188 results about "Hamming code" patented technology

Decoding that uses an extended Hamming code in one of the primary stages of static encoding uses a calculation of the r+1 Hamming redundant symbols for k input symbols from which Hamming redundant symbols are calculated, where r satisfies 2r−1−r≦k<2r−r−1. This efficient method requires on the order of 2k+3r+1 XORs of input symbols to calculate the r+1 Hamming redundant symbols.

A Forward Error Correction (FEC) code compatible with the self-synchronized scrambler used by the 64B / 66B encoding standard for transmission on Serializer / Deserializer (SerDes) communications channel links. The FEC code allows encoding and decoding to occur before and after scrambling, respectively, so as to preserve the properties of the scrambling operation on the transmitted signal. The code allows the correction of any single transmission error in spite of the multiplication by three of all transmission errors due to the 64B / 66B scrambling process. A Hamming code is combined with a Bit Interleaved Parity code of degree n (BIP-n). These two codes provide for protection both for an error anywhere in the maximum length of the packet as well as for an error replicated two or three times by the descrambling process. All single bit errors, whether multiplied or not, have unique syndromes and are therefore easily correctable. In addition, the packet can be transported across multiple serial links for higher bandwidth applications without a degradation of the code efficiency. The Hamming code can be generated from any irreducible polynomial, such as H(x)=x10+x3+1. The BIP code is chosen to be of degree 6 to fit with 64B / 66B scrambling polynomial and is represented by B(x)=x6+1.

A semiconductor storage device, a method of controlling the same, and an error correction system allow reduction in power consumption and circuit scale without detriment to error correction capability. An error correction code (ECC) circuit of a solid state drive (SSD) performs first error correction on read data using a first error correction code (Hamming code), and further performs second error correction on the result of the first error correction using a second error correction code (BHC code). Furthermore, the ECC circuit performs third error correction on the result of the second error correction using a third error correction code (RS code).

Basic redundancy information is non-volatily stored in a reserved area of an addressable area of a memory array, and is copied to volatile storage therein at every power-on of the memory device. The unpredictable though statistically inevitable presence of failed array elements in such a reserved area of the memory array corrupts the basic redundancy information established during the test-on wafer (EWS) phase of the fabrication process. This increases the number of rejects, and lowers the yield of the fabrication process. This problem is addressed by writing the basic redundancy data in the reserved area of the array with an ECC technique using a certain error correction code. The error correction code may be chosen among majority codes 3, 5, 7, 15 and the like, or the Hamming code for 1, 2, 3 or more errors, as a function of the fail probability of a memory cell as determined by the EWS phase during fabrication.