Bidirectional high-voltage ESD protection device of full-symmetric LDMOS triggered SCR structure

Abstract

The invention discloses a bidirectional high-voltage ESD protection device of a full-symmetric LDMOS triggered SCR structure, and belongs to the field of electrostatic discharge protection and surge resistance of integrated circuits. The protection device is mainly composed of a P substrate, a deep N well, a first P well, an N well, a second P well, a first P + injection region, a first N + injection region, a first polysilicon gate, a first thin gate oxide layer, a first field oxide isolation region, a second P + injection region, a second field oxide isolation region, a second polysilicon gate, a second thin gate oxide layer, a second N + injection region and a third P + injection region. The two NLDMOSs are embedded to form an auxiliary trigger SCR current path in which the on-state NLDMOS and the off-state NLDMOS are connected in series. The voltage withstanding capability of the device is improved, so that the device meets the ESD protection requirement of a high-voltage power supply domain, the ESD robustness of the device is enhanced, the discharge efficiency of the device in unit area is improved, the carrier concentration of a base region in a parasitic SCR structure is reduced, and the maintaining voltage of the device is improved.

Description

technical field [0001] The invention relates to a bidirectional ESD or surge protection method, in particular to a bidirectional high voltage ESD protection device with a fully symmetrical LDMOS trigger SCR structure, which belongs to the field of electrostatic discharge protection and anti-surge of integrated circuits. Background technique [0002] With the wide application of power semiconductors in industries such as power management, drive circuits, and automotive electronics, high-voltage integrated circuits occupy an important position in the semiconductor industry. Since the working environment of high-voltage chips is relatively complex and harsh, high-voltage chips must add more complex process levels to meet the high operating voltage requirements of the circuit system. However, with the complexity of the chip process level and layout, the parasitic effect of the device gradually increases, and the electrostatic discharge capability decreases. Therefore, with the ...

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Problems solved by technology

[0005] Aiming at the problem of high voltage bidirectional ESD protection

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