Electron-beam physical vapor deposition process of preparing composite nano soft magnet and ceramic film

A physical vapor deposition and nanocomposite technology, applied in the field of soft magnetic thin film material manufacturing, can solve the problems of difficult DC magnetron sputtering, long thick film time, low deposition rate, etc.

Inactive Publication Date: 2006-07-19
BEIHANG UNIV
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The reason is that due to the high impedance of ceramic materials, it is difficult to prepare by DC magnetron sputtering method.
General

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0034] Hereby give the embodiment and describe in detail as follows:

[0035] The invention discloses a method for preparing a soft magnetic and ceramic nanocomposite thin film by electron beam physical vapor deposition. The iron (silicon)-zirconium dioxide nanocomposite thin film is prepared by electron beam physical vapor deposition. Iron-silicon alloy (FeSi) silicon (Si) content is 6.5% (weight percent), zirconium dioxide (ZrO 2 ) The diameter of the rod is 50 mm and the length is 200 mm; the substrate is copper (Cu); the vacuum degree is 5×10 -4 Pascal (Pa), the rotation speed of the substrate is 20 revolutions per minute (rpm), the temperature of the substrate is 350 ° C; the rising rate of the rod is 0.6 mm / min, the electron beam voltage: 18 kilovolts (kV), the electron beam current: 1.4 A ( A), the substrate is made of copper (Cu), the substrate is a disc sheet, the diameter is 340mm, the thickness is equal to 0.05mm, the deposition rate: 1 micron / min (metal); 1.2 micr...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

In the electron-beam physical vapor deposition process, double evaporation source and double electron-beam are used to evaporate metal and ceramic rod and the rotation speed of the substrate and the evaporation rate of both metal and ceramic are regulated to obtain nano composite film with different components. Specially, the process includes setting N6 or W on ferro-silicon alloy and Fe-Ni alloy rod, setting alloy rod and ceramic rod in two crucibles separately, installing substrate, pumping to required vacuum rotating the substrate, heating the substrate, evaporating alloy rod and ceramic rod separately, opening the baffle to deposit and other steps.

Description

(1) Technical field: [0001] The invention relates to a method for preparing a soft magnetic and ceramic nanocomposite thin film by electron beam physical vapor deposition, which belongs to the soft magnetic thin film material manufacturing technology. (two) background technology: [0002] Iron-based [iron-silicon alloy (FeSi), iron-nickel alloy (FeNi), etc.] soft magnetic materials have high saturation magnetization and permeability, low coercive force and resistivity; ceramic materials (zirconia (ZrO 2 ), aluminum oxide (Al 2 o 3 ), aluminum nitride (AlN), etc.) have high resistivity. Combining the two in the form of nanoparticles and controlling the mixing ratio can obtain soft magnetic properties with high impedance and low coercive force, and become the magnetic core material of various soft magnetic devices working under high-frequency alternating magnetic fields. [0003] According to the retrievable information, the above-mentioned composite systems usually have to...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C23C14/30
Inventor 毕晓昉宫声凯徐惠彬
Owner BEIHANG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products