31 results about "Memory formation" patented technology

The present invention relates to a method of identifying a gene or gene product associated with transcription dependent memory formation in an animal comprising the steps of: (a) administering to said animal sufficient small interfering RNA (siRNA) specific for the gene to inhibit gene function; (b) training said animal under conditions sufficient to induce transcription dependent memory formation in a normal untreated animal; and (c) determining the level of transcription dependent memory formation induced by the training of the treated animal. The present invention provides methods of using small interfering PNAs (siRNA) in hippocampus to identify genes and gene product whose inhibition affects contextual and temporal long-term (LTM) memory, but not short-term memory (STM).

The present invention relates to compounds of formula (I):

or a pharmaceutically acceptable salt, hydrate, solvate, or prodrug thereof, wherein U, J, V, X, R^2a, R^2b, R^2c, R⁵ and t are as described herein. The present invention relates generally to inhibitors of histone deacetylase and to methods of making and using them. These compounds are useful for promoting cognitive function and enhancing learning and memory formation. In addition, these compounds are useful for treating, alleviating, and/or preventing various conditions, including for example, neurological disorders, memory and cognitive function disorders/impairments, extinction learning disorders, fungal diseases and infections, inflammatory diseases, hematological diseases, and neoplastic diseases in humans and animals.

The present invention relates to compounds of formula (I):

or a pharmaceutically acceptable salt, hydrate, solvate, or prodrug thereof, wherein U, J, V, X, R^2a, R^2b, R^2c, R⁵ and t are as described herein. The present invention relates generally to inhibitors of histone deacetylase and to methods of making and using them. These compounds are useful for promoting cognitive function and enhancing learning and memory formation. In addition, these compounds are useful for treating, alleviating, and/or preventing various conditions, including for example, neurological disorders, memory and cognitive function disorders/impairments, extinction learning disorders, fungal diseases and infections, inflammatory diseases, hematological diseases, and neoplastic diseases in humans and animals.

The invention belongs to the field of microelectronic technology, in particular to a method for eliminating forming voltage of CuxO resistive memory. The method comprises following steps: growing CuxO memory medium, and annealing in oxygen-deficiency environment such as N2, Ar, forming gas or vacuum to reduce the surface CuO to Cu2O, thus eliminating forming voltage of the memory during the first programming, reducing current and voltage of write operation, and preventing CuxO memory medium with resistance switch characteristics below the surface CuO layer from being damaged by high current. The method of the invention has the advantages of simple process, low cost and significantly improved fatigue characteristics of the CuxO resistive memory.

The present invention relates to compounds of formula (I) or a pharmaceutically acceptable salt, hydrate, solvate, or prodrug thereof, wherein X₁, X₂, X₃, X₄, X₅, W₁, W₂, W₃, and W₄ are as described. The present invention relates generally to inhibitors of histone deacetylase and to methods of making and using them. In one aspect, the invention relates to selective HDAC3 inhibitors useful for protecting β-cells and improving insulin resistance. The selective HDAC3 inhibitors are also useful for promoting cognitive function and enhancing learning and memory formation. Compounds of the invention are useful for treating, alleviating, and/or preventing various conditions, including for example, a metabolic disorder such as type 1 or type 2 diabetes, dyslipidemias, lipodystrophies, liver disease associated with metabolic syndrome, polycystic ovarian syndrome, or obesity; inflammatory disease; neurological disorder; a memory or cognitive function disorder/impairment; an extinction learning disorder; fungal disease or infection; viral disease or infection such as HIV; hematological disease; liver disease; lysosomal storage disease; or neoplastic disease in humans or animals.

A resistive memory formation and test method is disclosed. A memory array comprises a plurality of resistive storage units; a processing module is used for sequentially providing a first formation voltage and a second formation voltage for the resistive storage units so as to enable the resistive storage units to switch from an insulation state to an impedance state; the processing module provides a reset voltage to the resistive storage units so as to transform the impedance state of the resistive storage units to first impedance; the processing module provides a set voltage to the resistive storage units so as to transform the impedance state of the resistive storage units from the first impedance to second impedance; and the set voltage is higher than the second formation voltage, and the second formation voltage is higher than the first formation voltage.

A semiconductor structure includes a static random access memory (SRAM) cell comprising a first pull-up MOS device, a first pull-down MOS device and a first pass-gate MOS device, a first metallization layer, and an inter-layer dielectric (ILD) underlying the first metallization layer, wherein the ILD comprises an upper portion and a lower portion, a first first-layer contact in the lower portion of the ILD and connecting at least two of the first pull-up MOS device, the first pull-down MOS device and the first pass-gate MOS device. The first first-layer contact is physically isolated from second layer contacts in the upper portion of the ILD. The semiconductor structure further includes a second first-layer contact in the lower portion of the ILD, and a second-layer contact having at least a portion on the second first-layer contact, wherein the second layer contact electrically connects the second first-layer contact.

A performance of a semiconductor device is improved. A film, which is made of silicon, is formed in a resistance element formation region on a semiconductor substrate, and an impurity, which is at least one type of elements selected from a group including a group 14 element and a group 18 element, is ion-implanted into the film, and a film portion which is formed of the film of a portion into which the impurity is ion-implanted is formed. Next, an insulating film with a charge storage portion therein is formed in a memory formation region on the semiconductor substrate, and a conductive film is formed on the insulating film.

The invention relates to a memory formation method. The memory formation method comprises the following steps: providing a substrate, wherein a stacking structure is formed on the surface of the substrate; forming a grid line spacer groove in the stacking structure, wherein the grid line spacer groove penetrates through the stacking structure and then extends to the surface of the substrate; and forming a semiconductor layer in the grid line spacer groove, wherein the grid line spacer groove is filled with the semiconductor layer, the inside of the semiconductor layer is doped with doping atoms, and the grain size of the semiconductor layer can be reduced by the doping atoms. The grains of the semiconductor layers formed by the method are small, and the performance of a memory can be improved.

The invention relates to a method of manufacturing a semiconductor device. An improvement is achieved in the performance of a semiconductor device. Over a first insulating film formed over a main surface of a semiconductor substrate located in a memory formation region and having an internal charge storage portion and over a second insulating film formed over the main surface of the semiconductor substrate located in a main circuit formation region, a conductive film is formed. Then, in the memory formation region, the conductive film and the first insulating film are patterned to form a first gate electrode and a first gate insulating film while, in the main circuit formation region, the conductive film and the second insulating film are left. Then, in the main circuit formation region, the conductive film and the second insulating film are patterned to form a second gate electrode and a second gate insulating film.

To provide a semiconductor device having mix-loaded therein a nonvolatile memory cell and a field effect transistor at a reduced cost. A method of manufacturing a semiconductor device includes pattering a conductor film by using an additional mask that covers a gate electrode formation region of a memory formation region and exposes a main circuit formation region (field effect transistor formation region) and thereby forming a gate electrode of a nonvolatile memory cell in the memory formation region and then forming an n⁻ type semiconductor region of the nonvolatile memory cell in a semiconductor substrate by ion implantation using the above-mentioned additional mask without changing it to another one.

The invention relates to the technical field of neurology, in particular to a neurology rehabilitation chair capable of promoting formation of leg memory, which comprises a chair body, an adjusting structure is mounted on the chair body, a transmission structure is mounted on the adjusting structure, a sliding structure is mounted on the chair body, a fixing structure is mounted on the adjusting structure, and the fixing structure is mounted on the sliding structure. A rotating structure is mounted on the seat body, and a protective structure is mounted on the seat body; by installing the adjusting structure on the seat body, the legs of a patient can be moved front and back, leg memory forming can be conveniently conducted on the patient, meanwhile, the legs of the patient can be moved front and back and can also be moved up and down through the transmission structure, and by installing the sliding structure on the seat body, adjustment can be conducted according to the height and the leg length of the patient; and the feet of the patient can be conveniently fixed through the fixing structure.

The invention discloses an intelligent access method and device for downhole formation fluid in an oil field. The method includes: extracting downhole formation fluid and detecting it in real time downhole; when the result shows that it is not the real formation fluid, maintain the original state; when the result shows When it is the real formation fluid, store the real formation fluid; when the real formation fluid is full, re-detect the redundant real formation fluid; when the result is determined to be the real formation fluid again, lift the stored real formation fluid to the ground, thereby Get a sample. The device is mainly composed of the first solenoid valve, the second solenoid valve, the downhole moisture tester, the downhole sample storage cylinder and the one-way valve. The pipe where the valve is located is connected in parallel, and the parallel pipe is connected in series with the downhole water content tester. The invention can realize on-line real-time detection, enhance the effectiveness of sampling, and at the same time automatically identify and store the real fluid of the formation to improve the sampling efficiency.

Disclosed herein are compositions and methods for enhancing T-cell activity by modulating a miRNA so as to improve T-cell therapies. Described herein is the discovery that miRNA (Iet7) regulates T cell responses (including both T-helpers and cytotoxic CD8 Lymphocyte (CTLs)). Described herein are compositions and methods to increase the cytotoxic activity of CTLs and improve cancer immunotherapies.