The present invention provides a method for fabricating a spin-
orbit torque wiring layer comprising: a first ferromagnetic layer having a variable
magnetization direction; and a spin-
orbit torque wiring layer adjacent to the first ferromagnetic layer, the spin-
orbit torque wiring layer being made of one or more elements, at least one of which has a crystalline structure, and where the dimensions of the lattice constants of the crystalline structure are represented by a, b, and c, the internal coordinates of atoms occupying a unit
cell are (0,0,0), (0.5,0.5,0), (0.25,0.75,0.25), A
spin current magnetization rotating element having
layers of (0.75, 0.25, 0.25), (0, 0.5, 0.5), (0.5, 0, 0.5), (0.75, 0.75, 0.75), and (0.25, 0.25, 0.75), in which the ab plane is stacked to have a four-fold spiral structure along the c axis, the angle (γ) between the a axis and the b axis is in the range of 60°≦γ≦120°, and the ratio of b to a (b / a) is in the range of 0.2≦b / a≦1.0.