265results about How to "High success rate of preparation" patented technology

The invention discloses an array substrate, a display panel and a display device. The array substrate comprises an underlayer substrate, multiple scanning lines and multiple data lines. The scanning lines and the data lines are located on one side of the underlayer substrate. The scanning lines are arranged side by side in the first direction, the data lines are arranged side by side in the second direction, and multiple sub-pixels are defined by the scanning lines and the data lines in an insulating cross mode. The sub-pixels comprise thin film transistors, and each thin film transistor comprises an active layer, a grid, a source electrode and a drain electrode which are located on one side of the underlayer substrate. The active layers comprise channel regions, and the regions where the active layers and the grids are overlapped are the channel regions in the direction vertical to the array substrate. Each channel region comprises two opposite edges in the second direction, first included angles are formed between the stretching directions of the edges and the first direction, and the first included angles are larger than 0 degree and smaller than or equal to 40 degrees. The exposure stability of graphs in the thin film transistors can be improved, and the aperture ratio is increased to a certain degree.

A method for preparing rare earth barium copper oxide superconducting block material comprises the steps of executing calcining and grinding processes in turn after mixing the RE123 and RE211 in the mole ratio of 100: (20-35); pressing the ground powder into precursor bottom piece and precursor top piece respectively; putting the precursor top piece on top of the precursor bottom piece; putting seed crystal on the precursor top piece, then putting the precursor bottom piece on a zirconium oxide bead substrate; rising temperature for heating in a sealing container, and then cooling to prepare the rare earth barium copper oxide superconducting block material. The method can prepare the high temperature superconducting block material with high performance, large single domain structure and good growth orientation under the conditions that no impurity exists and crystal lattices match completely, thereby solving the key problems of the growth and application of the superconducting block material.

The invention provides a method for preparing special microbial preparations for homemade 'vegetable and fruit enzymes', products manufactured according to the method and application of the products. The microbial preparations include solid microbial preparations and liquid microbial preparations. A process for preparing the solid microbial preparations includes steps of preparing strains; domesticating and cultivating the strains; preparing materials for inoculants; preparing the microbial preparations. A process for preparing the liquid microbial preparations includes steps of preparing strains; domesticating and cultivating the strains; directly manufacturing the liquid microbial preparations. The method, the products and the application have the advantages that the diversified probiotics strains are domesticated and cultivated to obtain the special microbial preparations for the homemade 'fruit and vegetable enzymes', accordingly, the 'fruit and vegetable enzymes' can be conveniently manufactured at home, the manufacturing success rate can be increased, opportunity of breeding of harmful germs can be reduced as compared with natural fermentation, the sugar contents can be reduced, the fermentation time can be greatly shortened, and the special microbial preparations and the products contain large quantities of effective bioactive components.

The invention discloses a nanometer layered horizontal homogeneous PN diode and fabrication method and application thereof. A p-type transition metal chalcogenide film and an n-type transition metal chalcogenide film both are arranged on an upper surface of a dielectric layer and are transversely connected, an electrode layer is longitudinally connected or transversely connected with the p-type transition metal chalcogenide film and the n-type transition metal chalcogenide film, and the p-type transition metal chalcogenide film and the n-type transition metal chalcogenide film comprises the same transition metal chalcogenide. The fabrication method is simple, high-efficiency and low-damage p-type doping of the transition metal chalcogenide is achieved through oxygen plasma by magnetron sputtering, effective and controllable doping is achieved, and the obtained diode is used for a photoelectric detector and has more rapid optical response and higher detection rate.

The invention relates to a high-performance copper alloy prepared by a casting method, and belongs to the field of copper alloys. The copper alloy comprises Cu, Cr, Zr and M, wherein the mass percentof the Cr is 0.1-5.0%, and the mass percent of the Zr is 0.1-5.0%; the M is composed of RE and at least two of Mg, Ag, B, Ga, Si, Li, Ti, Fe and Mn; the RE is selected from at least three of Ce, La, Yb, Pr, Nd and Sm; and the mass ratio of the M in the high-performance copper alloy is 0.05-0.5%. The high-performance copper alloy is subjected to casting to obtain an as-cast alloy ingot, and the as-cast alloy ingot is subjected to heat treatment and deformation treatment to obtain a finished product with excellent mechanical properties and electrical conductivity.

The invention discloses a refrigeration-free tunable semiconductor laser based on a multi-wavelength array. The refrigeration-free tunable semiconductor laser comprises a thermistor, a tunable laser array, a wave combining structure, an optical amplifier, an optical branching device, an optical detector and a main controller. According to the invention, when the laser is influenced by the externalenvironment temperature, the influence value caused by the external environment temperature is calculated, and the driving currents of the tunable laser array and the optical amplifier are respectively regulated and controlled according to the calculation result such that the purpose that the final output light is consistent with a theoretical light parameter is achieved. As no refrigeration equipment is adopted, the overall structure of the laser is greatly reduced, the preparation process is further simplified, and even a sealed packaging structure is not adopted such that the cost of a laser device is greatly reduced.

The invention provides a preparation method of an iron-based SmFeAsO<1-x>Fx superconducting wire, comprising the steps as follows: a: material preparation: the material is prepared according to the stoichiometry of the iron-based superconducting material SmFeAsO<1-x>Fx (wherein, x is not more than 0.35 and not less than 0.15, the raw materials such as SmAs, Fe, Fe2O3 and FeF3 are weighed, grinded, uniformly mixed, arranged into a Tantalum pipe, fully fixed and compacted; the two ends of the Tantalum pipe are sealed; b: wire preparation: the Tantalum pipe is sheathed into a copper pipe and rotatablely forged; subsequently, the wire with the diameter of 1.8-2.2mm is formed by pulling and drawing; c: burning: the wire is arranged in a quartz pipe and sealed in vacuum and then put into a sintering furnace; under the protection of inert gas, the temperature of the wire is increased to 1150-1170 DEG C at the speed of 100-150 DEG C/hour, the temperature is kept for 36-50 hours and the wire is cooled with the furnace. The method of the invention has the advantages of simple technology and facilitating industrial production, and the compactness, high purification, stable superconducting performance, high superconducting conversion temperature and high critical magnetic field of the prepared iron-based SmFeAsO<1-x>Fx superconducting wire.

The invention belongs to the technical field of graphene preparation and relates to a method for preparing single-layer graphene through a mechanical method. A specific technological process of the method comprises three steps of a hydroxylation process, a decontaminating process and a reduction process. The edge of natural flake graphite is processed in a carboxylation mode through a ball milling method to obtain initial carboxylation graphene powder, then pure carboxylation graphene powder with small iron content is obtained through the decontaminating process, and high-quality single-layer graphene is obtained through the thermal reduction process. The method avoids any strong oxidant and has high carboxylation degree, short ball milling time and high success rate; the decontaminating process is simple and effective; the reduction process avoids using reducing agents and is environmentally friendly; a main structure of a ball milling tank related to the hydroxylation process comprises a pressure meter, a gas exhaust valve, a tank body, a sealing cover and a stainless steel ball. The method has high preparation success rate, large yield, no pollution and low energy consumption and can achieve large-scale mechanical production through amplifying ball milling equipment.

The invention discloses an InGaN/GaN multi-quantum-well single-nano-pole LED device. The distance between an n-type GaN layer and a p-type GaN layer at the two ends of an InGaN/GaN multi-quantum-well nano-pole and the corresponding portions of a metal electrode film is smaller than or equal to 100 nm or the n-type GaN layer and the p-type GaN layer at the two ends of the InGaN/GaN multi-quantum-well nano-pole are in direct contact with the metal electrode film, a middle InxGa1-x/GaN quantum well active layer is isolated from the metal electrode film, and metal electrodes are secondarily deposited at the portions where the two ends of the InGaN/GaN multi-quantum-well nano-pole are in contact with the metal electrode film through a focused ion beam system to form ohmic contact. A method of the InGaN/GaN multi-quantum-well single-nano-pole LED device is mainly characterized in that ohmic contact of the nano-pole is formed through ultraviolet photoetching and focusing ion beam secondary depositing. By means of the method, the alignment accuracy between the electrodes and the nano-pole can be remarkably improved, the preparing success rate can be remarkably increased, multiple InGaN/GaN quantum wells are not damaged while the electrodes are prepared, good metal semiconductor contact is achieved accordingly, the electric injection current density is improved, and therefore luminance is improved. The method is suitable for preparing a single-nano-pole InGaN/GaN light emitting diode, and is particularly suitable for nanometer devices with the sizes smaller than the limitation of ultraviolet photoetching.

The invention relates to carbon nanometer tube cathode filed-emissive plane luminous display and its making craft, which comprises a sealed vacuum chamber formed by an anode glass plane, a cathode glass plane and around glass frame, wherein the anode glass plane arranges an anode conducing bar and a luminescent powder layer which is printed on the anode conducing bar; the cathode glass plane arranges an cathode conducing bar, an insulating isolate layer and a printed carbon nanometer tube cathode, a control grid bar used to control the electron ejection and a belong gettering unit; it arranges the supporting wall structure which can provide the supporting function to the glass plane and avert the secondary electron ejection of the supporting wall structure.

The invention provides a manufacturing method of a laser holographic digital lens die. The manufacturing method is used for solving the technical problems of complicated light paths and many diffraction components of the prior art. The manufacturing method includes steps of firstly, inputting holographic patterns to a computer; secondly, encoding the holographic patterns into combination of photoetching stripes by the computer according to simulation optical encoding rules; thirdly, transmitting the combination of photoetching stripes to a dot matrix photoetching machine by the computer; fourthly, outputting the combination of photoetching stripes by the dot matrix photoetching machine to form a laser holographic digital lens die, wherein the photoetching stripes are combined modulated microstructure stripes of different frequencies and angles. The laser holographic digital lens die in the embodiment has the advantages that the process is simplified, and die manufacturing success rate is increased.

The invention discloses a concrete pipe and a manufacturing process thereof. According to the technical scheme, the concrete pipe comprises a pipe body, and a socket end and a spigot end are arrangedon the pipe body. The pipe body is composed of a reinforcing steel bar keel and a concrete layer covering the reinforcing steel bar keel. The peripheral face of the spigot end of the pipe body is fixedly connected with a water stopping pipe. The concrete pipe and the manufacturing process thereof have the advantage of improving the waterproof performance of an inserting opening of the concrete pipe.

The invention provides a method for realizing co-curing of an L-shaped reinforcing rib and a C-shaped frame-structure composite part through a high-strength soft tool. The method has the beneficial technical effects that first, co-curing of the L-shaped reinforcing rib and the C-shaped frame-structure composite part is achieved through the cooperation of a soft mold and a metal forming tool, it isguaranteed that the key parameters, such as the profile tolerance, thickness and the L-shaped axis, of the part all meet the high civil aviation manufacturing standard, and the problem of aging caused by repeated curing of materials is solved; second, in the forming process, pressure is uniformly and accurately applied to all positions of the L-shaped vertical rib and a C-shaped frame, and the temperature rise rates of all the portions of the part are kept consistent, so that the problem that the thickness of an R-angle area of the part is out of tolerance is solved; and third, non-cured preforms of the L-shaped vertical rib and a C-shaped web are combined through the soft tool, so that internal stress caused by combination after curing of an assembly is avoided, and the problems of out-of-tolerance profiles and internal non-destructive defects caused by forced assembly in the prior art are solved.

This invention relates to a panel display with an accurate location trap cathode array structure and its process method, in which, said display includes a sealed vacuum cavity composed of a cathode panel, an anode panel and surrounding glasses, a photoetched anode conduction layer on the anode panel and a fluorescence powder layer on the anode conduction layer, a supporting wall structure and getters, an accurate location trap cathode array structure prepared on the cathode panel capable of determining the growing position of the carbon nm tube cathode and controlling its location, length and number and integrating with the control grating to reduce distances between them and avoid short circuit.

The invention relates to a method for making a human pelvic inflammation simulating animal model. The method comprises the following steps of: selecting a muridae animal with no genital tract disease; and inoculating enterobacteria, staphylococcus or mycotoruloides into an animal vagina under a sterile condition for 1-8 weeks, 1-7 times every week. The method has the advantages of: high model making success rate up to 100 percent, independence of an immune-depressant, remarkable increase in secreta at a vaginal orifice, observation of bacteria through vaginal smear microscopy, observation of vacuole at an ostium uteri, metremia abscess and a large quantity of inflammatory cells in a fallopian tube through section examination of tissues and organs and remarkable increase in neutrophilic granulocytes as proved by blood examination. The method is easy to operate and grasp, has readily-available materials, has no special technical requirement for a user, is accordant with the clinical natural abiogenesis process of pelvic inflammation, and is suitable for researching the occurrence and the development of pelvic inflammation and the mechanism thereof and screening relevant medicaments.