Diamond heat sink GaN-based different-side electrode LED manufacturing method

Abstract

The present invention discloses a diamond heat sink GaN-based different-side electrode LED manufacturing method. The method comprises: performing MOCVD growth of GaN-based LED epitaxial materials on a sapphire substrate; performing ICP etching of the GaN-based LED epitaxial materials of the sapphire substrate, and performing device isolation; performing magnetron sputtering of p-type contact metal, reflective metal and bonding metal on the surfaces of the GaN-based LED epitaxial materials on the sapphire substrate; performing magnetron sputtering of the bonding metal on the surface of a diamond heat sink substrate; performing metal bonding of the GaN-based LED epitaxial materials of the sapphire substrate and the diamond heat sink substrate; performing stripping of the sapphire substrate through adoption of the laser stripping technology; and finally performing magnetron sputtering of n-type contact metal. The diamond heat sink GaN-based different-side electrode LED manufacturing method employs diamond with high heat conductivity to take as a heat sink, LED anodic metal is in metal bonding contact with the diamond, and the heat radiation advantage is obvious; the LED anodic metal is in metal bonding with the diamond in a low temperature to effectively avoid the influence of traditional high-temperature bonding on the LED performance; and the technology is simple in the sapphire substrate leaser stripping process.

Description

[0001] 【Technical field】 [0002] The invention belongs to the technical field of LED heat dissipation, and in particular relates to a method for manufacturing a diamond heat sink GaN-based different-side electrode LED. [0003] 【Background technique】 [0004] As the fourth-generation lighting source, GaN-based LED has the advantages of high efficiency, long service life, energy saving, and environmental protection, and has become a strategic emerging industry that focuses on development at home and abroad. However, as the lighting power continues to increase, the heat generated by the LED will rise sharply. If the heat is not dissipated in time, the high temperature inside the LED due to heat will seriously affect the life and lighting performance of the LED. Therefore, heat dissipation has become an LED lighting technology. It is a key issue that needs to be solved urgently. [0005] The traditional solution to LED heat dissipation is to use flip-chip welding technology to a...

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Problems solved by technology

However, as the lighting power continues to increase, the heat generated by the LED will rise sharply. If the heat is not dissipated in time, the high temperature inside the LED due to heat will seriously affect the life and lighting performance of the LED. Therefore, heat dissipation has become an LED lighting technology. A key issue in the field that needs to be solved urgently

[0005] The traditional solution to LED heat dissipation is to use flip-chip welding technology to add an aluminum or copper heat dissipation substrate to the same-side electrode LED, and use the heat dissipation substrate to conduct heat. On the one hand, the flip-chip welding technology is more complicated; m K) and copper (400W / m K) have limited thermal conductivity, it is difficult to meet the heat dissipation requirements of high-power LED lighting

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