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One-time programmable memor, electric system, electric fuse memory and method

A memory and electrical technology, applied in the field of programmable memory components, can solve problems such as unsuitability for applications, and achieve the effect of reducing size and cost, and reducing programming current

Active Publication Date: 2012-03-21
ATTOPSEMI TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Figure 3a and 3b The fuse assemblies 81 and 85 are relatively large structures, which makes them unsuitable for some applications

Method used

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  • One-time programmable memor, electric system, electric fuse memory and method
  • One-time programmable memor, electric system, electric fuse memory and method
  • One-time programmable memor, electric system, electric fuse memory and method

Examples

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Embodiment Construction

[0038] In an embodiment of the present invention, the P+ / N well junction diode acts as a program selector for the programmable resistive element. The diode can include P+ and N+ active regions in the N-well. Since the P+ and N+ active regions and the N-well are manufactured using off-the-shelf standard CMOS logic processes, these devices can be fabricated in an efficient and cost-effective manner without requiring additional masking or process steps to save costs. The programmable resistive element can be included in the electronic system.

[0039] Figure 4 Shown is a block diagram of a memory cell 30 using junction diodes in accordance with one embodiment. In particular, the memory cell 30 includes a resistor assembly 30a and a diode 30b. Resistive component 30a may be coupled between the anode of junction diode 30b and the positive voltage V+. The cathode of junction diode 30b may be coupled to negative voltage V-. In one embodiment, the memory cell 30 may be a fuse me...

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PUM

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Abstract

The present invention discloses a one-time programmable memory, an electric system, an electric fuse memory, a programmable resistance assembly memory and a method thereof, wherein the programmable resistance assembly memory comprising a plurality of programmable resistance memory units, the programmable resistance assembly is coupled to a first power supply voltage line; and a diode comprising at least a first active zone and a second active zone, wherein the first active zone is provided with a first type of doping, the second active zone is provided with a second type of doping, the first active zone provides a first end of the diode, the second active zone provides a second end of the diode, the first active zone and the second active zone are all located in a same hole, the first active zone is coupled to the programmable resistance assembly, and the second active zone is coupled to a second power supply voltage line. The first and second active zones are manufactured from the source electrode or the drain electrode of a complementary metal oxide semiconductor CMOS assembly, and the programmable resistance assembly is programmed through applying a voltage to the first and second power supply lines.

Description

technical field [0001] The invention relates to a programmable memory component, especially a programmable resistance component of a memory array, a one-time programmable memory, a programmable resistive component memory, an electronic system, an electric fuse memory and a method. Background technique [0002] Programmable resistive components generally mean that the resistive state of the component can be changed after programming. The resistance state can be determined by the resistance value. For example, the resistive component can be a One-Time Programmable (OTP) component (such as an e-fuse), and the programming method can apply a high voltage to generate a high current through the OTP component. When a high current flows through the OTP device by turning on the program selector, the OTP device will be programmed by firing into a high or low resistance state (depending on whether it is a fuse or an antifuse). [0003] Electrical fuse is a common OTP, and this program...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C17/16H10N50/01
CPCG11C11/1659
Inventor 庄建祥
Owner ATTOPSEMI TECH CO LTD
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