38 results about "Electron-beam technology" patented technology

The invention discloses a method for stress slowing release of TC4 titanium alloy additive manufacturing components based on double electron beams, and specifically refers to a method for controlling stress slow release of large-sized TC4 titanium alloy additive manufacturing components based on double electron beams, which relates to additive manufacturing field of manufacturing technology. The invention consists of the establishment and correction of the double electron beam temperature field model in step A, and the wire filling additive manufacturing in step B by using the double electron beams. The invention uses dual electron beam technology to control the phase transition in real time during the additive manufacturing process, and realizes the slow release of the stress of the large-scale TC4 titanium alloy additive manufacturing component by controlling the phase transition to improve the overall plasticity of the component. It is a large-scale TC4 The key technical problems in the manufacture of titanium alloy additive manufacturing components provide a new method, which improves the application potential of additive manufacturing technology in aviation, aerospace, petroleum, chemical industry, metallurgy and other fields, and provides a new method for additive manufacturing of other metal materials. Theory and technical guidance.

This invention proposes, among other things, systems and methods for providing ozone generators or plasma generators that generate an electric field in an electron generation chamber that is separate from a reaction chamber. An electron beam emitter in an electron generation chamber is configured to emit a beam of electrons and is separated from the reaction chamber by an electron permeable barrier that provides a window through which the beam of electrons passes. The electrons are accelerated to the required energy in the electron generation chamber and transmitted through the barrier to the reaction chamber, where an input gas source introduces an input gas into the reaction chamber. The input gas may react with the beam of electrons inside the reaction chamber to form an output gas comprising a plasma or a concentration of ozone, and the output gas passes from the reaction chamber to a wafer processing chamber.

The invention belongs to the technical field of power electronic conversion, and specifically relates to a bridgeless double-up soft-switching rectifier with the lowest loss in the auxiliary circuit, including a main circuit and an auxiliary circuit. The main circuit includes a first main switching tube and a first main rectifying diode , the drain of the first main switching tube and the anode of the first main rectifying diode are connected to point P to form the left bridge arm of the main circuit; the drain of the second main switching tube is connected to the anode of the second main rectifying diode The anodes are all connected to the Q point to form the right bridge arm of the main circuit; the source of the first main switching tube and the source of the second main switching tube are connected to the negative pole of the DC bus, and the first main rectifier diode Both the cathode and the cathode of the second main rectifier diode are connected to the anode of the DC bus. The invention realizes the zero-voltage turn-on of the main loop switch and the auxiliary loop switch, and the design of the absorbing capacitor reduces the turn-off loss and greatly improves the efficiency of the rectifier. The invention is used for rectification.

The invention discloses a cotton fabric hydrophobic finishing method based on an acrylics-modified silicon ball-electron beam technology, and belongs to the field of functional textiles. The method disclosed by the invention adopts an electron beam radiation technology, the method can react under room temperature, the energy consumption is low, an initiator does not need to be added, the reaction time is short, and the production cost can be obviously reduced; long-chain acrylic acid can be selected and used as monomers, so that the free energy of fabric surface can be obviously reduced, and meanwhile the environment-friendly problem easily generated by a fluorine-containing reagent is avoided; the roughness of the fabric surface can be improved through the addition of modified silicon dioxide, and meanwhile the problem, such as low adhesion caused by pure physical absorption, of silicon dioxide silicon balls is avoided. According to the method in which the lower surface energy is combined and the fabric surface roughness is improved, textiles with high hydrophobic performance are obtained through an electron beam one-step radiation graft polymerization technology.

The invention provides an integrated circuit design and manufacture method and an integrated circuit design system. The integrated circuit design and manufacturing method includes: receiving an integrated circuit layout file; and performing a reverse electron beam technology process on the integrated circuit layout file to generate a final mask pattern, wherein the reverse electron beam technology process uses a single reverse electron Beam technology models to simulate a mask process as well as wafer process.