The application relates to the field of
semiconductor packaging and discloses a dual-mode cooperative high-aspect-ratio glass via metallization integrated process, which comprises the following steps: preparing a high-aspect-ratio via by
laser modification and wet
etching on a glass substrate; preparing a
metal seed layer on the surface of the substrate, and hot-press bonding two pieces of substrates to form a stacked structure by using a light-decomposing bonding layer; placing the stacked structure in high-pressure
carbon dioxide for pre-lubricating treatment, and then simultaneously applying a pulse
direct current and a
radio frequency power source for dual-mode cooperative
electroplating; after surface
polishing, irradiating the bonding layer with
ultraviolet light to separate the substrates and perform annealing. The application changes the
electric field distribution by means of double-glass stacking, replaces air with high-pressure gas to eliminate the gas-liquid interfacial tension of micropores, and breaks the
ion mass transfer barrier with the help of a
radio frequency field, so that the problems of bubble blockage and concentration difference polarization in the high-aspect-ratio via are solved, efficient and dense filling of
metal in the
deep hole is realized, and the substrates can be separated without residual glue and damage.