9results about "Colour-separation/tonal-correction" patented technology

The present disclosure involves a method for performing an additive manufacturing operation to form a part, wherein the part is created from a photopolymer resist material. The method may involve generating a laser beam and directing the laser beam at a digital mask. The digital mask may be controlled to selectively create a beam having a subplurality of beamlets which form an image, and which each have sufficient intensity to cause polymerization of portions of the photopolymer resist material when illuminating the material. The beam may be collimated and the subplurality of beamlets then directed at the photopolymer resist material to simultaneously polymerize select portions of the photopolymer resist material.

A photographic film is formed by combining panchromatic black and white emulsion with a color filter array to produce a full color image using only black and white film and processing.

Provided in the present disclosure are a voltage control method for a phase change memory (PCM), a data reading method therefor, and a device, a storage medium and a program product. The data reading method comprises: acquiring writing and reading interval description information when an application performs an operation of first writing data and then reading the data on a PCM; on the basis of the description information, determining an initial voltage gear and a gear switching policy which are required when reading data from a storage unit of the PCM; and on the basis of the initial voltage gear and the gear switching policy, reading the data from the PCM. Writing and reading interval description information is taken into consideration in an initial voltage gear and a gear switching policy, such that a voltage drift factor can be reflected; and the initial voltage gear and the corresponding gear switching policy are determined, such that data can be read from a PCM on the basis of the initial voltage gear, and when reading at the initial voltage gear fails, rational voltage gear switching is performed on the basis of the gear switching policy.

The embodiment of the invention provides a data access method of a phase change memory, related equipment and a storage medium. In the embodiment of the invention, a small amount of SRAM (Static Random Access Memory) resources are added in a PCM (Pulse Code Modulation) controller, and in a writing stage, whether writing operation occurs in each coarse-grained unit time or not can be recorded by utilizing a bitmap provided by the SRAM; the Bloom filter provided by the SRAM can be used for recording whether write operation occurs in each fine-grained unit time or not. Therefore, in the subsequent reading stage, even under the condition of large bandwidth, the bitmap and the Bloom filter provided by the SRAM resource can be utilized to correctly distinguish the reading voltage of three gears designed for the phase change memory, so that the correct reading voltage responding to a read I / O request can be found at one time with a relatively large probability, the number of Read Retry times is remarkably reduced, and the reading efficiency of the phase change memory is improved. And the QoS of a service system using the phase change memory is greatly optimized under the condition that the time delay and bandwidth of the whole system are hardly influenced.

Provided in the present disclosure are a voltage control method for a phase change memory (PCM), a data reading method therefor, and a device, a storage medium and a program product. The data reading method comprises: acquiring writing and reading interval description information when an application performs an operation of first writing data and then reading the data on a PCM; on the basis of the description information, determining an initial voltage gear and a gear switching policy which are required when reading data from a storage unit of the PCM; and on the basis of the initial voltage gear and the gear switching policy, reading the data from the PCM. Writing and reading interval description information is taken into consideration in an initial voltage gear and a gear switching policy, such that a voltage drift factor can be reflected; and the initial voltage gear and the corresponding gear switching policy are determined, such that data can be read from a PCM on the basis of the initial voltage gear, and when reading at the initial voltage gear fails, rational voltage gear switching is performed on the basis of the gear switching policy.

The embodiment of the invention provides a voltage control and data reading method and device of a phase change memory, a storage medium and a program product. In the method, writing and reading interval description information when an application performs data writing-first and reading-second operation on the PCM can be obtained, an initial voltage gear and a gear switching strategy required when data is read from a storage unit of the PCM are determined according to the description information, and the data are read from the PCM based on the initial voltage gear and the gear switching strategy. Due to the fact that writing and reading interval description information is considered in the initial voltage gear and the gear switching strategy, the voltage drift factor can be reflected, the initial voltage gear is determined, the corresponding gear switching strategy is determined, data can be read from the PCM on the basis of the initial voltage gear, and data reading efficiency is improved. And when the reading of the initial voltage gear fails, reasonable voltage gear switching is carried out based on the gear switching strategy, so that the probability of successfully reading data from the PCM is improved, and the overall data reading efficiency is improved.

Embodiments of the present disclosure provide a data access method for a phase change memory (PCM), a related device, and a storage medium. A small amount of SRAM resources are added to a controller of a PCM. In a write stage, whether a write operation occurs in each coarse-grained unit time can be recorded by using a bitmap provided by an SRAM; and whether a write operation occurs in each fine-grained unit time can be recorded by using a Bloom filter provided by an SRAM. In a subsequent read stage, even in the case of a large bandwidth, the bitmap and the Bloom filter provided by the SRAM resources can be used to correctly distinguish three-level read voltages designed for the PCM, so that a correct read voltage in response to a read I / O request can be found in one pass with a large probability, thereby significantly reducing the number of read retries.

Techniques are provided for printing white underbase image data and highlight white image data in one pass using digital printing technologies. The techniques include increasing the white ink in the white only (or near white only) areas of the image data by combining the white underbase image data and the white ink (or near white ink) image data.

A system and method for nanofabrication that can enable complex three-dimensional nanostructures comprising: setting up a gel scaffold; patterning the gel scaffold with a photosensitive patterning material, wherein light is used to pattern the photosensitive patterning material into the gel scaffold to create the shape of a desired construct (i.e., creating a latent pattern of the desired constructs shape); depositing build material onto the latent pattern, thereby creating the construct; and shrinking the construct to the desired size. The system and method leverage the photosensitivity of the photosensitive molecule and high precision of light positioning for the fabrication of a high-resolution construct. The system and method may enable the fabrication of nano-constructs of simple and complex material designs, wherein the constructs may implement multiple distinct build materials and gradients of build materials.