Method for preparing Hf0.5Zr0.5O2 ferroelectric film by ALD for ferroelectric memory applications

A ferroelectric memory, ferroelectric thin film technology, applied in capacitors, electric solid devices, circuits, etc., can solve the problems of complex process, high preparation cost, large device size, etc., to simplify the preparation process and achieve uniform ferroelectricity of the thin film. , the effect of wide application prospects
CN110165053APending Publication Date: 2019-08-23INT ACAD OF OPTOELECTRONICS AT ZHAOQING SOUTH CHINA NORMAL UNIV
4 Cites 15 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
INT ACAD OF OPTOELECTRONICS AT ZHAOQING SOUTH CHINA NORMAL UNIV
Publication Date
2019-08-23

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention discloses a method for preparing a Hf0.5Zr0.5O2 ferroelectric film by ALD for ferroelectric memory applications, characterized by preparing the ferroelectric film by using atomic layer deposition, using a hafnium source and a zirconium source as reaction precursors, using ozone or water as an oxygen source, using a cavity temperature of 250 to 280 degrees centigrade, and using a reaction precursor heating temperature of 75 to 80 degrees centigrade. Compared with a ferroelectric film having a perovskite structure obtained by a conventional process, the ferroelectric film preparedby the method is more liable to be compatible with a standard semiconductor manufacturing process, has higher integration, a lower annealing temperature, a higher annealing rate, shorter annealing time, and a lower ferroelectric layer thickness. The film obtained by a high annealing rate heat treatment process has high remanent polarization, a large dielectric constant, and low leakage current. The preparation method of the invention has high repeatability and can obtain uniform ferroelectric film, and contributes to realizing the wide application prospect of the ferroelectric film in the fields of information storage and integrated circuits.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention belongs to the technical field of conductive materials, and in particular relates to an ALD preparation method for ferroelectric memory applications. 0.5 Zr 0.5 o 2 method for ferroelectric thin films. Background technique

[0002] Hafnium dioxide thin film is a high dielectric constant (High-K) material, which has the advantages of wide energy band gap and good compatibility with CMOS (Complementary Metal-Oxide-Semiconductor Transistor) process, and is widely used in micro Preparation of dielectric insulating materials in electronic devices. In recent years, studies have successively found that the dielectric material HfO 2 Doping with different elements will produce ferroelectricity, which can be used to prepare hafnium-based ferroelectric thin films. The traditional perovskite structure of Pb(Zr,Ti)O 3 (PZT), SrBi 2 Ta 2 o 9 (SBT) and other ferroelectric films, the development of ferroelectric memory is limited by factors such...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More