Ultra-low power consumption polymorphic spinning nano device based on artificial antiferromagnetic structure

Abstract

The invention provides an ultra-low power consumption polymorphic spin nano device based on artificial antiferromagnetic structures, which comprises spin units arranged in an array, in a horizontal plane, each spin unit comprises an artificial antiferromagnetic structure arranged diagonally and an artificial ferromagnetic structure arranged diagonally, and the two artificial antiferromagnetic structures are connected with each other. The artificial antimagnet structure is an input end, and the artificial ferromagnetic structure is an output end; the artificial antiferromagnetic structure comprises a first ferromagnetic sub-layer, a first non-magnetic layer and a first top ferromagnetic layer which are sequentially arranged on one side of the electrode wire in the direction perpendicular to the horizontal plane; and the artificial ferromagnetic structure comprises a second non-magnetic layer, a second ferromagnetic sub-layer and a second top ferromagnetic layer which are sequentially arranged on one side of the electrode wire. According to the invention, the artificial antiferromagnetic structure is used as an input end, and the magnetization flipping field intensity is reduced by regulating and controlling the interlayer exchange coupling effect of the first ferromagnetic sub-layer, so that the driving current density of the spinning nano device is remarkably reduced, and the power consumption is further reduced.

Description

Technical Field

[0001] The present invention relates to the technical field of magnetic devices, and in particular to an ultra-low power consumption multi-state spin nanodevice based on an artificial antiferromagnetic structure. Background Art

[0002] The discovery of the spin-orbit torque (SOT) effect is a significant milestone in the development of spin electronics. This effect is based on strong spin-orbit coupling in heavy metal materials. When current flows through a heavy metal layer, a spin current is generated via the spin Hall effect. These electrons, with aligned spin orientations, can drive the magnetization reversal of the adjacent ferromagnetic layer. Compared to traditional electrically controlled magnetic schemes based on the Lorentz force and spin transfer torque (STT), SOT-type magnetic random access memory devices have unique advantages: the physical separation of their read and write paths significantly reduces the average current density during device operation, protecting the device from prolonged Joule heating, thereby significantly improving the device's stability and service life. Furthermore, thanks to the inherent non-volatility and high-speed read and write characteristics of spintronic devices, the SOT effect demonstrates significant application value in areas such as in-memory computing architectures, neuromorphic algorithms, and complex logic operations.

[0003] Heavy metal / ferromagnetic (HM / FM) bilayers with perpendicular magnetic anisotropy (PMA) are key to developing efficient SOT devices. PMA not only confers excellent thermal stability and scalability, but also helps reduce the size of magnetic storage cells and the magnetization switching rate. However, current SOT devices still face numerous challenges, including excessively high critical switching current density, the need to optimize thermal stability and write speed, and dependence on external magnetic fields. Summary of the Invention

[0004] The purpose of the present invention is to provide an ultra-low power consumption multi-state spin nanodevice based on an artificial antiferromagnetic structure to solve the problems existing in the prior art.

[0005] In order to solve the above technical problems, the present invention provides the following technical solutions: an ultra-low power consumption multi-state spin nanodevice based on an artificial antiferromagnetic structure, comprising spin units arranged in an array, wherein in a horizontal plane, the spin units include diagonally arranged artificial antiferromagnetic structures and diagonally arranged artificial ferromagnetic structures, two of the artificial antiferromagnetic structures are interconnected with two of the artificial ferromagnetic structures, the artificial antiferromagnetic structure is an input end, and the artificial ferromagnetic structure is an output end;

[0006] Along the direction perpendicular to the horizontal plane, the artificial antiferromagnetic structure includes a first ferromagnetic sublayer, a first non-magnetic layer and a first top ferromagnetic layer sequentially arranged on one side of the electrode line; the artificial ferromagnetic structure includes a second non-magnetic layer and a second ferromagnetic sublayer and a second top ferromagnetic layer sequentially arranged on one side of the electrode line.

[0007] Furthermore, the first ferromagnetic sublayer includes a first bottom ferromagnetic layer and a first soft ferromagnetic layer sequentially arranged on one side of the electrode line.

[0008] Furthermore, the artificial ferromagnetic structure further includes a second soft ferromagnetic layer provided on a side of the second non-magnetic layer close to the electrode wire.

[0009] Furthermore, the materials of the first soft ferromagnetic layer and the second soft ferromagnetic layer each independently include at least one of nickel, iron and cobalt.

[0010] Furthermore, the diagonally arranged artificial antiferromagnetic structure includes a first artificial antiferromagnetic structure and a second artificial antiferromagnetic structure, and the diagonally arranged artificial ferromagnetic structure includes a first artificial magnet structure and a second artificial ferromagnetic structure;

[0011] The first top ferromagnetic layer in the first artificial antiferromagnetic structure is connected to the second top ferromagnetic layer in the first artificial ferromagnetic structure through a first bridge structure, and is connected to the second top ferromagnetic layer in the second artificial ferromagnetic structure through a second bridge structure;

[0012] The first bottom ferromagnetic layer in the second artificial antiferromagnetic structure is connected to the second ferromagnetic sublayer in the first artificial ferromagnetic structure through a third bridge structure, and is connected to the second ferromagnetic sublayer in the second artificial ferromagnetic structure through a fourth bridge structure.

[0013] Furthermore, the electrode wire includes a first electrode wire and a second electrode wire;

[0014] The first electrode line is provided through the bottom of the first artificial antiferromagnetic structure and the bottom of the first artificial ferromagnetic structure;

[0015] The second electrode line is arranged through the bottom of the second artificial antiferromagnetic structure and the bottom of the second artificial ferromagnetic structure.

[0016] Furthermore, the first electrode line includes a first input end, a second input end, and a first output end, the first input end is provided at the head of the first electrode line, the second input end is provided at the first electrode line between the bottom of the first artificial antiferromagnetic structure and the bottom of the first artificial ferromagnetic structure, and the first output end is provided at the tail of the first electrode line;

[0017] The second electrode line includes a third input end, a fourth input end and a second output end. The third input end is arranged at the head of the second electrode line, the fourth input end is arranged at the second electrode line between the bottom of the second artificial antiferromagnetic structure and the bottom of the second artificial ferromagnetic structure, and the second output end is arranged at the tail of the second electrode line.

[0018] Furthermore, the applied current density ranges of the first input terminal, the second input terminal, the third input terminal and the fourth input terminal are all ±1.5×1011 A / m2 to ±1.0×1012 A / m2.

[0019] Furthermore, the materials of the first top ferromagnetic layer, the second ferromagnetic sublayer, the second top ferromagnetic layer and the first bottom ferromagnetic layer, as well as the first bridge structure, the second bridge structure, the third bridge structure and the fourth bridge structure all include Co / Pt multilayer films.

[0020] Furthermore, the materials of the first non-magnetic layer and the second non-magnetic layer both include ruthenium.

[0021] Compared with the prior art, the present invention has the following beneficial effects:

[0022] (1) By using an artificial antiferromagnetic structure as the input end and regulating the interlayer exchange coupling of the first ferromagnetic sublayer to reduce the magnetization reversal field strength, the driving current density of the spin nanodevice is significantly reduced, thereby reducing power consumption and enhancing reliability.

[0023] (2) By constructing an artificial ferromagnetic structure at the information reading end, the magnetization consistency reversal characteristics of ferromagnetic coupling can be used to overcome the magnetic moment compensation problem of the artificial antiferromagnetic structure, which can enhance the easy detection characteristics of the magnetization state of the artificial ferromagnetic.

[0024] (3) The magnetization states of the dual input ends of the diagonally arranged artificial antiferromagnetic structure are used to induce the ferromagnetic output end to form different magnetization combination output states, which can form four output states: (1,1), (1,0), (0,1) and (0,0) to meet higher storage requirements.

[0025] (4) The first and second soft ferromagnetic layers serve as in-plane magnetization layers, which can break the spatial symmetry and realize the current-driven magnetization process with zero external magnetic field assistance.

[0026] The present invention will be explained in detail below with reference to the accompanying drawings and specific embodiments. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 Schematic diagram of the structure of the spin unit of the present invention;

[0028] Figure 2 A schematic diagram of current flow directions of the first electrode wire and the second electrode wire of the present invention;

[0029] Figure 3 (a) Schematic diagram of the current operation scheme for implementing four-state output;

[0030] Figure 3 (b) Schematic diagram of the input current scheme and the corresponding output magnetization state;

[0031] Figure 4 (a) Hysteresis loops of the artificial antiferromagnetic structure, the first ferromagnetic sublayer, and the first top ferromagnetic layer.

[0032] Figure 4 (b) Artificial antiferromagnetic structure at -1.5×10 11 A / m 2 and -1.0×10 12 A / m 2 Magnetization dynamics under current driving;

[0033] Figure 4 (c) mx, my and mz are the magnetization components in the x, y and z axes in the artificial antiferromagnetic structure;

[0034] Figure 5 (a) Hysteresis loops of the artificial ferromagnetic structure, the second ferromagnetic sublayer, and the second top ferromagnetic layer;

[0035] Figure 5 (b) Artificial ferromagnetic structure at -1.5×10 11 A / m 2 and -1.0×10 12 A / m 2 Magnetization dynamics under current driving;

[0036] Figure 5 (c) The mx, my and mz of the artificial ferromagnetic structure are the magnetization components in the x, y and z axes.

[0037] In the picture:

[0038] 11-first artificial antiferromagnetic structure; 12-second artificial antiferromagnetic structure; 13-first ferromagnetic sublayer; 131-first bottom ferromagnetic layer; 132-first soft ferromagnetic layer; 14-first non-magnetic layer; 15-first top ferromagnetic layer;

[0039] 21-first artificial ferromagnetic structure; 22-second artificial ferromagnetic structure; 23-second non-magnetic layer; 24-second ferromagnetic sublayer; 25-second top ferromagnetic layer; 26-second soft ferromagnetic layer;

[0040] 31-first bridge structure; 32-second bridge structure; 33-third bridge structure; 34-fourth bridge structure;

[0041] 4-first electrode line; 41-first input terminal; 42-second input terminal; 43-first output terminal;

[0042] 5 - second electrode line; 51 - third input terminal; 52 - fourth input terminal; 53 - second output terminal. DETAILED DESCRIPTION

[0043] To facilitate understanding of the present invention, the present invention will be described more comprehensively below with reference to the relevant drawings. Several embodiments of the present invention are given in the drawings. However, the present invention can be implemented in different forms and is not limited to the embodiments described in the text. On the contrary, these embodiments are provided to make the content disclosed in the present invention more thorough and comprehensive.

[0044] It should be noted that when an element is referred to as being "fixed on" another element, it may be directly on the other element or there may be a central element. When an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be a central element at the same time. The terms "vertical", "horizontal", "left", "right" and similar expressions used in this article are for illustrative purposes only.

[0045] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly associated with those skilled in the art to which the present invention pertains. The terminology used herein in the specification of the present invention is for the purpose of describing specific embodiments and is not intended to limit the present invention. The term "and / or" used herein includes any and all combinations of one or more of the related listed items.

[0046] The embodiment of the present application provides an ultra-low power consumption multi-state spin nanodevice based on an artificial antiferromagnetic structure, including array-arranged spin units, such as Figure 1 As shown, the spin unit includes an artificial antiferromagnetic structure and an artificial ferromagnetic structure arranged diagonally, the two artificial antiferromagnetic structures and the two artificial ferromagnetic structures are interconnected, the artificial antiferromagnetic structure is the input end, and the artificial ferromagnetic structure is the output end.

[0047] Along the direction perpendicular to the horizontal plane, the artificial antiferromagnetic structure includes a first ferromagnetic sublayer 13, a first non-magnetic layer 14 and a first top ferromagnetic layer 15 arranged in sequence on one side of the electrode line; the artificial ferromagnetic structure includes a second non-magnetic layer 23 and a second ferromagnetic sublayer 24 and a second top ferromagnetic layer 25 arranged in sequence on one side of the electrode line.

[0048] In this embodiment, an artificial antiferromagnetic structure is used as the input end, and the interlayer exchange coupling of the first ferromagnetic sublayer 13 is regulated to reduce the magnetization reversal field strength, so that the driving current density of the spin nanodevice is significantly reduced, thereby reducing power consumption and enhancing reliability. In addition, by constructing an artificial ferromagnetic structure at the information reading end, the magnetic consistency reversal characteristics of the ferromagnetic coupling can be used to overcome the magnetic moment compensation problem of the artificial antiferromagnetic structure, which can enhance the easy detection characteristics of the magnetization state of the artificial ferromagnetism. Moreover, the magnetization state of the dual input ends of the diagonally arranged artificial antiferromagnetic structure is used to induce the ferromagnetic output end to form different magnetization combination output states, which can form four output states of (1,1), (1,0), (0,1) and (0,0) to meet higher storage requirements.

[0049] In the artificial antiferromagnetic structure, the thickness of the first non-magnetic layer 14 can be controlled to achieve the transition of the coupling between the first ferromagnetic sublayers 13 from the antiferromagnetic state to the ferromagnetic state.

[0050] Optionally, two artificial antiferromagnetic structures and two artificial ferromagnetic structures are integrated in a 90×90nm 2 The four corner positions of a square device.

[0051] Optionally, the first ferromagnetic sublayer 13 includes a first bottom ferromagnetic layer 131 and a first soft ferromagnetic layer 132 which are sequentially arranged on one side of the electrode line.

[0052] In this embodiment, the first soft ferromagnetic layer 132 serves as an in-plane magnetization layer, which can break the spatial symmetry and realize a current-driven magnetization process assisted by zero external magnetic field.

[0053] Optionally, the artificial ferromagnetic structure further includes a second soft ferromagnetic layer 26 provided on a side of the second non-magnetic layer 23 close to the electrode line.

[0054] In this embodiment, the second soft ferromagnetic layer 26 may also serve as an in-plane magnetization layer to further enhance the current-driven magnetization process assisted by zero external magnetic field.

[0055] Optionally, the materials of the first soft ferromagnetic layer 132 and the second soft ferromagnetic layer 26 each independently include at least one of nickel, iron, and cobalt.

[0056] Preferably, the materials of the first soft ferromagnetic layer 132 and the second soft ferromagnetic layer 26 are both nickel.

[0057] Optionally, the diagonally arranged artificial antiferromagnetic structure includes a first artificial antiferromagnetic structure 11 and a second artificial antiferromagnetic structure 12 , and the diagonally arranged artificial ferromagnetic structure includes a first artificial magnet structure 21 and a second artificial ferromagnetic structure 22 .

[0058] The first top ferromagnetic layer 15 in the first artificial antiferromagnetic structure 11 is connected to the second top ferromagnetic layer 25 in the first artificial ferromagnetic structure 21 through the first bridge structure 31 , and is connected to the second top ferromagnetic layer 25 in the second artificial ferromagnetic structure 22 through the second bridge structure 32 .

[0059] The first bottom ferromagnetic layer 131 in the second artificial antiferromagnetic structure 12 is connected to the second ferromagnetic sublayer 24 in the first artificial ferromagnetic structure 21 through the third bridge structure 33 , and is connected to the second ferromagnetic sublayer 24 in the second artificial ferromagnetic structure 22 through the fourth bridge structure 34 .

[0060] In this embodiment, the first bridge structure 31 and the second bridge structure 32 are located in the same plane, the third bridge structure 33 and the fourth bridge structure 34 are located in the same plane, and the first bridge structure 31 and the second bridge structure 32 and the third bridge structure 33 and the fourth bridge structure 34 are located in different planes, which can minimize the interference between the first artificial antiferromagnetic structure 11 and the second artificial antiferromagnetic structure 12 and ensure the accuracy of the results.

[0061] Optionally, the electrode wires include a first electrode wire 4 and a second electrode wire 5 .

[0062] The first electrode wire 4 passes through the bottom of the first artificial antiferromagnetic structure 11 and the bottom of the first artificial ferromagnetic structure 21 .

[0063] The second electrode wire 5 passes through the bottom of the second artificial antiferromagnetic structure 12 and the bottom of the second artificial ferromagnetic structure 22 .

[0064] Optionally, the first electrode line 4 includes a first input end 41, a second input end 42 and a first output end 43, the first input end 41 is arranged at the head of the first electrode line 4, the second input end 42 is arranged at the first electrode line 4 between the bottom of the first artificial antiferromagnetic structure 11 and the bottom of the first artificial ferromagnetic structure 21, and the first output end 43 is arranged at the tail of the first electrode line 4.

[0065] The second electrode line 5 includes a third input end 51, a fourth input end 52 and a second output end 53. The third input end 51 is arranged at the head of the second electrode line 5, the fourth input end 52 is arranged at the second electrode line 5 between the bottom of the second artificial antiferromagnetic structure 11 and the bottom of the second artificial ferromagnetic structure 21, and the second output end 53 is arranged at the tail of the second electrode line 5.

[0066] In this embodiment, through the above arrangement, the first electrode lines 4 and the second electrode lines 5 can be controlled independently of each other.

[0067] Optionally, the applied current density ranges of the first input terminal 41, the second input terminal 42, the third input terminal 51 and the fourth input terminal 52 are all ±1.5×10 11 A / m 2To ±1.0×10 12 A / m 2 .

[0068] In this embodiment, the input current density applied to the first electrode line 4 and the second electrode line 5 can be adjusted to obtain four output states: (1, 1), (1, 0), (0, 1) and (0, 0). The applicable current density range is ±1.5×10 11 A / m 2 To ±1.0×10 12 A / m 2 , significantly reducing the applied current density and lowering power consumption.

[0069] Specifically, please refer to Figure 2 , where the current density of the first input terminal 41, the second input terminal 42, the third input terminal 51 and the fourth input terminal 52 is marked as J 12 、J 23 、J 45 and J 56 . Figure 2 The direction of the arrow is the direction of the current. In order to obtain the four output states (1,1), (1,0), (0,1) and (0,0), as shown in Figure 3 As shown in (a), the following operations can be performed: 1. First, before reading the information, apply -1.0×10 12 A / m 2 The high-density reset current will make the magnetization orientation of each input end uniformly prefabricated in the -y axis; 2. Apply ±1.5×10 11 A / m 2 The write current is used to realize the magnetization orientation arrangement in the two first ferromagnetic sublayers 13 in the artificial antiferromagnetic structure through the SOT effect, thereby guiding the magnetization response of the artificial ferromagnetic structure; 3. Finally, 10 10 A / m 2 The weak measurement current of the order of magnitude is used to detect the magnetization state of the output terminal through the anomalous Hall magnetoresistance. Figure 3 As shown in (b), in this process, magnetization in the +z-axis direction corresponds to a logic "1" (high resistance state), and magnetization in the -z-axis direction corresponds to a logic "0" (low resistance state). This shows that the spin nanodevice of the present application can obtain four output states, which can meet different needs.

[0070] Optionally, the materials of the first top ferromagnetic layer 15 , the second ferromagnetic sublayer 24 , the second top ferromagnetic layer 25 and the first bottom ferromagnetic layer 131 , and the first bridge structure 31 , the second bridge structure 32 , the third bridge structure 33 and the fourth bridge structure 34 all include Co / Pt multilayer films.

[0071] In this embodiment, the first bridge structure 31, the second bridge structure 32, the third bridge structure 33 and the fourth bridge structure 34 can be specific areas reserved when preparing the first top ferromagnetic layer 15, the second top ferromagnetic layer 25, the first bottom ferromagnetic layer 131 and the second ferromagnetic sublayer 24, so that the artificial ferromagnetic structure serves as the output end to form a magnetic circuit connection with the first ferromagnetic sublayer 13 in the two artificial antiferromagnetic structures, so that information is transmitted through the magnetic coupling between the input end and the output end.

[0072] Optionally, the materials of the first non-magnetic layer 14 and the second non-magnetic layer 23 both include ruthenium.

[0073] This application can be verified by micromagnetic simulation method, and the device model is designed in 90×90×16nm. 3 In the space of 1×1×0.4 nm, the open source OOMMF software is used to solve the Landau-Lifshitz-Gilbert dynamic equation to obtain the observation of the dynamic process of magnetization reversal of magnetic moment. The entire model is discretized into 1×1×0.4 nm 3 The mesh size is sufficient to ensure the numerical accuracy of the simulation. Based on the experimental results, the material parameters are as follows: for the first top ferromagnetic layer 15, the second ferromagnetic sublayer 24, the second top ferromagnetic layer 25 and the first bottom ferromagnetic layer 131, the saturation magnetization Ms is 1100kA / m, the Heisenberg exchange constant Aex is 16pJ / m, and in the artificial antiferromagnetic structure, the perpendicular magnetic anisotropy constant of the first top ferromagnetic layer 15 and the first bottom ferromagnetic layer 131 is set to MJ / m 3 and MJ / m 3 The perpendicular magnetic anisotropy constant of the first ferromagnetic sublayer 13 is set to 1 mJ / m 2 For the in-plane magnetic layer (the first soft ferromagnetic layer 132 and the second soft ferromagnetic layer 26), the saturation magnetization Ms is 480 kA / m, the Heisenberg exchange coefficient Aex is 16 pJ / m, and the perpendicular magnetic anisotropy constant Ku is -0.02 MJ / m. 3 In addition, the antiferromagnetic surface energy σ is -0.06mJ / m 2 , the Gilbert damping coefficient α is 0.2.

[0074] like Figure 4As shown in (a), under the influence of interlayer antiferromagnetic coupling, the perpendicular magnetization reversal fields of both ferromagnetic sublayers in the artificial antiferromagnetic structure change: the ferromagnetic layer with weaker anisotropy preferentially switches at a reversal field far below its anisotropy field. The ferromagnetic layer with stronger anisotropy, on the other hand, requires a magnetic field exceeding its anisotropy field to achieve magnetization reversal. Based on this result, a film layer with weaker perpendicular anisotropy serves as the free layer and another film layer as the pinned layer, enabling effective manipulation of the free layer at low current densities. Under the influence of an external magnetic field, this artificial antiferromagnetic multilayer exhibits three characteristic magnetization states: ↑↑ (parallel and in the same direction), ↑↓ (antiparallel), and ↓↓ (parallel and in opposite directions). By driving the magnetization reversal process with current, the system can further develop four magnetization states: ←←, ↑↓, ↓↑, and →→. Figures 4(b) and (c) show the temporal evolution of the system's overall magnetization at current densities of -1.5×1011 A / m2 and -1.0×1012 A / m2, respectively. At low drive currents, the magnetization orientation is dominated by both the anisotropy of the ferromagnetic layers and interlayer exchange coupling, resulting in a stable interlayer antiferromagnetic coupling state. However, when the drive current is significantly increased, the magnetizations of the upper and lower magnetic layers not only overcome the interlayer coupling and achieve a consistent orientation, but also deflect along the y-axis under the influence of the SOT.

[0075] In the artificial ferromagnetic structure, the magnetic layers between the second soft ferromagnetic layer 26 and the second top ferromagnetic layer and the second ferromagnetic sublayer having perpendicular anisotropy are mainly dominated by the interlayer dipole field, resulting in the interlayer magnetization orientation tending to be parallel. Figure 5 (a) is the hysteresis loop of the artificial ferromagnetic multilayer film and each ferromagnetic sublayer; Figure 5 As shown in (b), when a current of -1.5×1011A / m2 is applied, the current density has not yet reached the threshold for driving magnetization reversal, and the magnetization state of the system remains stable. Significant current-driven magnetization reversal only occurs when the SOT equivalent field is much larger than the anisotropy equivalent field, as shown in Figure 5 (c) When a high-density current of -1.0×1012 A / m2 is applied, the ferromagnetic multilayer film exhibits magnetization reversal behavior similar to that of the antiferromagnetic multilayer film. However, when the current is removed, a perpendicular magnetization reversal occurs, accompanied by a significant spin precession process.

[0076] The above description of the present invention is exemplified in conjunction with the accompanying drawings. It is obvious that the specific implementation of the present invention is not limited to the above-mentioned method. As long as such non-substantial improvements are made using the method concept and technical solution of the present invention, or the concept and technical solution of the present invention are directly applied to other occasions without improvement, they are all within the scope of protection of the present invention.

Claims

1. An ultra-low power multi-state spin nanodevice based on an artificial antiferromagnet structure, comprising an array of spin units, characterized in that: In a horizontal plane, the spin unit includes an artificial antiferromagnetic structure and an artificial ferromagnetic structure arranged diagonally, the two artificial antiferromagnetic structures and the two artificial ferromagnetic structures are interconnected, the artificial antiferromagnetic structure is an input end, and the artificial ferromagnetic structure is an output end; Along the direction perpendicular to the horizontal plane, the artificial antiferromagnetic structure includes a first ferromagnetic sublayer, a first non-magnetic layer and a first top ferromagnetic layer sequentially arranged on one side of the electrode line; the artificial ferromagnetic structure includes a second non-magnetic layer and a second ferromagnetic sublayer and a second top ferromagnetic layer sequentially arranged on one side of the electrode line.

2. The spin nanodevice according to claim 1, characterized in that The first ferromagnetic sublayer includes a first bottom ferromagnetic layer and a first soft ferromagnetic layer sequentially arranged on one side of the electrode line.

3. The spin nanodevice according to claim 2, characterized in that The artificial ferromagnetic structure further includes a second soft ferromagnetic layer arranged on a side of the second non-magnetic layer close to the electrode line.

4. The spin nanodevice according to claim 3, characterized in that The materials of the first soft ferromagnetic layer and the second soft ferromagnetic layer each independently include at least one of nickel, iron and cobalt.

5. The spin nanodevice according to claim 3, characterized in that The diagonally arranged artificial antiferromagnetic structure includes a first artificial antiferromagnetic structure and a second artificial antiferromagnetic structure, and the diagonally arranged artificial ferromagnetic structure includes a first artificial magnet structure and a second artificial ferromagnetic structure; The first top ferromagnetic layer in the first artificial antiferromagnetic structure is connected to the second top ferromagnetic layer in the first artificial ferromagnetic structure through a first bridge structure, and is connected to the second top ferromagnetic layer in the second artificial ferromagnetic structure through a second bridge structure; The first bottom ferromagnetic layer in the second artificial antiferromagnetic structure is connected to the second ferromagnetic sublayer in the first artificial ferromagnetic structure through a third bridge structure, and is connected to the second ferromagnetic sublayer in the second artificial ferromagnetic structure through a fourth bridge structure.

6. The spin nanodevice according to claim 5, characterized in that The electrode wires include a first electrode wire and a second electrode wire; The first electrode line is provided through the bottom of the first artificial antiferromagnetic structure and the bottom of the first artificial ferromagnetic structure; The second electrode line is arranged through the bottom of the second artificial antiferromagnetic structure and the bottom of the second artificial ferromagnetic structure.

7. The spin nanodevice according to claim 6, characterized in that The first electrode line includes a first input end, a second input end, and a first output end, wherein the first input end is provided at the head of the first electrode line, the second input end is provided at the first electrode line between the bottom of the first artificial antiferromagnetic structure and the bottom of the first artificial ferromagnetic structure, and the first output end is provided at the tail of the first electrode line; The second electrode line includes a third input end, a fourth input end and a second output end. The third input end is arranged at the head of the second electrode line, the fourth input end is arranged at the second electrode line between the bottom of the second artificial antiferromagnetic structure and the bottom of the second artificial ferromagnetic structure, and the second output end is arranged at the tail of the second electrode line.

8. The spin nanodevice according to claim 7, characterized in that The applied current density range of the first input terminal, the second input terminal, the third input terminal and the fourth input terminal is ±1.5×10 11 A / m 2 To ±1.0×10 12 A / m 2 .

9. The spin nanodevice according to claim 5, characterized in that The materials of the first top ferromagnetic layer, the second ferromagnetic sublayer, the second top ferromagnetic layer and the first bottom ferromagnetic layer, as well as the first bridge structure, the second bridge structure, the third bridge structure and the fourth bridge structure all include Co / Pt multilayer films.

10. The spin nanodevice according to claim 1, wherein The materials of the first non-magnetic layer and the second non-magnetic layer both include ruthenium.

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