ESD protection device of IGBT structure and with high maintaining voltage
A technology for ESD protection and high sustaining voltage, applied in the direction of electric solid-state devices, electrical components, semiconductor devices, etc., can solve problems such as low sustaining voltage and insufficient anti-latch-up ability, achieve high sustaining voltage, enhance ESD robustness, The effect of increasing the secondary failure current
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[0024] Below in conjunction with accompanying drawing and specific embodiment the present invention will be described in further detail:
[0025] An example of the present invention designs an ESD protection device with an IGBT structure with a high sustain voltage, which not only makes full use of the strong current handling capability of the IGBT device, but also enhances the ESD robustness of the device. The increase of the P+ layout structure and the special metal connection can increase the maintenance voltage of the device. By adjusting the key layout size, the device can meet the high-voltage ESD protection in power integrated circuit products with different needs, and no latch-up effect will occur.
[0026] Such as figure 1 The cross-sectional view of the internal structure of the example device of the present invention is shown, specifically an ESD protection device with a high sustain voltage IGBT structure, with a PNPN structure and two ESD current discharge paths i...
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