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Method for preparing Nd/Co-codoped BiFeO3 film on FTO (fluorine-doped tin oxide)/glass substrate surface

A substrate surface, thin film technology, applied in solid-state chemical plating, metal material coating process, coating and other directions, can solve the problems of unsaturated hysteresis loop, limited application, large leakage conductance, etc., and achieve doping The effect of easy control of quantity, improved dielectric properties, and simple equipment requirements

Inactive Publication Date: 2012-07-04
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, BiFeO 3 There is a problem of large leakage conductance, which prevents him from obtaining a saturated hysteresis loop and limits its application

Method used

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  • Method for preparing Nd/Co-codoped BiFeO3 film on FTO (fluorine-doped tin oxide)/glass substrate surface
  • Method for preparing Nd/Co-codoped BiFeO3 film on FTO (fluorine-doped tin oxide)/glass substrate surface
  • Method for preparing Nd/Co-codoped BiFeO3 film on FTO (fluorine-doped tin oxide)/glass substrate surface

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Step 1: Select the FTO / glass substrate as the substrate, place the cut FTO substrate in detergent, acetone, and ethanol for ultrasonic cleaning, rinse the substrate with a large amount of distilled water after each ultrasonic cleaning, and finally blow it with nitrogen.

[0029] Step 2: Bake the FTO / glass substrate in a 70°C oven for 20 minutes, take it out and let it stand at room temperature.

[0030] Step 3: Place the clean FTO / glass substrate in a UV irradiator for 40 minutes to make the surface of the substrate reach "atomic cleanliness".

[0031] Step 4: Bi(NO 3 ) 3 9H 2 O, Fe(NO 3 ) 3 ·5H 2 O, Nd(NO 3 ) 3 ·6H 2 O and Co(NO 3 ) 2 ·6H 2 O is dissolved in a mixture of ethylene glycol methyl ether and acetic anhydride at a molar ratio of 0.98:0.99:0.1:0.01, and magnetically stirred for 1 hour to obtain a stable metal ion concentration of 0.1-0.5mol / L BiFeO 3 Precursor solution, wherein the volume ratio of ethylene glycol methyl ether and acetic anhydride ...

Embodiment 2

[0035]Step 1: Select the FTO / glass substrate as the substrate, place the cut FTO substrate in detergent, acetone, and ethanol for ultrasonic cleaning, rinse the substrate with a large amount of distilled water after each ultrasonic cleaning, and finally blow it with nitrogen.

[0036] Step 2: Bake the FTO / glass substrate in a 70°C oven for 20 minutes, take it out and let it stand at room temperature.

[0037] Step 3: Place the clean FTO / glass substrate in a UV irradiator for 40 minutes to make the surface of the substrate reach "atomic cleanliness".

[0038] Step 4: Bi(NO 3 ) 3 9H 2 O, Fe(NO 3 ) 3 ·5H 2 O, Nd(NO 3 ) 3 ·6H 2 O and Co(NO 3 ) 2 ·6H 2 O is dissolved in a mixture of ethylene glycol methyl ether and acetic anhydride at a molar ratio of 0.98:0.97:0.1:0.03, and magnetically stirred for 1 hour to obtain a stable metal ion concentration of 0.1-0.5mol / L BiFeO 3 Precursor solution, wherein the volume ratio of ethylene glycol methyl ether and acetic anhydride i...

Embodiment 3

[0042] Step 1: Select the FTO / glass substrate as the substrate, place the cut FTO substrate in detergent, acetone, and ethanol for ultrasonic cleaning, rinse the substrate with a large amount of distilled water after each ultrasonic cleaning, and finally blow it with nitrogen.

[0043] Step 2: Bake the FTO / glass substrate in a 70°C oven for 20 minutes, take it out and let it stand at room temperature.

[0044] Step 3: Place the clean FTO / glass substrate in a UV irradiator for 40 minutes to make the surface of the substrate reach "atomic cleanliness".

[0045] Step 4: Bi(NO 3 ) 3 9H 2 O, Fe(NO 3 ) 3 ·5H 2 O, Nd(NO 3 ) 3 ·6H 2 O and Co(NO 3 ) 2 ·6H 2 O is dissolved in a mixture of ethylene glycol methyl ether and acetic anhydride at a molar ratio of 0.98:0.95:0.1:0.05, and magnetically stirred for 1 hour to obtain a stable metal ion concentration of 0.1-0.5mol / L BiFeO 3 Precursor solution, wherein the volume ratio of ethylene glycol methyl ether and acetic anhydride ...

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Abstract

The invention provides a method for preparing an Nd / Co-codoped BiFeO3 film on an FTO (fluorine-doped tin oxide) / glass substrate surface, which comprises the following steps: after cleaning an FTO substrate, carrying out ultraviolet irradiation, and dissolving bismuth nitrate (8% excessive), ferric nitrate, neodymium nitrate and cobalt nitrate which serve as raw materials in mixed ethylene glycol monomethyl ether and acetic anhydride in a mol ratio of 0.98:(1-x):0.1:x (x=0.01-0.05), thereby obtaining a stable BiFeO3 precursor solution of which the metallic ion concentration is 0.1-0.5mol / L; and after spin coating, drying to obtain a dry film, preannealing, naturally cooling, repeating the process above to obtain the film with expected thickness, and finally, annealing to obtain the crystalline BiFeO3 film. In the invention, the facility requests are simple, the experiment conditions can be easily achieved, the prepared film has good uniformity, the doping amount is easy to control, andthe dielectric properties of the film can be greatly enhanced by doping.

Description

technical field [0001] The invention belongs to the field of functional materials and relates to the preparation of Nd and Co co-doped BiFeO on the surface of a functionalized FTO / glass substrate 3 method for ferroelectric thin films. Background technique [0002] In recent years, BiFeO 3 As a new type of ferromagnetic electric material, it has aroused great interest. BiFeO 3 The simple perovskite structure with trigonal twist has both ferroelectric order (TC = 810°C) and G-type antiferromagnetic order (T N =380℃), is one of the few single-phase multiferroic materials. BiFeO 3 Magnetoelectric couplings have extremely important application prospects in information storage, spintronic devices, magnetic sensors, and capacitive-inductive integrated devices. [0003] However, BiFeO 3 There is a problem of large leakage conductance, which prevents him from obtaining a saturated hysteresis loop and limits its application. BiFeO 3 The leakage conduction problem is mainly re...

Claims

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Application Information

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IPC IPC(8): C23C20/08
Inventor 谈国强薛旭
Owner SHAANXI UNIV OF SCI & TECH
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