Self-repairing type grid drive circuit

Abstract

The present invention relates to a self-repairing type grid drive circuit. The self-sepairing type grid drive circuit includes a plurality of cascaded GOA units, wherein the n-th stage GOA unit comprises a pull-up control circuit (100), a pull-up circuit (200), a download circuit (300), a pull-down circuit (400), a bootstrap capacitor (500), a first pull-down holding circuit (600), a second pull-down holding circuit (700), and a bridge circuit (800). The bridge circuit (800) comprises a first thin film transistor (T55), wherein a grid electrode is connected to the grid signal point (Q (N)), a drain electrode and a source electrode are respectively connected to a first circuit point (K (N)) and a second circuit point (P (N)). When operating, the first circuit point (K (N)) and the second circuit point (P (N)) are alternately arrange on a high potential. The self-repairing type grid drive circuit of the present invention can reduce the failure risk of the pull-down holding circuit caused by a long time operation of production process or GOA circuit, thereby realizing the self-repairing function of the circuit.

Description

technical field [0001] The invention relates to the field of liquid crystal technology, in particular to a self-repairing gate drive circuit. Background technique [0002] Gate Driver On Array (GOA for short), that is, using the existing thin-film transistor liquid crystal display array (Array) manufacturing process to manufacture the gate (Gate) row scanning drive signal circuit on the array substrate to realize gate driver on array. The driving mode of row scanning. [0003] Existing GOA circuits generally include a plurality of cascaded GOA units, and each level of GOA units corresponds to driving one level of horizontal scanning lines. The main structure of the GOA unit includes a pull-up circuit (Pull-up part), a pull-up control circuit (Pull-up control part), a download circuit (Transfer Part), a pull-down circuit (Key Pull-down Part) and a pull-down maintenance circuit ( Pull-down Holding Part), and the bootstrap (Boast) capacitor responsible for the potential rise....

AI Technical Summary

Problems solved by technology

[0005] 1. In practical applications, it is found that the pull-down maintenance part of the GOA circuit is most susceptible to long-term stress (Stress), which makes some key thin-film transistors (TFT) fail, which increases the failure risk of the GOA circuit, and due to the current The designed GOA circuit does not have the repair function, which greatly increases the probability of this risk;

[0006] 2. In the GOA process, due to the large number of circuit stages and the large number of TFTs, it is easy to have some risks of TFT short circuit or open circuit, especially in the pull-down maintenance circuit. If such a phenomenon occurs, the pull-down maintenance circuit will always be on or off. state, which affects the output of the Gate waveform, and the repair of the GOA circuit is difficult, which will seriously affect the yield rate of the LCD panel output;

[0007] 3. The actual GOA circuit has a large resistance-capacitance (RC) load that will seriously affect the delay phenomenon of the Gate waveform. Therefore, how to reduce the gate delay (Gate Delay) in the GOA circuit is also a problem that is generally concerned at present, and the pull-down The quality of maintaining the closed state of the circuit during the action of the Gate waveform output will directly affect the delay of the Gate waveform (Delay)

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