Hamming code based method for carrying out fault tolerance on static RAM multiple bit upset

A static random, multi-bit flip technology, applied in static memory, instruments, etc., can solve problems such as system delay, double-bit error, reduce system speed, etc., to avoid refresh or self-update, and improve speed.

Inactive Publication Date: 2012-03-21
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
View PDF4 Cites 16 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the problem with the Hamming code is that it can only realize the detection and correction of single-bit errors in one byte and the detection of double-bit errors. For double-bit and multiple-bit errors, the error cannot be corrected. The system is refreshed or built-in. Update measures to correct multiple bit errors in the
If the method of system refresh or self-update is adopted every time, it will bring a great delay to the system, occupy the timing resources of the system, and reduce the system speed

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Hamming code based method for carrying out fault tolerance on static RAM multiple bit upset
  • Hamming code based method for carrying out fault tolerance on static RAM multiple bit upset
  • Hamming code based method for carrying out fault tolerance on static RAM multiple bit upset

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0022] The invention provides a fault-tolerant method based on Hamming codes for multi-bit flipping of static random access memory. The method first uses Hamming codes on the SRAM to encode and decode, and then uses two identical SRAMs with Hamming codes to implement parallel input and output. , and a dual-mode output selection circuit is connected to the output ends of the two SRAMs.

[0023] On the SRAM, the Hamming code is used for encoding and decoding to resist the single-bit flip caused by high-energy particles. Due to the cumulative effect of bit flips caused by high-energy particles, if the method of system refresh or self-refresh is adopted every time, it will bring a large delay to the system. In order to solve...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a Hamming code based method for carrying out fault tolerance on static RAM (random-access memory) multiple bit upset. The method comprises the following steps: carrying out coding and decoding on the static RAM by employing Hamming code; employing two identical static RAMs with Hamming code coding and decoding to realize parallel input and output; and connecting a dual mode output selection circuit on output terminals of the two static RAMs. The invention has certain tolerance on SRAM multiple bit upset caused by high energy particles; and as no refresh or update is required, a system speed is increased substantially.

Description

technical field [0001] The invention relates to the field of static random access memory (SRAM) fault-tolerant technology, in particular to a method for fault-tolerant SRAM multi-bit flipping based on Hamming codes. Background technique [0002] Static random access memory (SRAM) is an important part of spacecraft electronics system. The study of SRAM affected by space high-energy particles is the basis for fully understanding the mechanism of particle effects and conducting research on other types of devices. By studying the particle effect of SRAM, it provides an important reference for the operating life evaluation and reinforcement design of the spacecraft electronics system. [0003] The core part of SRAM is a memory cell array, which often stores data or instructions. Due to the impact of high-energy particles in space, the contents of the storage unit will be reversed, resulting in errors in the data or instructions output by the SRAM, causing the system to collect w...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G11C29/52
Inventor 杨献王雷刘海南蒋见花黑勇周玉梅
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products