20 results about "Wideband amplifiers" patented technology

This invention provides a design method for a high-order matching network applied to an ultra-wideband amplifier. It involves deriving equivalent modules for the single-port preamplifier input and output stages; determining the internal structure of the high-order matching network and the transformer coupling coefficient; analyzing and obtaining the mismatch coefficient of the high-order matching network; and transforming the calculation of the load resonator quality factor into solving the constraint conditions based on the constraints between the transformer coupling coefficient, the high-order matching network mismatch coefficient, and the load resonator quality factor. The source resonator quality factor is then obtained based on the mismatch relationship between the load resonator quality factor and the high-order matching network. Finally, the parameter values ​​of the internal components of the high-order matching network are determined, resulting in the final designed high-order matching network. Compared to existing technologies, this invention achieves impedance matching between the source and load over an ultra-wideband range and enables high-gain flatness amplification within the ultra-wideband range.

The invention belongs to the field of broadband power amplifiers, and particularly relates to a broadband impedance converter. The circuit comprises an input impedance converter, an input matching unit, a driving power amplifier, an inter-stage matching unit, a final-stage power amplifier and an output impedance converter. According to the invention, based on the HBT technology, coupling among multiple layers of metal is utilized, so that an ultra-wideband impedance converter is realized; the broadband impedance transformer can provide a required load line for the power amplifier in a very wide frequency band range; the broadband impedance converter can simplify the input matching of the ultra-wideband power amplifier and reduce the design complexity. Based on the impedance transformer and the ultra-wideband power amplifier structure, the designed wideband amplifier is high in bandwidth, high in efficiency, simple in design and small in area.

The invention discloses a broadband amplifier circuit with adjustable gain and a tube core protection function, and belongs to the field of broadband amplifiers, a plurality of cascade amplification units are designed based on a Cascode structure, a bias network is formed by adjusting tubes TB, RB1 and RB2, and VDD bias voltage stabilization and tube core overvoltage protection are realized by matching with clamping diodes D1, D2 and D3. And the conduction degree of a T2 tube in the Cascode unit is changed by adjusting the voltage of a specific node VG2, so that the gain of the amplifier is flexibly regulated and controlled. A micro-strip transmission line is adopted for input and output to construct a distributed architecture, signals are injected into an amplification unit through an input matching network and are synthesized and output on an output transmission line after being amplified, and efficient amplification of broadband signals is achieved. The broadband amplifier solves the problems that gain adjustment of a traditional broadband amplifier is limited and a tube core is prone to damage, and has high reliability and practicability in the fields of radio frequency communication, radar detection and the like.

The application discloses a low-barret error, high-linearity and low-noise wideband amplifier, which comprises an input end, a common-source amplifier, a differential current balancer, an OTA, a load circuit and an enhanced source follower; an input signal enters from a P1 port, enters a first common-source amplifier, one-way signal enters the differential current balancer, and another way signal enters a second common-source amplifier and enters the differential current balancer; two-way signals are transmitted to P5 and P6 ports to output differential signals; the OTA detects the common-mode level of P5 and P6, feeds back the bias level of the load circuit to adjust g ds The application realizes high linearity by compensating the residual offset of the distortion components of the source follower and the main common-source amplifier, and reduces the barret error through a triple barret error correction technology. The application realizes the performance of low barret error, high linearity and low noise in the working frequency range of 0.2GHz to 6GHz.

The invention discloses an ultra-wideband high-harmonic suppression low-noise amplifier circuit, and relates to the technical field of integrated circuits. The circuit comprises an input predistortion low-noise amplifier, a waveform correction unit, an output high-linearity amplifier and a filtering unit which are connected in sequence. Through pre-distortion processing and waveform correction, secondary harmonic components generated by the two stages of inverting amplifiers are equivalent in amplitude, the phase difference is 180 degrees, mutual harmonic cancellation is achieved, high-frequency harmonics are filtered out through the filtering unit, and the problem that in-band secondary harmonics in an ultra-wideband amplifier are difficult to restrain is effectively solved. The amplifier has the advantages of ultra wide band, low noise, high gain, high linearity and high harmonic suppression ratio.

This invention provides a reconfigurable transceiver component and its operating method. The reconfigurable transceiver component includes a transmitting circuit, a receiving circuit, and two circulators. The transmitting circuit includes three single-pole double-throw switches, two low-power bandpass dielectric filters, two bridge circuits, two ultra-wideband amplifiers, and two high-power bandpass dielectric filters. The receiving circuit includes two single-pole double-throw switches, two low-power bandpass dielectric filters, two wideband LNAs, and a phase-shifting attenuation circuit. This invention is suitable for enabling the simultaneous operation of the transmitting and receiving circuits of the transceiver component. Furthermore, through digital circuit control, various low-power and high-power filtering networks can be selected to diversify the operating modes of the transceiver component, improve its reconfigurability, and shorten the development cycle.

The application discloses a kind of wideband amplifier circuits with gain adjustable and with die protection function, belong to wideband amplifier field, based on Cascode structure design multiple cascade amplification units, by adjusting tube TB and RB1, RB2 Bias network is formed, cooperate D1, D2, D3 Zener diode, realize VDD bias voltage stability and die overvoltage protection.Adjusting specific node VG2 Voltage changes T2 in Cascode unit The degree of conduction of tube, realize amplifier gain flexible control.Input and output are constructed by microstrip transmission line Distribution architecture, signal is injected into amplification unit through input matching network, and the output is synthesized after amplification in output transmission line, and high-efficiency amplification of wideband signal is achieved.The application solves the gain adjustment limitation of traditional wideband amplifier and the problem of easy damage of die, and has high reliability and practicality in the field of radio frequency communication, radar detection and the like.

The embodiment of the present application discloses a kind of wideband amplifier and analog filter, wherein, wideband amplifier, it is arranged in analog filter, analog filter includes multiple bandwidth modes, wideband amplifier includes: gain circuit;Gain circuit includes: first amplification subcircuit and second amplification subcircuit;First amplification subcircuit is used to amplify the input signal and process;Second amplification subcircuit is used to reconfigure according to the bandwidth mode of analog filter, also for amplifying the input signal after amplification processing.The technical scheme provided by the embodiment of the present application can configure amplifier when filter is in different bandwidth mode, while guaranteeing the performance of filter, also realizes power consumption optimization.

The application discloses a high-linearity ultra-wideband amplifier, wherein an input end of an input matching network serves as an input end of the amplifier, an output end of the input matching network is connected with an input end of an ultra-wideband amplification network, an output end of the ultra-wideband amplification network is connected with an input end of a J-class amplification output matching network, and an output end of the J-class amplification output matching network serves as an output end of the amplifier; the ultra-wideband amplification network is further connected with a first active bias network, a second active bias network, a feed matching network and a passive bias network respectively. The high-linearity ultra-wideband amplifier provided by the application adopts Darlington + common-source common-gate amplification network, is combined with a novel active bias technology, adopts J-class amplification output matching network for output matching, and realizes the characteristics of ultra-wideband, high gain, high linearity and high efficiency together, and has the advantages of wide working frequency band, high gain, high linearity, high efficiency, low power consumption and small area.

This invention relates to the field of harmonic suppression technology, and more particularly to an on-chip integrated harmonic suppression system and amplifier for an ultra-wideband amplifier. The system includes: an input RF switch connected to the output of an ultra-wideband amplifier; an output RF switch; N filter paths connected between the input and output RF switches, each filter path corresponding to a sub-band divided within the entire operating frequency band of the ultra-wideband amplifier, and the upper limit frequency of each sub-band being less than twice its lower limit frequency; and a frequency control unit connected to the input and output RF switches and each filter path, used to control the input and output RF switches to synchronously select the corresponding filter path according to the current operating frequency. This invention solves the problem that existing technologies cannot effectively filter out harmonics in the overlapping frequency band of the fundamental frequency and harmonics without damaging the fundamental frequency.

The invention provides a signal amplification circuit, an ultra-wideband amplifier and electronic equipment, and relates to the technical field of amplifiers. The signal amplification circuit comprises: an input transmission line for receiving an input signal; the first end of each amplification unit is connected with the input transmission line, and every two adjacent amplification units are connected through a stabilizing module; wherein the amplifying unit is used for amplifying the signal, and the stabilizing module at least comprises a stabilizing resistor; the second end of each amplification unit is connected with the output transmission line; wherein the output transmission line is used for outputting a signal amplified by the amplification unit. The stability of the signal amplification circuit can be improved, the signal amplification circuit can stably work in the terahertz wave band, and the working frequency application range of the signal amplification circuit is widened.

A method for designing wideband amplifier includes employing two common-source amplifiers based on an inductive source degeneration architecture and peripheral circuits connected thereto to build the wideband amplifier. Wherein, after impedance matching of the two common-source amplifiers and the peripheral circuits at a predetermined frequency is achieved, an inductor circuit is inserted between the two common-source amplifiers as a part of the wideband amplifier. After the insertion, the impedance of the inductor circuit is adjusted such that a gain variation of the wideband amplifier within a predetermined frequency band is not greater than a predetermined variation threshold. Thereafter, output impedance and input impedance of the wideband amplifier are adjusted to reduce signal reflection generated within the predetermined frequency band to realize designing of the wideband amplifier.

This application discloses a radio frequency power amplifier, a remote radio unit, and a base station. The radio frequency power amplifier includes three amplifier branches. In this specification, two amplifier branches have narrow operating frequency bands and operate on frequency band A and frequency band B, respectively, and the other amplifier branch is designed to have a wide frequency band and operates on frequency band A+B. The radio frequency power amplifier further includes an inter-frequency power divider circuit and two circulators. The inter-frequency power divider circuit performs inter-frequency power division on the output signal of the wideband amplifier branch to output two narrowband signals, which are output after being power-combined by the circulator. Based on the technical solution of this application, a wideband problem is converted into a narrowband problem, thereby improving power amplification efficiency. In addition, the wideband amplifier branch provides a power distribution function, thereby processing high-power wideband signals. A narrowband isolator is used at a lower level of the circulator, thereby reducing the difficulty of designing the isolator.

An integrated circuit includes a first transistor and a second transistor. A first current path terminal of the second transistor is coupled to a reference voltage terminal. A first current path terminal of the first transistor is coupled to a second current path terminal of the second transistors. A second current path terminal of the first transistor is coupled to a first differential output terminal. A control terminal of the second transistor is coupled to a first differential input terminal. The integrated circuit includes a first resistor with a first terminal and a second terminal. The first terminal is coupled to the bulk terminal of the first transistor, and the second terminal is coupled to the reference voltage terminal. The first resistor is disposed in a dielectric layer above the first and second transistors.

The embodiment of the application provides a signal amplification processing device and a mobile communication device. It belongs to the technical field of communication. The signal amplification processing device comprises a processing unit, a first mobile signal transceiver, a first Wi-Fi signal transceiver, a first wideband amplifier, a second mobile signal transceiver, a second Wi-Fi signal transceiver, a second wideband amplifier, a first switch and a second switch. The first mobile signal transceiver and the first Wi-Fi signal transceiver correspond to a first frequency range, the second mobile signal transceiver and the second Wi-Fi signal transceiver correspond to a second frequency range, and the first frequency range is smaller than the second frequency range. The signal amplification processing device solves the problem that the manufacturing cost of the signal amplification circuit of the mobile communication device is high.

The invention relates to a broadband amplifier with bulk resistance. An integrated circuit includes a first transistor (M1, Fig. 1) and a second transistor (M2). A first current path terminal (M2 source) of the second transistor is coupled to a reference voltage terminal (AVss). A first current path terminal (source of M1) of the first transistor is coupled to a second current path terminal (drain of M2) of the second transistor. A second current path terminal (drain of M1) of the first transistor is coupled to a first differential output terminal (Vop). The control terminal (M2 gate) of the second transistor is coupled to the first differential input terminal (Vip). The integrated circuit includes a first resistor (202) having a first terminal and a second terminal. The first terminal is coupled to the body terminal (M1 body or main body) of the first transistor, and the second terminal is coupled to a reference voltage terminal (AVss). A first resistor (202) is disposed in the dielectric layer (i.e., 406 of figures 4 and 5) over the first and second transistors.

Amplifiers with temperature-adaptive gain and peaking gain control are described. An example semiconductor device includes an amplifier, a temperature sense circuit to provide a temperature control signal based on an operating temperature of the amplifier, and a level shifter to bias shift an output of the amplifier based on the temperature control signal. The level shifter can be further configured to adjust a peaking gain of the amplifier based on the temperature control signal in some cases.

A wideband amplifier includes an input matching network for matching a transconductor stage to an input impedance and includes an output matching network for matching the transconductor stage to an output impedance. Both the input and output matching networks each includes a parallel LC tank circuit arranged in parallel with a series LC tank circuit. The tank circuit arrangements configure the input and output matching networks to be resonant at a first frequency, a midrange frequency that is greater than the first frequency, and a second frequency that is greater than the midrange frequency to provide wideband matching.

Circuit and methods using a single low-noise amplifier (LNA) to provide amplification for a wide band of RF frequencies while maintaining high gain and a low noise factor. Embodiments include an amplifier circuit including an input signal path for receiving a wideband RF signal; a switched inductor tuning block coupled to the input signal path and configured to selectively couple one of a plurality of inductances to the input signal path; and an amplifier coupled to the switched inductor tuning block and configured to receive the RF signal after passage through the selected coupled inductance. The switched inductor tuning block includes a plurality of selectable branches, each including an RF input switch; an RF output switch; an inductor coupled between the RF input switch and the RF output switch; and first and second shunt switches coupled between a respective terminal of the inductor and circuit ground.

The invention relates to the technical field of radio frequency electronic circuits, and discloses a dual-mode radio frequency broadband amplifier which comprises an input unit, an amplifying circuit, a diode feedback branch, a switch control unit and an output unit. The diode feedback branch circuit is used for changing the negative feedback intensity of the amplifying circuit through conduction or cut-off of a diode; the switch control unit is used for controlling the diode feedback branch to be conducted when the switch is closed, so that the negative feedback intensity of the amplifying circuit is enhanced, and the amplifier works in a high-power mode; and when the switch is switched off, the diode feedback branch is controlled to be switched off so as to weaken the negative feedback intensity of the amplifying circuit and enable the amplifier to work in a low-power mode. According to the invention, high-efficiency switching between high and low power modes is realized.