2results about How to "Increase effective area" patented technology

The utility model relates to a semiconductor device and its packaging technical field, specifically disclose a kind of module terminal and HPD packaging module using laminated busbar structure, including DC terminal, DC terminal includes: two ends and chip and direct current power supply intercommunication's first component and second component, first component and second component current is opposite;First component and second component form laminated busbar structure to offset reverse current magnetic field, the partial area of first component and the overall area of second component overlap to expand magnetic field offset effective area.The utility model forms laminated busbar structure by setting first component and second component, offset the magnetic field generated by reverse current, secondly, the projection area of second component is the effective overlapping area of first component and second component, to expand the effective area of magnetic field offset as far as possible, to reduce total magnetic flux without affecting laser welding, to reduce stray inductance, improve system reliability.

The purpose of the present invention is to provide a technique capable of increasing the effective area of a semiconductor device and reducing the delay of a gate signal. A semiconductor device (100) is provided with: a semiconductor substrate (1) in which an active region (2) and a terminal region (3), which is a region outside the active region, are defined; a first gate pad (4) disposed in the center of the first side of the active region; a first gate wiring (5) connected to the first gate pad and extending in the first direction; a first gate signal line connected to the first gate pad or the first gate wiring and extending in the second direction; a second gate pad (14) disposed at a corner of the first side of the active region; a second gate wiring (15) connected to the second gate pad and having a portion extending in the first direction; and a second gate signal line connected to the second gate pad or the second gate wiring and extending in the second direction. The second gate wiring extends along the boundary between the active region and the termination region.