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Bidirectional high-voltage ESD protection device of full-symmetric LDMOS triggered SCR structure

A device, high-voltage technology, applied in the field of electrostatic discharge protection and anti-surge, to achieve the effect of enhancing ESD robustness, increasing maintenance voltage, and improving discharge efficiency

Active Publication Date: 2020-03-13
JIANGNAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Aiming at the problem of high voltage bidirectional ESD protection

Method used

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  • Bidirectional high-voltage ESD protection device of full-symmetric LDMOS triggered SCR structure
  • Bidirectional high-voltage ESD protection device of full-symmetric LDMOS triggered SCR structure
  • Bidirectional high-voltage ESD protection device of full-symmetric LDMOS triggered SCR structure

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Embodiment 1

[0030] This embodiment provides a bidirectional high-voltage ESD protection device with a fully symmetrical LDMOS trigger SCR structure. By embedding two LDMOSs, an auxiliary trigger SCR current path of an on-state NLDMOS and an off-state NLDMOS connected in series is formed, wherein the field oxygen isolation region can improve The withstand voltage capability of the device enables the device to meet the ESD protection requirements of the high-voltage power supply domain, and the SCR current conduction path can enhance the ESD robustness of the device and improve the discharge efficiency per unit area of ​​the device. The P+ injection region embedded in the drain of NLDMOS reduces the base transition carrier concentration in the parasitic SCR structure, which can increase the sustain voltage of the device. The completely symmetrical device structure enables the device to realize bidirectional ESD protection or anti-surge function.

[0031] figure 1 Shown is a schematic cross...

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Abstract

The invention discloses a bidirectional high-voltage ESD protection device of a full-symmetric LDMOS triggered SCR structure, and belongs to the field of electrostatic discharge protection and surge resistance of integrated circuits. The protection device is mainly composed of a P substrate, a deep N well, a first P well, an N well, a second P well, a first P + injection region, a first N + injection region, a first polysilicon gate, a first thin gate oxide layer, a first field oxide isolation region, a second P + injection region, a second field oxide isolation region, a second polysilicon gate, a second thin gate oxide layer, a second N + injection region and a third P + injection region. The two NLDMOSs are embedded to form an auxiliary trigger SCR current path in which the on-state NLDMOS and the off-state NLDMOS are connected in series. The voltage withstanding capability of the device is improved, so that the device meets the ESD protection requirement of a high-voltage power supply domain, the ESD robustness of the device is enhanced, the discharge efficiency of the device in unit area is improved, the carrier concentration of a base region in a parasitic SCR structure is reduced, and the maintaining voltage of the device is improved.

Description

technical field [0001] The invention relates to a bidirectional ESD or surge protection method, in particular to a bidirectional high voltage ESD protection device with a fully symmetrical LDMOS trigger SCR structure, which belongs to the field of electrostatic discharge protection and anti-surge of integrated circuits. Background technique [0002] With the wide application of power semiconductors in industries such as power management, drive circuits, and automotive electronics, high-voltage integrated circuits occupy an important position in the semiconductor industry. Since the working environment of high-voltage chips is relatively complex and harsh, high-voltage chips must add more complex process levels to meet the high operating voltage requirements of the circuit system. However, with the complexity of the chip process level and layout, the parasitic effect of the device gradually increases, and the electrostatic discharge capability decreases. Therefore, with the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/02
CPCH01L27/0262H01L27/0266H01L27/0296
Inventor 顾晓峰朱玲梁海莲
Owner JIANGNAN UNIV
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