3 results about "Nanowire transistors" patented technology

A nanowire device of the present description may be produced with the incorporation of at least one hardmask during the fabrication of at least one nanowire transistor in order to assist in protecting an uppermost channel nanowire from damage that may result from fabrication processes, such as those used in a replacement metal gate process and / or the nanowire release process. The use of at least one hardmask may result in a substantially damage free uppermost channel nanowire in a multi-stacked nanowire transistor, which may improve the uniformity of the channel nanowires and the reliability of the overall multi-stacked nanowire transistor.

Semiconductor devices and methods of forming semiconductor devices are disclosed herein, and more particularly to semiconductor devices including wrap-around gate transistor structures and methods of manufacturing the same. Methods described herein can etch a complex shape (e.g., L-shaped) into a multi-layer stack to form a fin for an active region of a wrap-around gate nanowire transistor structure. In some embodiments, the active region can have a first source / drain region with a first channel width and a first width, and a second source / drain region with a second channel width and a second width that is less than the first width.

The application provides a preparation method of a stretchable polymer nanowire transistor and photoelectric application thereof, and belongs to the field of stretchable electronic devices. The transistor adopts a bottom gate top contact or bottom gate bottom contact structure, is composed of a stretchable substrate, a gate, an insulating layer, a semiconductor layer and source-drain electrodes, and the semiconductor layer is a polymer nanowire prepared by coaxial fluid jet printing of a conjugated polymer and elastomer polymer blended solution. The method realizes preparation of nanowires with high stretchability and high orientation, so that the semiconductor layer has excellent stretchability and electrical properties. Through horizontal and vertical integration, a stretchable complementary inverter and a visual self-adaptive device are constructed, and the advantages of multifunctional integration are exhibited. The application has wide application prospects in the development of miniaturized, highly integrated wearable electronic devices and multifunctional neural interfaces.