A high voltage esd protection device with ldmos‑scr interdigitated structure
A LDMOS-SCR, ESD protection technology, applied in the direction of electric solid state devices, semiconductor devices, electrical components, etc., to achieve the effect of improving the maintenance voltage and ESD robustness, realizing ESD protection requirements, and strong current discharge capability
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[0026] Below in conjunction with accompanying drawing and specific embodiment the present invention will be described in further detail:
[0027] The present invention proposes a high-voltage ESD protection device with an LDMOS-SCR-like interdigitated structure. Due to the special design of the internal structure and the reasonable control of key characteristic parameters, the device in the embodiment of the present invention has an ESD protection device with an SCR structure. The advantages of fast, small on-resistance, and large secondary breakdown current; and the parasitic NPN tube controls the electron emission rate of the floating LDMOS structure, and adjusts the maintenance voltage of the device. Also, by introducing the LDMOS-SCR interdigitated structure, the on-resistance of the device is reduced, and high-performance ESD protection with strong ESD robustness is realized. In addition, it is also beneficial to expand the application range of the device of the embodimen...
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