Production method of cubic MgZnO film

A technology of cubic structure and thin film, which is applied in the field of preparation of cubic structure MgZnO thin film, can solve problems such as phase separation of MgZnO thin film

Active Publication Date: 2013-07-17
SHENZHEN UNIV
View PDF1 Cites 14 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The embodiment of the present invention provides a method for preparing a cubic structure MgZnO thin film, aiming at solving the phase separation problem of MgZnO thin film under high magnesium composition in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Production method of cubic MgZnO film
  • Production method of cubic MgZnO film
  • Production method of cubic MgZnO film

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0024] The embodiment of the present invention is achieved like this, a kind of preparation method of cubic structure MgZnO thin film is provided, and it comprises the steps:

[0025] S01: Prepare Mg 0.5 Zn 0.5 O target;

[0026] S02: Put the substrate into the chamber, heat the substrate to 400°C-500°C, feed oxygen with a flow rate of 10sccm-70sccm, make the chamber pressure 4-8Pa, and then use the Mg 0.5 Zn 0.5 O target material, pulse deposition is performed on the substrate to obtain the cubic structure MgZnO thin film.

[0027] Specifically, in step S01, the Mg 0.5 Zn 0.5 The size of the O target is Φ60×30 mm, and the target can be obtained commercially or prepared by existing techniques.

[0028] Step S02 specifically includes cutting the substrate into a size of 15×20 cm, and placing it in a PLD equipment growth chamber after cleaning. Put the Mg on the target holder 0.5 Zn 0.5 The O target is used as the source material, and the cleaned substrate is placed dir...

Embodiment 1

[0035] Put the cleaned substrate into the chamber sample holder, first draw the chamber to 5.0×10 -4 Pa background vacuum degree, substrate temperature 450 ℃ for growth. The oxygen flow rate is fixed at 30 sccm, and the films are grown under working pressures of 0.015Pa, 0.2Pa, 2Pa, 4Pa, 6Pa, 8Pa and 10Pa by changing the amount of oxygen pumped out of the vacuum chamber per unit time. During the growth process, the laser energy and laser frequency were respectively fixed at 300mJ, 5Hz, the substrate-target distance was 60mm, the substrate temperature was maintained at 450°C, and the growth time was 120min, and the samples were taken out at room temperature.

Embodiment 2

[0037] Put the cleaned substrate into the chamber sample holder, first draw the chamber to 5.0×10 -4 The background vacuum degree of Pa, the substrate temperature was raised to 450°C for pretreatment for 30min, and then the growth was carried out. By changing the oxygen flow, the oxygen flow was fixed at 10 sccm, 30 sccm, 50 sccm and 70 sccm, respectively. During the growth process, the laser energy and laser frequency were fixed at 300mJ and 5Hz respectively, the substrate temperature was kept at 450°C, and the growth time was 120min. The oxygen pressure was fixed at 8Pa by adjusting the amount of gas pumped out of the cavity per unit time. Cool down to room temperature and remove the sample.

[0038] The normalized X-ray diffraction (XRD) figure ( figure 1 ) shows that all the thin film samples are a single MgO cubic phase, and no diffraction peaks of the MgO hexagonal phase appear. There are (200), (220), and (111) cubic structure MgZnO in the grown MgZnO thin films. As ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to the field of production of semiconductor materials and provides a production method of a cubic MgZnO film. The production method includes the steps of, preparing a Mg0.5Zn0.5O target; placing a substrate in a cavity, heating the substrate to 400 DEG C-500 DEG C, introducing 10sccm-70scm oxygen to keep the pressure intensity of the cavity at 4-8Pa, and subjecting the Mg0.5Zn0.5O target to pulse deposition on the substrate so as to obtain the cubic MgZnO film. Growth orientation of the cubic MgZnO film can be effectively controlled according to different migration energies of deposition atoms under different growth conditions, and the convenient and effective means for producing different-orientation high-quality cubic MgZnO multicomponent alloy films is provided.

Description

technical field [0001] The invention belongs to the field of semiconductor optoelectronic material preparation, and in particular relates to a preparation method of a cubic structure MgZnO thin film. Background technique [0002] ZnO thin film is a semiconductor material with direct bandgap and wide bandgap. The bandgap at room temperature is 3.37eV, and its exciton binding energy is as high as 60meV. It has excellent photoelectric, piezoelectric and dielectric properties, non-toxic, and easy to obtain raw materials. And cheap, it is considered to be the most potential ultraviolet and blue laser luminescent material. [0003] The atmosphere at a distance of 15-20km from the earth's surface contains a large amount of ozone, which can absorb ultraviolet light shorter than 280nm in sunlight, so this band of ultraviolet light in sunlight cannot reach the earth's surface, which is commonly called "solar blindness". Ultraviolet light". Usually we call the photodetector with the ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/08C23C14/28
Inventor 韩舜吕有明朱德亮曹培江马晓翠柳文军贾芳邵玉坤
Owner SHENZHEN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap