Process for forming cobalt and cobalt silicide materials in tungsten contact applications
Inactive Publication Date: 2009-01-01
APPLIED MATERIALS INC
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[0029]In some examples, the reagent may contain a reducing agent, such as hydrogen, silane, disilane, diborane, ammonia, phosphine, derivatives thereof, plasmas thereof, or combinations thereof. The substrate may be exposed to a plasma during the treatment process. In other examples the apertures may be filled with a copper bulk layer by depositing copper therein and over the copper seed layer during a bottom-up deposition process, such as a PVD process, an ECP process, or an electroless deposition process.
[0030]In another embodiment, a
Problems solved by technology
However, it has been difficult to integrate cobalt silicide processes into conventional manufacturing equipment.
Transfer between chambers may expose the substrate to contamination and potential oxidation of silicon or cobalt deposited on the substrate surface.
Oxide formation on the surface of the substrate can result in increasing the resistance of silicide layers as well as reducing the reliability of the overall circuit.
For example, oxidation of the deposited cobalt material may result in cobalt agglomeration and irregular growth of the cobalt silicide layer.
The agglomeration and irregular growth of the cobalt silicide layer may result in device malformation, such as source and drain electrodes having different thicknesses and surface areas.
Additionally, excess cobalt silicide growth on substrate surface may form conductive paths between devices, which may result in short circuits and device failure.
However, the addition of titanium and titanium nitride deposition and removal processes increases the number of processing steps
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example 1
[0326]A substrate is treated with at least one preclean process to expose a silicon-containing surface, a cobalt silicide material is deposited over the silicon-containing surface, a metallic cobalt material is deposited over the cobalt silicide material, an optional treatment process may be used to remove cobalt oxides or other surface contaminants, a tungsten material is deposited over the metallic cobalt material, and the tungsten material is exposed to a CMP process. The metallic cobalt material and the cobalt silicide material may be deposited in a first processing chamber, and the optional treatment and the deposition of the tungsten material may be performed in a second processing chamber.
example 2
[0327]A substrate is treated with at least one preclean process to expose a silicon-containing surface, a cobalt silicide material is deposited over the silicon-containing surface, an optional treatment process may be used to remove cobalt oxides or other surface contaminants, a tungsten material (e.g., metallic tungsten) is deposited over the cobalt silicide material, and the tungsten material is exposed to a CMP process. The cobalt silicide material may be deposited in a first processing chamber and the optional treatment and the deposition of the tungsten material may be performed in a second processing chamber.
example 3
[0328]A substrate is treated with at least one preclean process to expose a silicon-containing surface, a cobalt silicide material is deposited over the silicon-containing surface, a metallic cobalt material is deposited over the cobalt silicide material, the substrate is exposed to an annealing process, an optional treatment process may be used to remove cobalt oxides or other surface contaminants, a tungsten material is deposited over the metallic cobalt material, and the tungsten material is exposed to a CMP process. The deposition of the metallic cobalt material and the cobalt silicide material and the annealing process may be performed in a first processing chamber, and the optional treatment and the deposition of the tungsten material may be performed in a second processing chamber.
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Abstract
Embodiments of the invention described herein generally provide methods for forming cobalt silicide layers and metallic cobalt layers by using various deposition processes and annealing processes. In one embodiment, a method for forming a metallic silicide containing material on a substrate is provided which includes forming a metallic silicide material over a silicon-containing surface during a vapor deposition process by sequentially depositing a plurality of metallic silicide layers and silyl layers on the substrate, depositing a metallic capping layer over the metallic silicide material, heating the substrate during an annealing process, and depositing a metallic contact material over the barrier material. In one example, the metallic silicide layers and the metallic capping layer both contain cobalt. The cobalt silicide material may contain a silicon/cobalt atomic ratio of about 1.9 or greater, such as greater than about 2.0, or about 2.2 or greater.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This application is a continuation-in-part of U.S. Ser. No. 11 / 733,929 (APPM / 005547.P2), filed Apr. 11, 2007, which claims benefit of U.S. Ser. No. 60 / 791,366 (APPM / 010948L), filed Apr. 11, 2006, and U.S. Ser. No. 60 / 863,939 (APPM / 010948L.02), filed Nov. 1, 2006, and which is also a continuation-in-part of U.S. Ser. No. 11 / 456,073 (APPM / 005547.C2), filed Jul. 6, 2006, which is a continuation of U.S. Ser. No. 10 / 845,970 (APPM / 005547.C1), filed May 14, 2004, and now abandoned, which is a continuation of U.S. Ser. No. 10 / 044,412 (APPM / 005547.P1), filed Jan. 9, 2002, and issued as U.S. Pat. No. 6,740,585, which is a continuation-in part of U.S. Ser. No. 09 / 916,234 (APPM / 005547), filed Jul. 25, 2001, and now abandoned, which are all herein incorporated by reference in their entirety.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]Embodiments of the invention relate to the fabrication of semiconductor and other electronic device...
Claims
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