128 results about "Nanowire transistors" patented technology

The present invention relates to vertical nanowire transistors with a wrap-gated geometry. The threshold voltage of the vertical nanowire transistors is controlled by the diameter of the nanowire, the doping of the nanowire, the introduction of segments of heterostructures in the nanowire, the doping in shell-structures surrounding the nanowire, tailoring the work function of the gate stack, by strain engineering, by control of the dielectrica or the choice of nanowire material. Transistors with varying threshold voltages are provided on the same substrate, which enables the design of advanced circuits utilizing the shifts in the threshold voltages, similar to the directly coupled field logic.

Transistor devices having a self-aligned gate structure on transparent substrates and techniques for fabrication thereof are provided. In one aspect, a method of fabricating a transistor device includes the following steps. A channel material is formed on a transparent substrate. Source and drain electrodes are formed in contact with the channel material. A dielectric layer is deposited on the channel material. A photoresist is deposited on the dielectric layer and developed using UV light exposure through the transparent substrate. A gate metal(s) is deposited on the exposed portions of the dielectric layer and the undeveloped portions of the photoresist. The undeveloped portions of the photoresist are removed along with portions of the gate metal over the source and drain regions to form a gate of the device on the dielectric layer over the channel material which is self-aligned to the source and drain electrodes.

A nanowire circuit architecture is presented. The technology comprises of nanowire transistors (8,9), and optionally nanowire capacitors (12) and nanowire resistors (11), that are integrated using two levels of interconnects only (1,2). Implementations of ring-oscillators, sample- and-hold circuits, and comparators may be realized in this nanowire circuit architecture. Circuit input and circuit output as well as the transistor connections within each circuit are provided in the two levels of interconnects (1,2).

A nanowire transistor structure is fabricated by using auxiliary epitaxial nucleation source/drain fin structures. The fin structures include semiconductor layers integral with nanowires that extend between the fin structures. Gate structures are formed between the fin structures such that the nanowires extend through the gate conductors. Following spacer formation and nanowire chop, source/drain regions are grown epitaxially between the gate structures.

Embodiments of the invention describe parasitic capacitance reduction structure for nanowire transistors and method of manufacturing. According to one embodiment the method includes providing a substrate, forming a first nanowire on the substrate, forming a second nanowire on the first nanowire, forming a first dielectric layer between the substrate and the first nanowire, and forming a second dielectric layer between first dielectric layer and the second nanowire, where the second dielectric layer has a higher dielectric constant than the first dielectric layer. According to one embodiment, a nanowire transistor includes a first nanowire on a substrate, a second nanowire on the second nanowire, a first dielectric layer between the substrate and the first nanowire, and a second dielectric layer between the first dielectric layer and the second nanowire, where the second dielectric layer has a higher dielectric constant than the first dielectric layer.

A FinFET and nanowire transistor with strain direction optimized in accordance with the sideface orientation and carrier polarity and an SMT-introduced manufacturing method for achieving the same are provided. A semiconductor device includes a pMISFET having a semiconductor substrate; a rectangular solid-shaped semiconductor layer formed at upper part of the substrate to have a top surface parallel to a principal plane of the substrate and a sideface with a (100) plane perpendicular to the substrate's principal plane; a channel region formed in the rectangular semiconductor layer; a gate insulating film formed at least on the sideface of the rectangular layer; a gate electrode on the gate insulator film; and source/drain regions formed in the rectangular semiconductor layer to interpose the channel region therebetween. The channel region is applied a compressive strain in the perpendicular direction to the substrate principal plane. A manufacturing method of the device is also disclosed.

The present invention is directed to a display using nanowire transistors. In particular, a liquid crystal display using nanowire pixel transistors, nanowire row transistors, nanowire column transistors and nanowire edge electronics is described. A nanowire pixel transistor is used to control the voltage applied across a pixel containing liquid crystals. A pair of nanowire row transistors is used to turn nanowire pixel transistors that are located along a row trace connected to the pair of nanowire row transistors on and off. Nanowire column transistors are used to apply a voltage across nanowire pixel transistors that are located along a column trace connected to a nanowire column transistor. Displays including organic light emitting diodes (OLED) displays, nanotube field effect displays, plasma displays, micromirror displays, micoelectromechanical (MEMs) displays, electrochromic displays and electrophoretic displays using nanowire transistors are also provided.

A nanowire transistor according to the present invention includes: at least one nanowire 13 including a core portion 13a that functions as a channel region and an insulating shell portion 13b that covers the surface of the core portion 13a; source and drain electrodes 14 and 15, which are connected to the nanowire 13; and a gate electrode 21 for controlling conductivity in at least a part of the core portion 13a of the nanowire 13. The core portion 13a is made of semiconductor single crystals including Si and has a cross section with a curved profile on a plane that intersects with the longitudinal axis thereof. The insulating shell portion 13b is made of an insulator including Si and functions as at least a portion of a gate insulating film.

The invention discloses a nano-wire field effect transistor comprising a gate electrode, a source region, a drain region, a central region and a gate dielectric layer. The central region is in the core-shell structures which are coaxial; the gate dielectric layer fully surrounds the central region; the gate electrode fully surrounds the gate dielectric layer; the source region and the drain region are respectively arranged on two sides of the central region; the core structure of the central region is made from insulating material, and the shell structure of the central region is made from semiconductor material; the doping type and the doping concentration of the semiconductor material of the shell structure of the central region are adjustable; the lengths of both the core structure and the shell structure and the radii of both the core structure and the shell structure are adjustable; and the materials of the gate dielectric layer, the gate electrode, the source region and the drain region are adjustable. Due to the adoption of the insulating core structure, the off-current of the traditional nano-wire transistor can be reduced effectively, and the current on-off ratio of the devices can be increased. The threshold voltage shifting and the drain induced barrier lowering of the nano-wire field effect transistor are less affected by the short channel effect, and the size reducing performance of the nano-wire field effect transistor is more excellent.

The invention discloses an integrated nonpolar GaN nanowire transistor high in electron mobility and a preparation method thereof. The transistor comprises a substrate and an insulating dielectric layer located on the substrate, a plurality of grooves at intervals are etched in the insulating dielectric layer, heterojunction nanowires are respectively grown in the grooves, a source electrode and a drain electrode are formed on the insulating dielectric layer and are respectively located at two ends of the heterojunction nanowires and respectively connected with each heterojunction nanowire, a gate electrode is formed between the source electrode and the drain electrode, and a gate dielectric layer is arranged between the gate electrode and the heterojunction nanowires. According to the transistor, epitaxial growth and device preparation are united organically, process steps are greatly simplified, and the method is simplified. The transistor solves the problem of uncontrollability and disorder caused by the solution dilution and coating for current nanowire transistors, the nanowire transistor preparation success rate is effectively improved. The nanowire transistor can be widely applied to the field of semiconductors.

The present invention relates to a structure and manufacturing process of a nano device transistor for a biosensor. The structure, the manufacturing process and the related circuit for a carbon nano tube or nano wire transistor biosensor device are provided. The refurbished nano device is used for absorbing various anti-bodies so as to detect the specific antigens or absorbing various biotins. Therefore, the object of the present invention to detect the specific species for bio measurement can be achieved.

A method for fabricating a surrounding-gate silicon nanowire transistor with air sidewalls is provided. The method is compatible with the CMOS process; the introduced air sidewalls can reduce the parasitic capacitance effectively and increase the transient response characteristic of the device, thus being applicable to a high-performance logic circuit.

An insulated gate silicon nanowire transistor amplifier structure is provided and includes a substrate formed of dielectric material. A patterned silicon material may be disposed on the substrate and includes at least first, second and third electrodes uniformly spaced on the substrate by first and second trenches. A first nanowire formed in the first trench operates to electrically couple the first and second electrodes. A second nanowire formed in the second trench operates to electrically couple the second and third electrodes. First drain and first source contacts may be respectively disposed on the first and second electrodes and a first gate contact may be disposed to be capacitively coupled to the first nanowire. Similarly, second drain and second source contacts may be respectively disposed on the second and third electrodes and a second gate contact may be disposed to be capacitively coupled to the second nanowire.

The invention discloses a fabrication method for a surrounding gate silicon nanowire transistor with air as spacers. The method comprises: performing isolation, and depositing a material A which has a higher etch selectivity ratio with respect to Si; performing photolithography to define a Fin hard mask; etching the material A to form the Fin hard mask; performing source and drain implantation; performing photolithography to define a channel region and large source/drain regions; forming the Si Fin and the large source/drains; removing the hard mask of the material A; forming a nanowire; etching the SiO₂ to form a floating nanowire; forming a gate oxide layer; depositing a polysilicon; performing polysilicon injection; performing annealing to activate dopants; etching the polysilicon; depositing SiN; performing photolithography to define a gate pattern; etching the SiN and the polysilicon to form the gate pattern; separating the gate and the source/drain with a space in between filled with air; depositing SiO₂ to form air sidewalls; performing annealing to densify the SiO₂ layer; using subsequent processes to complete the device fabrication. The invention is compatible with the CMOS process flow. The introduction of the air sidewalls can effectively reduce the parasitic capacitance of the device, and improve the transient response of the device, so that the method is applicable for a logic circuit with high performance.

One aspect of the present subject matter relates to a method for forming a transistor. According to an embodiment of the method, a pillar of amorphous semiconductor material is formed on a crystalline substrate, and a solid phase epitaxy process is performed to crystallize the amorphous semiconductor material using the crystalline substrate to seed the crystalline growth. The pillar has a sublithographic thickness. A transistor body is formed in the crystallized semiconductor pillar between a first source/drain region and a second source/drain region. A surrounding gate insulator is formed around the semiconductor pillar, and a surrounding gate is formed around and separated from the semiconductor pillar by the surrounding gate insulator. Other aspects are provided herein.

A quasi-nanowire transistor and a method of manufacturing the same are provided, the quasi-nanowire transistor comprising: providing an SOI substrate comprising a substrate layer (100), a BOX layer (120) and an SOI layer (130); forming a basic fin structure on the SOI layer, the basic fin structure comprising at least one silicon/silicon-germanium stack; forming source/drain regions (110) on both sides of the basic fin structure; forming a quasi-nanowire fin from a basic fin structure and an SOI layer thereunder; and forming a gate stack across the quasi-nanowire fin. The method can effectively control gate length characteristics. A semiconductor structure formed by the above method is also provided.

A well-structure anti-punch-through microwire device and associated fabrication method are provided. The method initially forms a microwire with alternating highly and lightly doped cylindrical regions. A channel ring is formed external to the microwire outer shell and surrounding a first dopant well-structure region in the microwire, between source and drain (S/D) regions of the microwire. The S/D regions are doped with a second dopant, opposite to the first dopant. A gate dielectric ring is formed surrounding the channel ring, and a gate electrode ring is formed surrounding the gate dielectric ring. The well-structure, in contrast to conventional micro or nanowire transistors, helps prevent the punch-through phenomena.

Systems and methods for forming a low contact resistance nanowire transistor are described. The transistor includes a gate formed over a substrate including a gate conductor. Gate spacers are formed on sides of the gate. At least one semiconductor nanowire is formed through the gate such that the at least one semiconductor nanowire extends through the gate conductor and the gate spacers and into source and drain regions grown from surfaces of the at least one semiconductor nanowire adjacent to sides of the gate to increase the surface area of the source drain region contacting the semiconductor nanowire.