Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

A scr device with high sustain voltage embedded gdpmos

A high sustaining voltage and sustaining voltage technology, applied in the direction of electric solid devices, electrical components, semiconductor devices, etc., can solve the problems of insufficient latch-up resistance, low triggering, high sustaining voltage, etc., to improve the secondary failure current, high The effect of maintaining voltage and high protection efficiency

Active Publication Date: 2017-10-13
JIANGNAN UNIV
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Aiming at problems such as insufficient anti-latch-up ability generally existing in the ESD protection device of existing SCR structure, the example of the present invention designs a kind of ESD protection device with the new SCR structure of high holding voltage, has not only made full use of the strong SCR device The characteristics of robustness, and the increase of the layout level of the thin gate oxide layer covered by P+, polysilicon gate and polysilicon gate in the device, make the device form an embedded GDPMOS structure, under the action of ESD pulse, through a comprehensive trade-off And reasonable control of the layout parameters of the channel length of the PMOS transistor can obtain low trigger, high sustain voltage, and strong robustness ESD protection devices suitable for high-voltage IC circuits

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A scr device with high sustain voltage embedded gdpmos
  • A scr device with high sustain voltage embedded gdpmos
  • A scr device with high sustain voltage embedded gdpmos

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] Below in conjunction with accompanying drawing and specific embodiment the present invention will be described in further detail:

[0024] An example of the present invention designs an SCR device with a high sustaining voltage embedded GDPMOS, which not only makes full use of the characteristics of the SCR device's low on-resistance and large current discharge capability. By increasing the layout structure design and forming an embedded GDPMOS structure at the anode of the device, the sustaining voltage of the device can be increased, and the device can be used in integrated circuit products with different needs by adjusting the key layout size to avoid the latch-up effect .

[0025] Such as figure 1 The cross-sectional view of the internal structure of the example device of the present invention is shown, specifically a SCR device with a high sustain voltage embedded GDPMOS, and an SCR current discharge path with an embedded GDPMOS structure to enhance the ESD robust...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

An SCR device with high sustain voltage embedded GDPMOS for ESD protection circuits of high voltage on-chip ICs. Mainly composed of P substrate, N well, P well, first N+ implantation region, first P+ implantation region, second P+ implantation region, second N+ implantation region, third N+ implantation region, third P+ implantation region, metal anode , metal cathode, polysilicon gate, thin gate oxide layer and several field oxygen isolation regions. Under the action of high-voltage ESD pulses, the SCR device with high sustain voltage embedded GDPMOS, on the one hand, forms a parasitic SCR current discharge by the first P+ injection region, N well, second N+ injection region, P well, and third N+ injection region. path, improve the failure current of the device, and enhance the ESD robustness of the device; on the other hand, the PMOS transistor formed by the first P+ implantation region, the polysilicon gate, the thin gate oxide layer and the second P+ implantation region is connected to a high potential through the gate A GDPMOS tube is formed to suppress the strong hysteresis of the SCR device, increase the sustain voltage of the device, and enhance the anti-latch-up ability of the device.

Description

technical field [0001] The invention belongs to the field of electrostatic discharge protection of integrated circuits, relates to an ESD protection device, in particular to an ESD protection device with an SCR structure with high sustain voltage, which can be used to improve the reliability of IC high-voltage ESD protection on a chip. Background technique [0002] With the rapid development of integration technology, electronic products are increasingly miniaturized. While improving the performance and integration of integrated structures, the internal structure of integrated circuits is more likely to be damaged when ESD strikes, and the reliability problems caused by ESD are becoming more and more serious. draw people's attention. According to the investigation of various factors that cause the failure of integrated circuit products, it is found that the economic losses caused by ESD in the semiconductor industry are as high as billions of dollars every year. Therefore, ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/02H01L29/74
Inventor 顾晓峰毕秀文梁海莲黄龙
Owner JIANGNAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products