Method for preparing cadmium-based alloy nano material

A technology of nanomaterials and cadmium-based alloys, applied in nanotechnology, nanotechnology, chemical instruments and methods, etc., to achieve the effect of precise and controllable components

Active Publication Date: 2020-11-24
BEIJING INSTITUTE OF TECHNOLOGYGY
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  • Summary
  • Abstract
  • Description
  • Claims
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Problems solved by technology

Unfortunately, there is no report on the synthesis of alloy semiconductor nanowires with precise controllable components and wide-ranging energy gap tuning by using the ion exchange method.

Method used

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  • Method for preparing cadmium-based alloy nano material
  • Method for preparing cadmium-based alloy nano material
  • Method for preparing cadmium-based alloy nano material

Examples

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preparation example Construction

[0127] CD x m 2 / m-x The preparation of Te alloy semiconductor nanowires, the preparation method comprises the following steps:

[0128] 1) Dissolving the alcohol-soluble CdTe nanowire powder in polar solvent I, under the protection of an inert gas, stirred until clear to obtain an alcohol-soluble CdTe nanowire solution. The polar solvent environment is ethanol, ethylene glycol, N,N-dimethylformamide or dimethyl sulfoxide. The ratio of the alcohol-soluble CdTe nanowires to the polar solvent is 1:2-5.

[0129] 2) Dissolving M-doped metal ions in polar solvent I, under the protection of an inert gas, stirred until clear to obtain M-doped metal ion solutions with different molar concentrations. Wherein, the M-doped metal ions include: one of Ag, Pb, Zn, Ge, Sn, Sb, Bi, Cu, Mn, Eu, Sr, In, Tl and other metal ions. When doping metal ions (Pb, Zn, Ge, Sr, In) in the organic polar solvent and the cadmium ion binding energy in the CdTe nanowire are larger, use organic phosphorus r...

Embodiment 1

[0134] The preparation of embodiment 1 alcohol-soluble CdTe nanowires

[0135] 1) According to the method of the authorized Chinese invention patent (patent number: 201110050390.X), an oil-soluble CdTe nanowire with a diameter of about 7 nm and a length of more than 1 μm was prepared.

[0136] 2) Dilute the above-mentioned oil-soluble CdTe nanowires with toluene, add a mixture of acetone and methanol (the volume ratio of the quality of the nanowires to the mixture of acetone and methanol is 20mg / mL) to precipitate the nanowires, and centrifuge at 7000rpm*3min Finally, the supernatant was discarded to obtain oil-soluble nanowire precipitates, and the above cleaning process was repeated three times to obtain high-purity oil-soluble nanowire materials. Finally, the nanowire precipitates were vacuum-dried at 60°C and ground to obtain oil-soluble nanowire thread powder.

[0137] 3) Blend 100mg of oil-soluble CdTe nanowire powder with 2mL of mercaptohexanol and 15mL of organic polar ...

Embodiment 2

[0138] The preparation of embodiment 2 alcohol-soluble CdTe nanowires

[0139] The difference from Example 1 is that 80 mg of oil-soluble CdTe nanowire powder is blended with 6 mL of mercaptohexanol and 10 mL of polar solvent into a three-necked flask and continuously stirred to form a suspension, and the reaction temperature is controlled at 10 °C and The reaction time is 50min.

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Abstract

The invention discloses a method for preparing a cadmium-based alloy nano material. According to the method, a material I containing an alcohol-soluble cadmium-based nano material, a doped metal source and an organic polar solvent I is subjected to an ion exchange reaction, and the cadmium-based alloy nano material is obtained. According to the method, a plurality of CdxM2/m-xTe alloy semiconductor nanowires, CdxM2/m-xSe alloy semiconductor nanosheets and CdxM2/m-xSe alloy semiconductor nanodots with accurate and controllable components and large-range tunable energy gaps can be successfully synthesized.

Description

technical field [0001] The application relates to a method for preparing cadmium-based alloy nanomaterials, which belongs to the technical field of nanomaterial synthesis. Background technique [0002] Inorganic semiconductor nanowires have attracted extensive attention due to the combination of excellent optoelectronic properties and one-dimensional photoelectric transport properties of semiconductor materials. However, due to the very limited bandgap available in conventional semiconductor nanowires, continuous tunability of the energy gap cannot be achieved, thus limiting its application in multifunctional tunable nano-opto / electronic devices and photoelectric conversion devices. [0003] At present, alloying semiconductor materials with different band gaps has become an effective means to expand the energy gap of nanomaterials. Therefore, the preparation of alloy semiconductor nanowires has become a research hotspot. In recent years, people have successfully prepared c...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B19/00B82Y30/00B82Y40/00
CPCC01B19/002C01B19/007B82Y30/00B82Y40/00C01P2004/04C01P2004/64
Inventor 钟海政李冬张小丽
Owner BEIJING INSTITUTE OF TECHNOLOGYGY
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