The invention provides an inversion
high voltage alternating /
direct current light-emitting
diode and a manufacture method thereof. The light-emitting
diode comprises a routing
electrode, a
sapphire substrate, an N-GaN layer, a light-emitting layer, a P-gAn layer, a current
diffusion layer, an insulating layer, a
metal reflecting layer, an insulation flat layer, a bonding
metal medium layer and a support substrate from top to bottom. Mat surfaces formed by
plasma dry etching are arranged on two sides of the
sapphire substrate, a through hole formed by
laser drilling is arranged in the
sapphire substrate, and
metal is filled in the through hole to enable an
electrode on the N-GaN layer and the routing
electrode to be connected. The light-emitting
diode enables a
wafer to be inversely bonded on a substrate of a radiating support, a positive electrode and a negative electrode are respectively located on the upper side and the lower side of a
chip, each light-emitting unit on the
chip forms an inversed trapezoidal structure due to inversion, each light-emitting unit is wrapped by the reflecting layer to form a structure with an upward opening and effects of reflecting cups, simultaneously shielding of electrodes on light-emitting directions is reduced, only the negative electrode is arranged above the
chip, and
layout design of the light-emitting units of the
high voltage light-emitting diode can be convenient.