Method for growing AIN or AlGaN film

A thin film and epitaxial growth technology, which is applied in metal material coating process, coating, gaseous chemical plating, etc., can solve the problems of complex growth process and harsh conditions of buffer layer, so as to improve luminescence characteristics, improve crystal quality and Surface flatness, effect of improving surface topography

Inactive Publication Date: 2009-12-16
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] As reported in Chinese patent application 200610019545.2, the low-temperature and high-temperature composite buffer layer method improves the crystal qualit

Method used

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  • Method for growing AIN or AlGaN film
  • Method for growing AIN or AlGaN film
  • Method for growing AIN or AlGaN film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] Prepare AlN thin films according to the following steps:

[0023] 1) Raise the temperature of the reaction chamber to 1060°C, and bake the sapphire (0001) substrate in a hydrogen atmosphere for 15 minutes;

[0024] 2) The temperature was raised to 1200° C., the flow rate of TMIn was set to 180 sccm, the pressure was 50 torr, the V / III was 400, and a 600 nm AlN film was grown on a sapphire substrate at a growth rate of 400 nm per hour.

[0025] The XRD (002) plane 2θ-ω scanning results of the AlN samples grown by this special method in an atmosphere containing TMIn and the AlN film grown directly on a sapphire substrate without an atmosphere of TMIn are as follows: figure 1 shown. Depend on figure 1 It can be seen that the XRD peak position does not change significantly, indicating that TMIn only acts as an active agent during the growth of AlN, but does not participate in the formation of components. The AFM morphology comparison of AlN grown in an atmosphere contain...

Embodiment 2

[0027] Prepare AlN thin films according to the following steps:

[0028] 1) Raise the temperature of the reaction chamber to 1060°C, and bake the sapphire (001) substrate in a hydrogen atmosphere for 15 minutes;

[0029] 2) Raise the temperature to 1200°C, and grow an AlN buffer layer with a thickness of 100nm for 100 cycles on the sapphire substrate at a growth rate of 200nm per hour by pulsed atomic layer epitaxy. The growth conditions are: pressure 150torr, V / III 600, In each cycle, 5s TMAl, 3s hydrogen, 5s NH are injected sequentially 3 , 3s hydrogen;

[0030] 3) keep the temperature constant, on the basis of step 2), the flow rate of TMIn is set to 180sccm, using TMAl, TMIn and NH 3 At the same time, the method of feeding into the reaction chamber grows an AlN film at a growth rate of 400nm per hour, with a thickness of 600nm, and the specific growth conditions are: pressure 50torr, V / III 400.

[0031] The AFM of the AlN sample obtained by this special method and the A...

Embodiment 3

[0033] Prepare AlGaN thin films according to the following steps:

[0034]1) Raise the temperature of the reaction chamber to 1060°C, and bake the sapphire (0001) substrate in a hydrogen atmosphere for 15 minutes;

[0035] 2) Raise the temperature of the reaction chamber to 1200°C, and directly grow a 320nm AlN film on the sapphire substrate at a growth rate of 1.4 μm per hour. The growth conditions are: pressure 50torr, V / III 400;

[0036] 3) On the basis of step 2), keep the temperature constant and grow AlN / Al for 10 cycles x Ga 1-x N superlattice, in which the thickness of the well and the barrier in the superlattice are both 5nm, and the Al composition x is controlled at 0.8. During the growth process, the pressure is 75torr, and V / III is 600;

[0037] 4) keep the growth temperature constant, on the basis of step 3), the flow rate of TMIn is set to 240sccm, using TMAl, TMGa, TMIn and NH 3 Simultaneous access to the reaction chamber method to grow Al at a growth rate of...

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Abstract

The invention provides a method for growing an AIN or AlGaN film, and the method is described as follows: proper TMIn is led into and used as active agent to improve the crystal quality and the surface planeness of the AIN or AlGaN film during using the metal organic chemical gas phase deposition method to grow AIN or AlGaN film. The method comprises the following steps: generally using hydrogen as carrier gas and taking TMGa, TMAl and NH3 respectively as a Ga source, an Al source and an N source; leading the TMIn and other raw materials into a reaction chamber together at the same time to grow under the temperature of 1050-1200 DEG C, wherein the flow of the TMIn is usually 40-400sccm. The surface roughness of a sample is shown by adopting an atomic power micro method and the crystal quality of the sample is shown by adopting X-ray to diffract tricrystal rocking curve peak half-width, the result shows that: compared the AIN and AlGaN sample prepared by the method with the sample grown by adopting the prior art, the surface roughness is lowered obviously, and the crystal quality is improved.

Description

technical field [0001] The invention relates to the technical field of metal organic chemical vapor deposition (MOCVD), in particular to a preparation method of AlN and AlGaN thin films with high Al composition. Background technique [0002] Group III nitride semiconductor ternary alloy AlGaN materials can be widely used in short-wavelength deep ultraviolet (UV) light emission, detection and white light illumination LEDs because their band gap can be continuously adjusted from 3.42eV to 6.2eV. Ultraviolet detection technology is another dual-use photoelectric detection technology developed after infrared and laser detection technology. Sunlight-blind deep ultraviolet detectors can effectively detect flying targets that release a large amount of ultraviolet radiation from the plume or plume, such as missiles and jet aircraft. During the flight, a large amount of ultraviolet radiation will inevitably be released from the tail flame or plume flame, which provides an extremely ...

Claims

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Application Information

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IPC IPC(8): C23C16/18C23C16/34C23C16/52
Inventor 张国义桑立雯秦志新杨志坚于彤军方浩
Owner PEKING UNIV
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