High-voltage electrostatic protection device and equivalent circuit

A technology for protecting devices and high-voltage static electricity, applied in the direction of electric solid devices, circuits, electrical components, etc., can solve problems such as inability to effectively protect high-voltage devices, and achieve the effects of improving protection capabilities, reducing trigger voltage, and optimizing trigger voltage

Active Publication Date: 2019-01-04
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The high-voltage electrostatic protection device of the present invention adds a trigger circuit to the drain of the existing high-voltage P-LDMOS, which can effectively reduce the trigger voltage of the parasitic SCR structure in the high-voltage P-LDMOS, and the triggering of the SCR structure of the P-LDMOS The voltage has been effectively optimized, and the protection capability has been greatly improved, which solves the problem that it cannot effectively protect the protected internal high-voltage devices

Method used

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  • High-voltage electrostatic protection device and equivalent circuit
  • High-voltage electrostatic protection device and equivalent circuit
  • High-voltage electrostatic protection device and equivalent circuit

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Embodiment Construction

[0014] combine figure 2 As shown, in the following embodiments, the improved high-voltage electrostatic protection device is implemented in the following manner: the high-voltage P-LDMOS is placed in a buried layer above a silicon substrate as a whole. The high voltage mentioned in the present invention refers to a voltage ranging from 12V to 120V.

[0015] Compared figure 1 , figure 2 It can be seen that the improved high-voltage electrostatic protection device has a trigger circuit added to the drain of the existing high-voltage P-LDMOS. When the circuit is working normally, the trigger circuit is turned off. When there is static electricity , the trigger circuit is turned on, so that the parasitic SCR structure in the high-voltage P-LDMOS is triggered and turned on to discharge the electrostatic charge.

[0016] The trigger circuit can be composed of a resistor and a high voltage resistant capacitor. The structure used for the trigger circuit is not limited to the abo...

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PUM

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Abstract

The invention discloses a high-voltage electrostatic protection device, a trigger circuit is arranged at the drain end of a high-voltage P-LDMOS, when the circuit is working normally, the trigger circuit is in an off state, and when static electricity comes, the trigger circuit is in an on state, so that the parasitic SCR structure in the high-voltage P-LDMOS is triggered to be turned on to discharge electrostatic charge. The invention discloses an equivalent circuit of the high-voltage electrostatic protection device. The invention can effectively protect the internal high-voltage device.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuits, in particular to a high-voltage electrostatic protection device. The present invention also relates to an equivalent circuit of the high-voltage electrostatic protection device. Background technique [0002] There are generally two solutions for electrostatic protection of high-voltage circuits: one of them is to adopt an external protection circuit, such as figure 1 As shown, this requires the external protection circuit to be turned on faster than the internal protected circuit when static electricity comes, so that the protection effect can be achieved. Conventional high-voltage ESD (electrostatic discharge) devices generally use LDMOS [laterally diffused MOS (metal oxide semiconductor) transistors], and LDMOS itself has weak ESD capabilities. In order to improve ESD capability and design flexibility, some deformations are usually made based on LDMOS, such as the drain termin...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/02
CPCH01L27/0262H01L27/0288
Inventor 苏庆
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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