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A bismuth sodium titanate-based 0-3 composite ferroelectric thick film and its preparation method and application

A sodium bismuth titanate-based, ferroelectric thick film technology is applied in the field of electronic functional materials and devices to achieve the effects of improving practical application value, increasing thickness, and improving energy storage efficiency

Active Publication Date: 2017-03-08
INNER MONGOLIA UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there is no report on the application of bismuth sodium titanate-potassium sodium niobate-strontium titanate-based lead-free 0-3 composite piezoelectric ferroelectric thick film for high-power and large-capacity storage capacitors.

Method used

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  • A bismuth sodium titanate-based 0-3 composite ferroelectric thick film and its preparation method and application
  • A bismuth sodium titanate-based 0-3 composite ferroelectric thick film and its preparation method and application
  • A bismuth sodium titanate-based 0-3 composite ferroelectric thick film and its preparation method and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment a

[0035] Embodiment a: (0.95Na 0.5 Bi 0.5 TiO 3 -0.05SrTiO 3 )-0.5(K 0.5 Na 0.5 )NbO 3 Composite ferroelectric thick film and its preparation

[0036] (1)(K 0.5 Na 0.5 )NbO 3 Powder preparation

[0037] 1) with Na 2 CO 3 , Nb 2 o 5 and K 2 CO 3 as raw material, according to (K 0.5 Na 0.5 )NbO 3 The stoichiometric ratio ingredients are dried after ball milling for 24 hours;

[0038] 2) Put the powder obtained in step 1) into a crucible, raise the temperature to 1000°C at a heating rate of 1°C-5°C / min, and hold the temperature for 4 hours;

[0039] 3) ball milling the powder obtained in step 2) for 24 hours again;

[0040] 4) The powder obtained in step 3) is centrifuged at a rotation speed of 500-700 r / min for 2 minutes.

[0041] (2) 0.95Na 0.5 Bi 0.5 T-0.05SrTiO 3 Colloid preparation

[0042] Dissolve sodium acetate, bismuth nitrate, strontium acetate and tetra-n-butyl titanate in ethylene glycol methyl ether, add chelating agent acetylacetone, drop into...

Embodiment b

[0048] Embodiment b: (0.95Na 0.5 Bi 0.5 TiO 3 -0.05SrTiO 3 )-0.8(K 0.5 Na 0.5 )NbO 3 Composite ferroelectric thick film and its preparation

[0049] (1)(K 0.5 Na 0.5 )NbO 3 Powder preparation

[0050] 1) with Na 2 CO 3 , Nb 2 o 5 and K 2 CO 3 as raw material, according to (K 0.5 Na 0.5 )NbO 3 The stoichiometric ratio ingredients are dried after ball milling for 24 hours;

[0051] 2) Put the powder obtained in step 1) into a crucible, raise the temperature to 1200°C at a heating rate of 1°C-5°C / min, and hold the temperature for 4 hours;

[0052] 3) ball milling the powder obtained in step 2) for 24 hours again;

[0053] 4) The powder obtained in step 3) is centrifuged at a rotation speed of 500-700 r / min for 2 minutes.

[0054] (2)(0.95Na 0.5 Bi 0.5 TiO 3 -0.05SrTiO 3 ) preparation of colloid

[0055] Dissolve sodium acetate, bismuth nitrate, strontium acetate and tetra-n-butyl titanate in ethylene glycol methyl ether, add chelating agent acetylacetone...

Embodiment c

[0061] Embodiment c: (0.95Na 0.5 Bi 0.5 TiO 3 -0.05SrTiO 3 )-1.5(K 0.5 Na 0.5 )NbO 3 Composite ferroelectric thick film and its preparation

[0062] (1)(K 0.5 Na 0.5 )NbO 3 Powder preparation

[0063] 1) with Na 2 CO 3 , Nb 2 o 5 and K 2 CO 3 as raw material, according to (K 0.5 Na 0.5 )NbO 3 The stoichiometric ratio ingredients are dried after ball milling for 24 hours;

[0064] 2) Put the powder obtained in step 1) into a crucible, raise the temperature to 900°C at a heating rate of 1°C-5°C / min, and hold the temperature for 6 hours;

[0065] 3) ball milling the powder obtained in step 2) for 24 hours again;

[0066] 4) The powder obtained in step 3) is centrifuged at a rotation speed of 500-700 r / min for 2 minutes.

[0067] (2) 0.95Na 0.5 Bi 0.5 T-0.05SrTiO 3 Colloid preparation

[0068] Dissolve sodium acetate, bismuth nitrate, strontium acetate and tetra-n-butyl titanate in ethylene glycol methyl ether, add chelating agent acetylacetone, drop into ...

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Abstract

The invention provides a sodium bismuth titanate-based 0-3 composite ferroelectric thick film and preparation method and application thereof. The chemical composition composite general chemical formula of the sodium bismuth titanate-based 0-3 composite ferroelectric thick film is (0.95 Na0.5Bi0.5TiO3-0.05SrTiO3)-x (K0.5Na0.5) NbO3, wherein the x is larger than or equal to 0 and smaller than or equal to 1.8, and the thick film is formed by composing the (K0.5Na0.5) NbO3 powder and 0.95 (Na0.5Bi0.5) TiO3-0.05SrTiO3 colloid 0-3. Compared with the prior art, the sodium bismuth titanate-based 0-3 composite ferroelectric thick film has the advantages of being high in degree of orientation, high in density, larger in energy storage density, higher in energy storage efficiency and capable of being widely applied to energy storage elements and the like.

Description

technical field [0001] The invention belongs to the technical field of electronic functional materials and devices, and more specifically relates to a bismuth sodium titanate-based composite ferroelectric thick film and a preparation method thereof, which are used for the development and application of high-power and large-capacity storage capacitor devices. [0002] technical background [0003] With the development of miniaturization and integration of electronic circuits, new requirements are put forward for electronic components. As one of the key components of microelectronic components, energy storage capacitors are not only required to have high energy storage density and stable energy storage performance, but also to be suitable for extreme environments such as high temperature and high pressure. Because of its excellent dielectric properties, ferroelectric dielectric materials have been extensively studied as an energy storage material by researchers from various cou...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/475C04B35/626
Inventor 郝喜红徐子盛张利文张奇伟杨吉春安胜利
Owner INNER MONGOLIA UNIV OF SCI & TECH
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