Lead-free ferroelectric thick film and manufacturing method thereof

A technology of ferroelectric thick film and manufacturing method, which is applied to the parts of fixed capacitors and the dielectric of fixed capacitors, can solve the problems of difficult control of film thickness, low energy storage density and energy storage efficiency, and low breakdown electric field, and achieve Conducive to energy storage density, increase energy storage density, and increase energy storage density

Active Publication Date: 2018-03-30
INNER MONGOLIA UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the thickness of ferroelectric thin films produced at present is small, the energy storage density and energy storage efficiency are low, and its ferroelectric properties are easily affected by the ground interface and surface, etc.
Moreover, the energy storage stability of bismuth sodium titanate base is poor, and the screen printing method has a large leakage current, which is not conducive to its energy storage, and the film thickness is not easy to control, resulting in a low breakdown electric field, which is difficult to obtain practical application. The lead-free ferroelectric thick film prepared by the colloidal gel method is limited by the critical thickness, its thickness does not exceed 2 microns, and the colloidal properties are unstable, so it is difficult to be applied in practice

Method used

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  • Lead-free ferroelectric thick film and manufacturing method thereof
  • Lead-free ferroelectric thick film and manufacturing method thereof
  • Lead-free ferroelectric thick film and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment b

[0091] Example b: Na 0.5 Bi 0.5 Ti 0.99 mn 0.01 o 3 Composite ferroelectric thick film and its preparation

[0092] Preparation of LaNiO 3 Bottom electrode, as follows:

[0093] Nickel acetate and lanthanum nitrate are measured at a molar ratio of 1:1, and deionized water and acetic acid are added to a beaker at a mass ratio of 1:5 to make the concentration reach 0.3-0.6 mol / L. Heat and stir at 100°C for 30-40min with a constant temperature magnetic stirrer;

[0094] The solution was cooled to room temperature, and formamide was added to the solution at a molar ratio of 1:25 to obtain a stable colloid;

[0095] Filter with four layers of medium-speed quantitative filter paper to obtain LaNiO 3 colloid;

[0096] Clean the substrate according to the cleaning process, wipe it clean with alcohol cotton, dry it with an ear ball, and drop 2-3 drops of LaNiO with a dropper 3 The colloid is placed on the substrate, and the glue is shaken by an adjustable glue machine, the se...

Embodiment c

[0109] Example c: Na 0.5 Bi 0.5 Ti 0.97 mn 0.03 o 3 Composite ferroelectric thick film and its preparation

[0110] Preparation of LaNiO 3 Bottom electrode, as follows:

[0111] Nickel acetate and lanthanum nitrate are measured at a molar ratio of 1:1, and deionized water and acetic acid are added to a beaker at a mass ratio of 1:5 to make the concentration reach 0.3-0.6 mol / L. Heat and stir at 100°C for 30-40min with a constant temperature magnetic stirrer;

[0112] The solution was cooled to room temperature, and formamide was added to the solution at a molar ratio of 1:25 to obtain a stable colloid;

[0113] Filter with four layers of medium-speed quantitative filter paper to obtain LaNiO 3 colloid;

[0114] Clean the substrate according to the cleaning process, wipe it clean with alcohol cotton, dry it with an ear ball, and drop 2-3 drops of LaNiO with a dropper 3 The colloid is placed on the substrate, and the glue is shaken by an adjustable glue machine, the se...

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Abstract

The invention belongs to the technical field of electronic functional material and devices, and provides a leadless ferroelectric thick film. The leadless ferroelectric thick film comprises material of which the general chemical formula is Na<0.5>Bi<0.5>Ti<1-x>Mn<x>O<3>. Doping of Mn is performed so that leakage current can be reduced, energy storage density can be enhanced, crystal growth orientation is facilitated, and thus crystal phase is converted into tetragonal or pseudo cubic phase from rhombohedral phase unfavorable for energy storage. The weak ferroelectricity of the Na<0.5>Bi<0.5>Ti<1-x>Mn<x>O<3> ferroelectric thick film is converted into long-range orderly ferroelectric phase under the effect of an external electric field, and a higher polarization difference value can be obtained so that increasing of energy storage density and enhancing of energy storage efficiency are facilitated. According to the leadless ferroelectric thick film, the energy storage density, the energy storage efficiency and stability can be enhanced so as to be favorable for development and application of a high-power high-capacity storage capacitor device.

Description

technical field [0001] The invention belongs to the technical field of electronic functional materials and devices, and in particular relates to a lead-free ferroelectric thick film and a preparation method thereof. Background technique [0002] Ferroelectric material is a kind of energy storage material with excellent dielectric properties. It has been widely studied by researchers from various countries and its application has been realized. However, in the process of preparation or application of ferroelectric materials, lead-based materials are usually required. However, lead-based materials cause serious harm to the ecological environment and human health in the process of preparation, use and disposal. Therefore, the development of lead-free ferroelectric materials is one of the urgent tasks related to the sustainable development of electronic technology in my country. Sodium bismuth titanate Na 0.5 Bi 0.5 TiO 3 (abbreviated as NBT) is a type of perovskite-type fer...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01G4/06H01G4/08C04B35/475C04B35/622
CPCC04B35/475C04B35/622H01G4/06H01G4/08
Inventor 郝喜红王佳恒李晓伟张奇伟孙宁宁安胜利
Owner INNER MONGOLIA UNIV OF SCI & TECH
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