Graphene plasmon device used for enhancing infrared spectrum detection and preparation method thereof

A technology of infrared spectroscopy and graphene, which is applied in the field of infrared light detection, can solve the problems of limited detection ability, improved repeatability, narrow enhanced band, etc.

Active Publication Date: 2016-02-24
THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
View PDF3 Cites 40 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, at present, this technology has the defects of very narrow enhanced band, greatly limited detection capability, and poor repeatability, and it does not have the universal significance of trace molecular detection.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Graphene plasmon device used for enhancing infrared spectrum detection and preparation method thereof
  • Graphene plasmon device used for enhancing infrared spectrum detection and preparation method thereof
  • Graphene plasmon device used for enhancing infrared spectrum detection and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028] The objects and functions of the present invention and methods for achieving the objects and functions will be clarified by referring to the exemplary embodiments. However, the present invention is not limited to the exemplary embodiments disclosed below; it can be implemented in various forms. The essence of the description is only to help those skilled in the relevant art comprehensively understand the specific details of the present invention.

[0029] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. In the drawings, the same reference numerals represent the same or similar components, or the same or similar steps.

[0030] A schematic diagram of a longitudinal section of a graphene plasmonic device for enhanced infrared spectrum detection of the present invention is as figure 1 shown.

[0031] The graphene plasmonic device 100 includes a substrate 101 , a dielectric layer 102 , a graphene layer 103 ,...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
pore sizeaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention provides a graphene plasmon device used for enhancing infrared spectrum detection. The graphene plasmon device comprises a substrate, a dielectric layer, a graphene layer, a source electrode, a drain electrode metal layer and material to be detected which are arranged from the bottom to the top in turn. The substrate also acts as a gate electrode. The dielectric layer is deposited on the substrate. The graphene layer covers the dielectric layer. The source electrode and the drain electrode metal layer are deposited on the graphene layer. The source electrode and the drain electrode metal layer are conducted by graphene. The dielectric layer is clamped between the substrate and the graphene layer. The partial region of the graphene layer between the source electrode and the drain electrode metal layer has a periodic micro-nano structure which includes multiple continuous structures with step-shaped longitudinal sections. A material layer to be detected is arranged to cover the step-shaped structures. The material of the dielectric layer is selected from NaCl, KBr, CsI, CsBr, MgF2, CaF2, BaF2, LiF, AgBr, AgCl, ZnS, ZnSe, KRS-5, AMTIR1-6, Diamond and SiO2.

Description

technical field [0001] The invention relates to the technical field of infrared light detection, in particular to a graphene plasmonic device for enhancing infrared spectrum detection and a preparation method thereof. Background technique [0002] Infrared spectroscopy is a technology and method that directly detects molecular vibration modes to realize characteristic identification and quantitative analysis of substances. This technology has the advantages of high "fingerprint" characteristics, no need for sample labeling, fast response speed, the highest instrument penetration rate, and the most complete spectral library, etc. It is a powerful tool and an indispensable means to determine molecular composition, conformation and structural change information , Has been widely used in environmental monitoring, food safety testing, chemical composition analysis, explosives detection and biomedical treatment and other important fields related to the national economy and the peo...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/101H01L31/0236H01L31/028H01L31/18
CPCH01L31/02363H01L31/028H01L31/101H01L31/1804Y02P70/50
Inventor 胡海胡德波白冰刘瑞娜杨晓霞戴庆
Owner THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap