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Method for eliminating CuxO resistance memory formation voltage

A technology of resistive memory and voltage, applied in the field of microelectronics, can solve the problems of lack of resistance conversion characteristics, destruction of storage media, and degradation of device performance.

Inactive Publication Date: 2008-07-30
FUDAN UNIV
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  • Summary
  • Abstract
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  • Application Information

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Problems solved by technology

CuO does not contribute to the resistive switching characteristics, while for Cu x When the O-based resistive memory is written for the first time, it needs to use a relatively large formation voltage to break down the CuO film on the surface layer. y O storage medium produces damage, leading to device performance degradation

Method used

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  • Method for eliminating CuxO resistance memory formation voltage
  • Method for eliminating CuxO resistance memory formation voltage
  • Method for eliminating CuxO resistance memory formation voltage

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Embodiment Construction

[0020] The invention is described more fully hereinafter in reference to the examples illustrated in the illustrations, providing preferred embodiments but should not be considered limited to the embodiments set forth herein. In the drawings, the thicknesses of layers and regions are exaggerated for clarity, but as schematic diagrams, they should not be considered as strictly reflecting the proportional relationship of geometric dimensions.

[0021] The drawings referenced herein are schematic illustrations of idealized embodiments of the invention, and the illustrated embodiments of the invention should not be considered limited to the particular shapes of the regions shown in the drawings, but include resulting shapes, such as manufacturing-induced deviation. For example, the curves obtained by dry etching usually have curved or rounded characteristics, but in the illustrations of the embodiments of the present invention, they are all represented by rectangles, and the repre...

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Abstract

The invention belongs to the field of microelectronic technology, in particular to a method for eliminating forming voltage of CuxO resistive memory. The method comprises following steps: growing CuxO memory medium, and annealing in oxygen-deficiency environment such as N2, Ar, forming gas or vacuum to reduce the surface CuO to Cu2O, thus eliminating forming voltage of the memory during the first programming, reducing current and voltage of write operation, and preventing CuxO memory medium with resistance switch characteristics below the surface CuO layer from being damaged by high current. The method of the invention has the advantages of simple process, low cost and significantly improved fatigue characteristics of the CuxO resistive memory.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, in particular to a method for eliminating Cu x A method of forming a voltage in a resistive memory. Background technique [0002] Memory occupies an important position in the semiconductor market. Due to the continuous popularization of portable electronic devices, the share of non-volatile memory in the entire memory market is also increasing, of which more than 90% of the share is occupied by FLASH. However, due to the requirement of storing charges, the floating gate of FLASH cannot be thinned without limit with the development of technology generation. It is reported that the limit of FLASH technology is around 32nm, which forces people to look for the next generation of non-volatile memory with better performance. Recently, resistive switching memory (resistive switching memory) has attracted high attention because of its high density, low cost, and the characteristics of breaking ...

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Application Information

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IPC IPC(8): H01L45/00H01L27/24G11C11/56G11C16/02
Inventor 林殷茵陈邦明吕杭炳
Owner FUDAN UNIV
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