Location-specific NAND (ls NAND) memory technology and cells

a technology of location-specific nand and memory cells, which is applied in the direction of digital storage, instruments, semiconductor devices, etc., can solve the problems of complex and costly technology, cell technology never mainstream non-volatile cells, and difficult if not impossible complete removal of charge stored in nitrid
US20070121380A1Inactive Publication Date: 2007-05-31THOMAS MAMMEN
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Patent Information

Authority / Receiving Office
US · United States
Patent Type
Applications(United States)
Current Assignee / Owner
THOMAS MAMMEN
Publication Date
2007-05-31
Estimated Expiration
Not applicable · inactive patent

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Abstract

The use of a Nitride layer or a silicon-nodule layer capable of location-specific (LS) charge storage, allow easy vertical scaling and implementation of NOR and NAND NVM array and technology. If the charge is stored in the traps in the Nitride storage layer, a Oxide Nitride Oxide is used as the storage element and if charge is stored in potential wells of discrete silicon-nodules, or Carbon Bucky-ball layers, an Oxide silicon-nodule Oxide storage element, or an Oxide Bucky-ball Oxide layer is used as the storage element. The problem of location-specific NAND memory is the inability to erase the cells with repeatable results. A novel erase method, Tunnel Gun (TG) method, that generate holes for consistent erase of LS storage elements and typical NAND Cells that erase by the disclosed method and programmed by either by Fouler-Nordheim (FN) tunneling or Low Current Hot Electron (LCHE) method are disclosed.
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Description

FIELD OF INVENTION

[0001] This invention relates to the structure and method of Programmable / Erasable Non-Volatile Memory cell technology for data storage applications. BACKGROUND

[0002] Data storage in discrete locations in non conducting traps in Silicon Nitride layers or in barrier isolated potential wells in silicon nodule layers and carbon bucky ball layers, have been considered possibilities for non Volatile applications instead of the typical floating gate made of poly-silicon, for vertical scaling of the Non-Volatile Memory cells. These cells are called Location-Specific (LS) Charge storage cells as the charge is stored in discrete isolated traps or discrete potential wells in specific locations in the storage element and does not spread during operation. The problem has been mainly the erase of these cells, typically they require high voltages to be applied to the junctions and the wells to erase these types of cells as extracting charge from traps or potential wells comple...

Claims

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