO 3 , SrTiO 3 etc.), binary transition metal oxide materials (NiO, TiO 2 、Cu x O, Cu-MoO x , ZnO, Mg-ZnO, Co-ZnO, Mn-ZnO, Fe 2 o 3 , ZrO 2 etc.), organic polymer semiconductor materials (pentacene, etc.) and some sulfide materials, etc., but there is still a certain gap between the performance of most resistive materials and practical requirements

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