InGaN/GaN multi-quantum-well single-nano-pole LED device and manufacturing method thereof

Abstract

The invention discloses an InGaN / GaN multi-quantum-well single-nano-pole LED device. The distance between an n-type GaN layer and a p-type GaN layer at the two ends of an InGaN / GaN multi-quantum-well nano-pole and the corresponding portions of a metal electrode film is smaller than or equal to 100 nm or the n-type GaN layer and the p-type GaN layer at the two ends of the InGaN / GaN multi-quantum-well nano-pole are in direct contact with the metal electrode film, a middle InxGa1-x / GaN quantum well active layer is isolated from the metal electrode film, and metal electrodes are secondarily deposited at the portions where the two ends of the InGaN / GaN multi-quantum-well nano-pole are in contact with the metal electrode film through a focused ion beam system to form ohmic contact. A method of the InGaN / GaN multi-quantum-well single-nano-pole LED device is mainly characterized in that ohmic contact of the nano-pole is formed through ultraviolet photoetching and focusing ion beam secondary depositing. By means of the method, the alignment accuracy between the electrodes and the nano-pole can be remarkably improved, the preparing success rate can be remarkably increased, multiple InGaN / GaN quantum wells are not damaged while the electrodes are prepared, good metal semiconductor contact is achieved accordingly, the electric injection current density is improved, and therefore luminance is improved. The method is suitable for preparing a single-nano-pole InGaN / GaN light emitting diode, and is particularly suitable for nanometer devices with the sizes smaller than the limitation of ultraviolet photoetching.

Description

technical field [0001] The invention relates to an InGaN / GaN multi-quantum well single nanocolumn LED device and a preparation method thereof, belonging to the field of semiconductor lighting. Background technique [0002] In recent years, low-dimensional quantum structures such as semiconductor nanowires / pillars and nanodots have attracted widespread attention from academic and industrial circles at home and abroad, hoping to exhibit special properties in mechanics, biochemistry, electromagnetism and optoelectronics, and in microscopic systems. Explore the carrier transport mechanism. Due to its high geometric confinement effect and novel functionality, nanoscale heterojunctions are developing rapidly in the field of optoelectronic devices, such as LED light-emitting diodes, lasers, solar cells, detectors, etc. Sub-wavelength light-emitting devices and high-polarization light sources are key factors in the development of light displays, especially in the development of hig...

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Problems solved by technology

[0005] Secondly, how to realize the electrical injection of nano-devices is another difficulty of this subject, which not only restricts the further research and exploration of its performance, but also hinders the development and application of nano-devices

At present, the patent document CN103077888A discloses a method for preparing electrodes on a single nanowire based on the electron beam exposure process. Nanowires are easy to peel off during peeling and other steps, so the yield is relatively low

The journal AppliedPhysicsLetter reported the preparation of InGaN / GaN multi-quantum well single nanocolumn LED devices by ultraviolet lithography, which showed good luminous characteristics, but the limitation of this single ultraviolet lithography technology lies in the diffraction limit, for less than 1 micron long single nanowire, this processing technology cannot achieve

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