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Anti-single-particle irradiation reinforcement circuit of CMOS integrated circuit

An anti-single particle irradiation and integrated circuit technology, applied in circuits, electrical solid devices, electrical components, etc., can solve expensive problems, achieve less circuit delay, improve the ability to resist single event flipping, and increase the layout area.

Active Publication Date: 2011-07-06
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Abstract
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  • Claims
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Problems solved by technology

However, this method is becoming more and more expensive, and radiation effect researchers tend to use circuit design to eliminate single-event pulses

Method used

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  • Anti-single-particle irradiation reinforcement circuit of CMOS integrated circuit
  • Anti-single-particle irradiation reinforcement circuit of CMOS integrated circuit
  • Anti-single-particle irradiation reinforcement circuit of CMOS integrated circuit

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Embodiment Construction

[0032] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0033] Information in circuits is stored and exchanged in the form of electric charge. If the stored and exchanged charge flips, it can cause an error in the output of the circuit. These errors become transient errors, soft errors, single event event rollovers. High-energy nuclear particles or electron sources can cause flipping. The nuclear particles that produce flipping events include cosmic rays from space and trace amounts of radioactive atomic decay on Earth. Nuclear particles in the atmosphere include alpha particles, protons and neutrons. Sources of electrons include power supply noise, electromagnetic interference, and optical radiation. Due to the high memory density and the large amount of stored informatio...

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Abstract

The invention discloses an anti-single-particle irradiation reinforcement circuit of a CMOS (Complementary Metal-Oxide-Semiconductor) integrated circuit, which comprises a logic gating circuit (100) which is subjected to SEU (single event upset) easily and a redundancy logic gating circuit (101), wherein the logic gating circuit (100) and the redundancy logic gating circuit (101) share one input end, a first diode (102) and a second diode (103) are connected between the output end of the logic gating circuit (100) and the output end of the redundancy logic gating circuit (101), and the conducting directions of the first diode (102) and the second diode (103) are opposite. The anti-single-particle irradiation reinforcement circuit of the CMOS integrated circuit conducts anti- irradiation reinforcement on the sensitive logic gating circuit in the CMOS integrated circuit, strikes an average between the area and speed of the integrated circuit, and obviously improves the anti-SEU level of the CMOS integrated circuit.

Description

technical field [0001] The invention relates to the technical field of transient irradiation of CMOS circuits in anti-radiation hardened microelectronics and solid electronics, in particular to a CMOS integrated circuit anti-single event irradiation hardened circuit. Background technique [0002] There are two ways for ionizing radiation to generate charges in semiconductor devices, one is direct ionizing radiation, and the other is indirect ionizing radiation. Both mechanisms will cause integrated circuits to fail. in: [0003] For direct ionizing radiation, charges are generated by the direct ionization of incident particles. When energetic charged particles pass through a semiconductor material, energy is lost and ionized along the incident path to generate electron-hole pairs. The path that an incident particle travels through the semiconductor material after losing all of its energy is called the range. LET represents the energy lost on the unit path in the particle ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/552
Inventor 毕津顺海潮和韩郑生罗家俊
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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