Grooving and contact burying method for crystalline silicon solar cell

A solar cell and crystalline silicon technology, applied in circuits, electrical components, sustainable manufacturing/processing, etc., can solve the problems of silicon wafer damage, high cost, and high machine precision requirements, and achieve cost savings, improve efficiency, and reduce shading. Effect

Inactive Publication Date: 2012-06-27
IRICO
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantages are: grooves will cause damage to silicon wafers, resulting in defects, high machine precision requirements, and high cost. At present, domestic equipment for such pro

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] A method for engraving grooves and buried gates on the surface of a crystalline silicon solar cell, comprising the following basic steps:

[0018] 1. Print a layer of protective film paint pattern on the surface of the silicon wafer after surface texturing and dry it. The thickness of the wet mask is 10um. The pattern covers the part of the surface of the silicon chip that does not need electrodes, and exposes the part of the surface of the silicon chip that needs to be grooved.

[0019] The preparation method of the above-mentioned mask paint: join ethyl cellulose resin and epoxy resin in 95% organic solvent by weight percentage 5%, dissolve completely in constant temperature water tank, temperature 75 ℃ ℃, filter through 200 meshes to obtain organic mask Film coating; above-mentioned ethyl cellulose resin and epoxy resin are proportioned with mass ratio 1: 1; above-mentioned organic solvent comprises that mass ratio is 50% propylene glycol methyl ether acetate, 20% et...

Embodiment 2

[0026] A method for engraving grooves and buried gates on the surface of a crystalline silicon solar cell, comprising the following basic steps:

[0027] 1. Print a layer of protective film coating graphics on the surface of the silicon wafer after surface texturing and dry it. The wet film thickness is 20um. The pattern covers the part of the surface of the silicon chip that does not need electrodes, and exposes the part of the surface of the silicon chip that needs to be grooved.

[0028] The preparation method of above-mentioned mask paint:

[0029] Add 40% of ethyl cellulose resin and epoxy resin to 60% organic solvent by weight percentage, dissolve completely in a constant temperature water tank at a temperature of 100°C, and filter to obtain an organic mask coating;

[0030] Above-mentioned ethyl cellulose resin and epoxy resin are proportioned with 1: 2 by weight;

[0031] The above organic solvent is a mixture of 20% butyl carbitol, 10% propylene glycol methyl ether ...

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Abstract

The invention relates to a grooving and contact burying method for a crystalline silicon solar cell, which is characterized by including steps: firstly, printing a protection film layer on the surface of a silicon chip flock with the surface textured; secondly, immersing the silicon chip coated by the film into NaOH or KOH solution, grooving by 5-10um in depth, and cleaning after grooving; thirdly, putting the silicon chip in hydrofluoric acid solution to remove an organic masks on the surface of the silicon ship and drying; fourthly, using the silicon chip to make a back electrode, a back electric field and a positive electrode by means of screen printing; fifthly, depositing a silicon nitride film layer on the surface of the whole silicon chip; and sixthly, sintering the obtained silicon chip at 650-900 DEG C. The whole electrode grate line can be completely covered by a silicon nitride anti-reflection film by etching the surface of the silicon chip first and then depositing the silicon nitride anti-reflection film after the electrodes are made in the etched groove, so that silver can be partially replaced by base metals such as copper and the like, and cost is saved.

Description

technical field [0001] The invention relates to a method for carving grooves and buried gates of crystalline silicon solar cells. Background technique [0002] According to the forecast of the World Energy Organization (IEA), the European Joint Research Center, and the European Photovoltaic Industry Association, the world's photovoltaic power generation will account for 1% of the total electricity in 2020, and by 2040, photovoltaic power generation will account for 20% of the global power generation. For decades, the growth rate of the global photovoltaic industry will be as high as 5%-30%. It can be predicted that in the middle of the 21st century, solar photovoltaic power generation will become one of the basic energy sources for human beings and occupy a certain position in the world's energy composition. The surface electrode of the solar cell is one of the key steps in the manufacturing process of the cell, which has a great influence on the photoelectric conversion ef...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/0224
CPCY02P70/50
Inventor 李驰
Owner IRICO
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