Resistive memory formation and test method

A resistive memory and resistive storage technology, applied in static memory, digital memory information, information storage, etc., can solve the problem of the decrease of the set current Iset, the inability to clearly distinguish the set current Iset, and the decline of the data maintenance performance of the resistive memory and other issues to achieve the effect of improving yield, good effect and increasing performance

Active Publication Date: 2015-11-25
WINBOND ELECTRONICS CORP
View PDF3 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, after the resistive memory is baked and tested, the set current Iset is likely to decrease, making it impossible to clearly distinguish the set current Iset and the reset current Ireset
Therefore, the data retention performance of the resistive memory will decrease

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Resistive memory formation and test method
  • Resistive memory formation and test method
  • Resistive memory formation and test method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0032] In order to make the above and other objects, features, and advantages of the present invention more comprehensible, the preferred embodiments are specifically listed below, together with the accompanying drawings, and are described in detail as follows:

[0033] figure 1 A schematic diagram of a memory cell 100 of a resistive memory according to an embodiment of the invention is shown. The memory cell 100 includes a metal-insulator-metal element (metal-insulator-metal, hereinafter referred to as a MIM element) 110 and a transistor 120 . The MIM element 110 is coupled between the bit line BL and the transistor 120 , and the transistor 120 is coupled between the MIM element 110 and the source line SL, wherein the gate of the transistor 120 is coupled to the word line WL. exist figure 1 Among them, the resistance value of the MIM element 110 can be changed by applying a bias voltage to the MIM element 110 . For example, the resistance value of the MIM element 110 can b...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

A resistive memory formation and test method is disclosed. A memory array comprises a plurality of resistive storage units; a processing module is used for sequentially providing a first formation voltage and a second formation voltage for the resistive storage units so as to enable the resistive storage units to switch from an insulation state to an impedance state; the processing module provides a reset voltage to the resistive storage units so as to transform the impedance state of the resistive storage units to first impedance; the processing module provides a set voltage to the resistive storage units so as to transform the impedance state of the resistive storage units from the first impedance to second impedance; and the set voltage is higher than the second formation voltage, and the second formation voltage is higher than the first formation voltage.

Description

technical field [0001] The present invention relates to a resistive memory, in particular to a method for forming and testing a resistive memory capable of improving data retention performance. Background technique [0002] At present, flash memory (Flash) is the mainstream of non-volatile memory, but with the continuous shrinking of components, flash memory faces the problem of shortened storage time due to too thin gate penetration oxide layer, and excessive operating voltage. shortcoming. Therefore, various forms of non-volatile memory are actively being developed to replace flash memory, among which resistive random access memory (Resistive Random Access Memory, RRAM) achieves storage effect by changing the resistance value, and utilizes its non-volatile As a memory element with volatile characteristics, it has the advantages of small operating voltage, long storage time, multi-state storage, simple structure and small area. [0003] After the resistive memory is fabri...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G11C13/00G11C29/56
Inventor 林孟弘吴伯伦
Owner WINBOND ELECTRONICS CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap